WO2012130070A1 - Solar battery and method of manufacturing the same - Google Patents

Solar battery and method of manufacturing the same Download PDF

Info

Publication number
WO2012130070A1
WO2012130070A1 PCT/CN2012/072722 CN2012072722W WO2012130070A1 WO 2012130070 A1 WO2012130070 A1 WO 2012130070A1 CN 2012072722 W CN2012072722 W CN 2012072722W WO 2012130070 A1 WO2012130070 A1 WO 2012130070A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light absorption
absorption layer
cdte
electrode area
Prior art date
Application number
PCT/CN2012/072722
Other languages
French (fr)
Inventor
Rui DENG
Original Assignee
Shenzhen Byd Auto R&D Company Limited
Byd Company Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Byd Auto R&D Company Limited, Byd Company Limited filed Critical Shenzhen Byd Auto R&D Company Limited
Publication of WO2012130070A1 publication Critical patent/WO2012130070A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of solar battery, more particularly to a CdTe solar battery and a method of manufacturing the same.
  • CdTe is a compound semiconductor with a bandgap most suitable for photoelectric energy conversion. Solar batteries made from this semiconductor may directly convert solar energy into electric energy with a high theoretical conversion efficiency (for example, 27% at room temperature). Moreover, CdTe may be easily deposited at a high deposition rate to form a large area film. Furthermore, compared with a silicon solar battery, the manufacturing cost of the CdTe solar battery may be reduced, and therefore the CdTe solar battery may be a new solar battery with wide applicability.
  • a conventional CdTe solar battery may have a lamination structure including a glass substrate G, a transparent conductive film T, a CdS layer N, a CdTe layer P, a transition layer DE, and a back electrode layer M laminated sequentially.
  • the effective light reaching the CdTe layer is low because of the absorption by the glass substrate G and the transparent conductive film T. Therefore, the photoelectric conversion efficiency of the conventional CdTe solar battery is low.
  • a CdTe solar battery with a new structure may need to be provided, which may have a high photoelectric conversion efficiency and low cost and may be manufactured on a large scale with a simple process.
  • a CdTe solar battery may be provided.
  • the CdTe solar battery may comprise: a glass substrate; a light absorption layer formed on the glass substrate; and a first electrode area and a second electrode area formed on the light absorption layer respectively, in which the first electrode area includes a corroded light absorption layer, a back contact transition layer, and a positive layer laminated sequentially; the second electrode area includes a N-type layer and a negative layer laminated sequentially; the corroded light absorption layer is formed on the light absorption layer; the N-type layer is formed on the light absorption layer; and the first electrode area and the second electrode area are insulated from each other.
  • the light absorption layer has an upper surface and a lower surface, in which the lower surface of the light absorption layer is contacted with the glass substrate, the upper surface of the light absorption layer is opposite to the lower surface of the light absorption layer, and the corroded light absorption layer in the first electrode area and the N-type layer in the second electrode area are contacted with the upper surface of the light absorption layer respectively.
  • a method of manufacturing a CdTe solar battery may be provided.
  • the method may comprise the steps of:
  • the first electrode area includes a corroded light absorption layer, a back contact transition layer, and a positive layer laminated sequentially;
  • the second electrode area includes a N-type layer and a negative layer laminated sequentially;
  • the corroded light absorption layer is formed on the light absorption layer;
  • the N-type layer is formed on the light absorption layer; and
  • the first electrode area and the second electrode area are insulated from each other.
  • washing the glass substrate further includes the steps of: a1 ) ultrasonic washing the glass substrate with acetone, a cleaning reagent, and deionized water sequentially;
  • the step (b) further includes vacuum coating a CdTe film on the glass substrate.
  • step (c) further includes the steps of:
  • the thickness of the CdTe film is about 2 ⁇ to about 5 ⁇ ; the thickness of the CdS film is about 50nm to about 300nm; the thickness of the corroded light absorption layer is about 0.1 m to about 1 ⁇ ; the thickness of the ZnTe/(ZnTe:Cu) composite layer is about 10nm to 100nm; and the thickness of the metal electrode layer is about 50nm to about 300nm.
  • the conventional CdTe solar battery is improved, the light absorption layer is formed on the light receiving surface of the battery and contacted with the glass substrate directly to directly receive light transmitted through the glass substrate; and the first electrode area to generate the positive current and lead the positive current out and the second electrode area to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively.
  • the light absorption layer is directly exposed to sunlight, thus avoiding absorption of light by the transparent conductive film, improving the utilization rate of light, omitting the transparent conductive film in the conventional CdTe solar battery, simplifying the process flow, reducing the manufacturing cost, increasing the photoelectric conversion efficiency of the CdTe solar battery, and facilitating large scale production.
  • Fig. 1 is a schematic cross-sectional view of a conventional CdTe solar battery
  • Fig. 2 is a schematic cross-sectional view of a CdTe solar battery according to an embodiment of the present disclosure.
  • a CdTe solar battery according to an embodiment of the present disclosure comprises: a glass substrate G; a light absorption layer P formed on the glass substrate G; and a first electrode area B1 and a second electrode area B2 formed on the light absorption layer P respectively.
  • the first electrode area B1 includes a corroded light absorption layer D, a back contact transition layer E, and a positive layer M1 laminated sequentially;
  • the second electrode area B2 includes a N-type layer N and a negative layer M2 laminated sequentially;
  • the corroded light absorption layer D is formed on the light absorption layer P;
  • the N-type layer N is formed on the light absorption layer P; and
  • the first electrode area B1 and the second electrode area B2 are insulated from each other.
  • the light absorption layer P has an upper surface and a lower surface, in which the lower surface of the light absorption layer P is contacted with the glass substrate G, the upper surface of the light absorption layer P is opposite to the lower surface of the light absorption layer P, and the corroded light absorption layer D in the first electrode area B1 and the N-type layer N in the second electrode area B2 are contacted with the upper surface of the light absorption layer P respectively.
  • the first electrode area B1 and the second electrode area B2 are formed on the upper surface of the light absorption layer P respectively; the corroded light absorption layer D is formed on the upper surface of the light absorption layer P; and the N-type layer N is formed on the upper surface of the light absorption layer P.
  • the glass substrate G may be used as a support for the light absorption layer P.
  • the glass substrate G may be a substrate of common glass, ultra clear glass, or other high temperature resistant and transparent materials, which has a thickness of about 1 mm to about 5mm.
  • the glass substrate G may be commercially available.
  • the light absorption layer P is a P-type brownish black CdTe film with a thickness of about 2 ⁇ to about 5 ⁇ .
  • the light absorption layer P may be formed by techniques of close-spaced sublimation (CSS), vapor transportation deposition (VTD), screen printing, etc.
  • the N-type layer N is a light yellow N-type CdS film with a thickness of about 50nm to about 300nm.
  • the N-type layer N may be formed by techniques of chemical bath deposition (CBD), vacuum deposition, etc.
  • the corroded light absorption layer D is a corroded CdTe layer with a thickness of about 0.1 ⁇ to about 1 ⁇ .
  • the corroded light absorption layer D may be formed by corroding a part of the upper surface of the light absorption layer P using a chemical solution. That is, the corroded light absorption layer D is formed by directly corroding a part of the light absorption layer P using the chemical solution.
  • the chemical solution may include at least one selected from the group comprising HNO3-H 3 PO 4 (NP) solution, Br 2 -methanol mixture, and K2Cr 2 O7 H 2 SO 4 solution.
  • the corroded CdTe layer is immersed in the chemical solution for a certain period of time to form a rich Te area, which may enhance the ohmic contact with the positive layer M1 .
  • the back contact transition layer E may be mainly used for enhancing ohmic contact.
  • the back contact transition layer E is a composite layer of ZnTe and Cu-doped ZnTe with a thickness of about 10nm to about 100nm.
  • the back contact transition layer E may be formed by vacuum evaporation or vacuum sputtering.
  • the positive layer M1 and the negative layer M2 are each a layer of a metal having high conductivity with a thickness of about 50nm to about 300nm; and the metal is at least one selected from the group comprising Mo, Ni, Cu, and Ag.
  • the positive layer M1 and the negative layer M2 may be separately formed by vacuum sputtering.
  • a metal electrode layer is formed by vacuum sputtering, and then cut by laser to form the insulating positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N.
  • the positive layer M1 and the negative layer M2 are insulated from each other.
  • the current is leaded out by the transparent conductive film T which is a front electrode (i.e., a negative electrode) and the back electrode layer M which is a back electrode (i.e., a positive electrode).
  • the positive layer M1 and the negative layer M2 are used as a positive electrode to lead the positive current out and a negative electrode to lead the negative current out respectively, and instead of the transparent conductive film T in the conventional CdTe solar battery, the negative layer M2 on the N-type layer N is used as the negative electrode of the solar battery.
  • the conventional CdTe solar battery is improved, the light absorption layer P is formed on the light receiving surface of the battery and contacted with the glass substrate G directly to directly receive light transmitted through the glass substrate G; and the first electrode area B1 to generate the positive current and lead the positive current out and the second electrode area B2 to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively.
  • the light absorption layer P is directly exposed to sunlight, thus avoiding absorption of light by the transparent conductive film T, improving the utilization rate of light, omitting the transparent conductive film T in the conventional CdTe solar battery, simplifying the process flow, reducing the manufacturing cost, increasing the photoelectric conversion efficiency of the CdTe solar battery, and facilitating large scale production.
  • a method of manufacturing a CdTe solar battery comprises the steps of:
  • the first electrode area B1 includes a corroded light absorption layer D, a back contact transition layer E, and a positive layer M1 laminated sequentially;
  • the second electrode area B2 includes a N-type layer N and a negative layer M2 laminated sequentially;
  • the corroded light absorption layer D is formed on the light absorption layer P;
  • the N-type layer N is formed on the light absorption layer P; and
  • the first electrode area B1 and the second electrode area B2 are insulated from each other.
  • washing the glass substrate G may include the steps of:
  • the step (b) further includes vacuum coating a CdTe film on the glass substrate G.
  • the step (c) may further include the steps of:
  • N-type layer N covering a first part of the surface of the CdTe film and then coating a CdS film onto a second part of the surface of the CdTe film to form the
  • c2) forming the corroded light absorption layer D covering the CdS film formed on the second part of the surface of the CdTe film, corroding the first part of the surface of the CdTe film using a chemical solution, and then washing and drying to form the corroded light absorption layer D;
  • a method of preparing a CdTe solar battery comprises the steps of: 1 ) providing and washing a glass substrate G: using common glass as the substrate; ultrasonic washing the glass substrate G with acetone to remove oil and fat on the surface of the glass substrate G; ultrasonic washing the glass substrate G with a cleaning reagent to remove inorganic contaminants on the surface of the glass substrate G; ultrasonic washing the glass substrate G with deionized water to remove impurities on the surface of the glass substrate G; drying the glass substrate G; and placing the glass substrate G into a pretreatment room for plasma cleaning;
  • N-type layer N covering a half of the surface of the CdTe film; placing the glass substrate G into a CdS coating device, in which the sublimation source is high pure CdS powder; and then vacuumizing the CdS coating device, introducing a gas into the CdS coating device, and coating a CdS film onto the uncovered surface of the CdTe film to form the N-type layer N contacted with the upper surface of the light absorption layer P;
  • corroded light absorption layer D covering the CdS film formed in the step 3); corroding the uncovered surface of the CdTe film using a chemical solution, and then washing and drying to form the corroded light absorption layer D;
  • forming the back contact transition layer E placing the semi finished product obtained in the step 4) into a vacuum sputtering device; and using a radio frequency power source, using ZnTe as a target material for sputtering at a power, and using ZnTe:Cu as a target material for sputtering after changing the power to form a ZnTe/(ZnTe:Cu) composite layer, i.e., the back contact transition layer E, onto the surface of the corroded light absorption layer D; and
  • forming the positive layer M1 and the negative layer M2 placing the semi finished product obtained in the step 5) into a vacuum sputtering device; using Mo as a target material for sputtering to form a metal electrode layer onto the N-type layer N and the back contact transition layer E, and then laser cutting the metal electrode layer to form the positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N, in which the positive layer M1 and the negative layer M2 are insulated from each other. Therefore, the CdTe solar battery is manufactured.
  • the first electrode area B1 includes the corroded light absorption layer D, the back contact transition layer E, and the positive layer M1 laminated sequentially; and the second electrode area B2 includes the N-type layer N and the negative layer M2 laminated sequentially.
  • a CdTe solar battery is manufactured by:
  • a glass substrate G using common glass with a thickness of 2.2 mm as the substrate; ultrasonic washing the glass substrate G with acetone for 10 min to remove oil and fat on the surface of the glass substrate G; ultrasonic washing the glass substrate G with a cleaning reagent for 10 min to remove inorganic contaminants on the surface of the glass substrate G; ultrasonic washing the glass substrate G with deionized water for 10 min to remove impurities on the surface of the glass substrate G; drying the glass substrate G; and placing the glass substrate G into a pretreatment room for plasma cleaning;
  • N-type layer N covering a half of the surface of the CdTe film; placing the glass substrate G into a CdS coating device, in which the sublimation source was high pure CdS powder; introducing an Ar O2 gas with a volume ratio of 1 :1 into the CdS coating device after the CdS coating device was vacuumized until the pressure was about 1 ⁇ 10 "3 Pa, in which the flow of the Ar O2 gas was about 10ml/min, the temperature of the sublimation source was about 550° C, and the temperature of the substrate was about 500 ° C; coating a CdS film for 6 s to form the N-type layer N with a thickness of about 120nm onto the uncovered surface of the CdTe film;
  • a corroded light absorption layer D covering the CdS film formed in the step 3); corroding the uncovered surface of the CdTe film using NP solution at room temperature for 1 min, in which the volume ratio of HNO3:H 3 PO 4 :H 2 O was 1 :70:29, and then washing and drying the glass substrate G to form the corroded light absorption layer D with a thickness of about 0.6 ⁇ ;
  • a back contact transition layer E placing the semi finished product obtained in the step 4) into a vacuum sputtering device; and using a frequency radio power source, using ZnTe as a target material for sputtering at a power of about 600W for about 10min, and then using ZnTe:Cu as a target material for sputtering at a power of about 300W for about 3min to form a ZnTe/(ZnTe:Cu) composite layer, i.e., the back contact transition layer E, with a thickness of about 50nm onto the surface of the corroded light absorption layer D; and
  • a positive layer M1 and a negative layer M2 placing the semi finished product obtained in the step 5) into a vacuum sputtering device; using a direct-current power source, using Mo as a target material for sputtering at a power of 300W for 10 min to form a Mo electrode layer with a thickness of about 150nm onto the N-type layer N and the back contact transition layer E, and then laser cutting the Mo electrode layer to form the positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N, in which the positive layer M1 and the negative layer M2 were insulated from each other. Therefore, the CdTe solar battery was manufactured.
  • the first electrode area B1 includes the corroded light absorption layer D, the back contact transition layer E, and the positive layer M1 laminated sequentially; and the second electrode area B2 includes the N-type layer N and the negative layer M2 laminated sequentially.
  • This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the glass substrate G is about 3.2mm.
  • This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the light absorption layer P is about 2 ⁇ .
  • This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the N-type layer N is about 50nm.
  • Embodiment 5 This embodiment is substantially the same as Embodiment 1 , except that: the thickness of each of the positive layer M1 and the negative layer M2 is about 300nm.
  • This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the corroded light absorption layer D is about 2 ⁇ .
  • This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the back contact transition layer E is about 10nm.
  • the CdTe solar battery comprises a lamination structure including a glass substrate G, a transparent conductive film T, a CdS layer N, a CdTe layer P, a transition layer DE, and a back electrode layer M laminated sequentially;
  • the glass substrate G was a substrate of ultra clear glass with a thickness of 2.2mm and was pretreated;
  • the transparent conductive film T was FTO conductive glass with a thickness of ⁇ . ⁇ formed by sputtering;
  • the glass substrate G was placed in a CdS coating device to coat the CdS layer N with a thickness of 120nm on the surface of the transparent conductive film T;
  • the glass substrate G was placed in a CdTe coating device to coat the CdTe layer P with a thickness of 3 ⁇ on the surface of the CdS layer N;
  • the surface of the CdTe layer P was corroded, and a ZnTe layer with a thickness of 30nm and a ZnT
  • the CdTe solar batteries obtained according to Embodiments 1 to 7 may have higher open circuit voltage, higher short circuit current, and higher photoelectrical conversion efficiency.
  • the light absorption layer P is formed on the light receiving surface of the battery and contacted with the glass substrate G directly to directly receive light transmitted through the glass substrate G; and the first electrode area B1 to generate the positive current and lead the positive current out and the second electrode area B2 to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively, thus largely increasing the photoelectric conversion efficiency of the CdTe solar battery.

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A CdTe solar battery and a method of manufacturing the same are provided. The Cd Te solar battery comprises: a glass substrate (G); a light absorption layer (P) formed on the glass substrate (G); and a first electrode area (B1) and a second electrode area (B2) formed on the light absorption layer (P) respectively, in which the first electrode area (B1) includes a corroded light absorption layer (D), a back contact transition layer (E), and a positive layer (M1) laminated sequentially; the second electrode area (B2) includes a N-type layer (N) and a negative layer (M2) laminated sequentially; the corroded light absorption layer (D) is formed on the light absorption layer (P); the N-type layer (N) is formed on the light absorption layer (P); and the first electrode area (B1) and the second electrode area (B2) are insulated from each other.

Description

SOLAR BATTERY AND METHOD OF MANUFACTURING THE SAME
CROSS-REFERENCE TO RELATED APPLICATION
The present application claims priority to and benefits of Chinese Patent Application No.201 1 10076750.3, filed with the State Intellectual Property Office of the People's Republic of China (SIPO) on Mar. 29, 201 1 , the entire content of which is incorporated herein by reference.
FIELD
The present disclosure relates to the field of solar battery, more particularly to a CdTe solar battery and a method of manufacturing the same.
BACKGROUND
The statements in this section merely provide background information related to the present disclosure and may or may not constitute prior art.
CdTe is a compound semiconductor with a bandgap most suitable for photoelectric energy conversion. Solar batteries made from this semiconductor may directly convert solar energy into electric energy with a high theoretical conversion efficiency (for example, 27% at room temperature). Moreover, CdTe may be easily deposited at a high deposition rate to form a large area film. Furthermore, compared with a silicon solar battery, the manufacturing cost of the CdTe solar battery may be reduced, and therefore the CdTe solar battery may be a new solar battery with wide applicability.
As shown in Fig. 1 , a conventional CdTe solar battery may have a lamination structure including a glass substrate G, a transparent conductive film T, a CdS layer N, a CdTe layer P, a transition layer DE, and a back electrode layer M laminated sequentially. The effective light reaching the CdTe layer is low because of the absorption by the glass substrate G and the transparent conductive film T. Therefore, the photoelectric conversion efficiency of the conventional CdTe solar battery is low.
SUMMARY
l In viewing thereof, the present disclosure is directed to solve at least one of the problems existing in the prior art. Therefore, a CdTe solar battery with a new structure may need to be provided, which may have a high photoelectric conversion efficiency and low cost and may be manufactured on a large scale with a simple process.
According to an embodiment of the present disclosure, a CdTe solar battery may be provided. The CdTe solar battery may comprise: a glass substrate; a light absorption layer formed on the glass substrate; and a first electrode area and a second electrode area formed on the light absorption layer respectively, in which the first electrode area includes a corroded light absorption layer, a back contact transition layer, and a positive layer laminated sequentially; the second electrode area includes a N-type layer and a negative layer laminated sequentially; the corroded light absorption layer is formed on the light absorption layer; the N-type layer is formed on the light absorption layer; and the first electrode area and the second electrode area are insulated from each other.
The light absorption layer has an upper surface and a lower surface, in which the lower surface of the light absorption layer is contacted with the glass substrate, the upper surface of the light absorption layer is opposite to the lower surface of the light absorption layer, and the corroded light absorption layer in the first electrode area and the N-type layer in the second electrode area are contacted with the upper surface of the light absorption layer respectively.
According to another embodiment of the present disclosure, a method of manufacturing a CdTe solar battery may be provided. The method may comprise the steps of:
(a) providing and washing a glass substrate;
(b) coating a light absorption layer on the glass substrate; and
(c) forming a first electrode area and a second electrode area on the light absorption layer respectively,
in which the first electrode area includes a corroded light absorption layer, a back contact transition layer, and a positive layer laminated sequentially; the second electrode area includes a N-type layer and a negative layer laminated sequentially; the corroded light absorption layer is formed on the light absorption layer; the N-type layer is formed on the light absorption layer; and the first electrode area and the second electrode area are insulated from each other.
In some embodiments, in the step (a), washing the glass substrate further includes the steps of: a1 ) ultrasonic washing the glass substrate with acetone, a cleaning reagent, and deionized water sequentially;
a2) drying the glass substrate; and
a3) plasma cleaning the glass substrate.
In some embodiments, the step (b) further includes vacuum coating a CdTe film on the glass substrate.
In some embodiments, the step (c) further includes the steps of:
c1 ) covering a first part of the surface of the CdTe film and then coating a CdS film onto a second part of the surface of the CdTe film to form the N-type layer;
c2) covering the CdS film formed on the second part of the surface of the CdTe film, corroding the first part of the surface of the CdTe film using a chemical solution, and then washing and drying the glass substrate to form the corroded light absorption layer;
c3) vacuum sputtering a ZnTe/(ZnTe:Cu) composite layer onto the surface of the corroded light absorption layer to form the back contact transition layer; and
c4) vacuum sputtering a metal electrode layer onto the N-type layer and the back contact transition layer, and then laser cutting the metal electrode layer to form the positive layer on the back contact transition layer and form the negative layer on the N-type layer, in which the positive layer and the negative layer are insulated from each other.
In some embodiments, the thickness of the CdTe film is about 2μηη to about 5μηη; the thickness of the CdS film is about 50nm to about 300nm; the thickness of the corroded light absorption layer is about 0.1 m to about 1 μηη; the thickness of the ZnTe/(ZnTe:Cu) composite layer is about 10nm to 100nm; and the thickness of the metal electrode layer is about 50nm to about 300nm.
With the CdTe solar battery according to an embodiment of the present disclosure, the conventional CdTe solar battery is improved, the light absorption layer is formed on the light receiving surface of the battery and contacted with the glass substrate directly to directly receive light transmitted through the glass substrate; and the first electrode area to generate the positive current and lead the positive current out and the second electrode area to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively. Therefore, the light absorption layer is directly exposed to sunlight, thus avoiding absorption of light by the transparent conductive film, improving the utilization rate of light, omitting the transparent conductive film in the conventional CdTe solar battery, simplifying the process flow, reducing the manufacturing cost, increasing the photoelectric conversion efficiency of the CdTe solar battery, and facilitating large scale production.
Additional aspects and advantages of the embodiments of the present disclosure will be given in part in the following descriptions, become apparent in part from the following descriptions, or be learned from the practice of the embodiments of the present disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other aspects and advantages of the disclosure will become apparent and more readily appreciated from the following descriptions taken in conjunction with the drawings in which:
Fig. 1 is a schematic cross-sectional view of a conventional CdTe solar battery; and Fig. 2 is a schematic cross-sectional view of a CdTe solar battery according to an embodiment of the present disclosure.
DETAILED DESCRIPTION
It will be appreciated by those of ordinary skill in the art that the disclosure may be embodied in other specific forms without departing from the spirit or essential character thereof. The presently disclosed embodiments are therefore considered in all respects to be illustrative and not restrictive. The same or similar elements and the elements having same or similar functions are denoted by like reference numerals throughout the descriptions.
As shown in Fig. 2, a CdTe solar battery according to an embodiment of the present disclosure comprises: a glass substrate G; a light absorption layer P formed on the glass substrate G; and a first electrode area B1 and a second electrode area B2 formed on the light absorption layer P respectively. The first electrode area B1 includes a corroded light absorption layer D, a back contact transition layer E, and a positive layer M1 laminated sequentially; the second electrode area B2 includes a N-type layer N and a negative layer M2 laminated sequentially; the corroded light absorption layer D is formed on the light absorption layer P; the N-type layer N is formed on the light absorption layer P; and the first electrode area B1 and the second electrode area B2 are insulated from each other. The light absorption layer P has an upper surface and a lower surface, in which the lower surface of the light absorption layer P is contacted with the glass substrate G, the upper surface of the light absorption layer P is opposite to the lower surface of the light absorption layer P, and the corroded light absorption layer D in the first electrode area B1 and the N-type layer N in the second electrode area B2 are contacted with the upper surface of the light absorption layer P respectively. In one embodiment, the first electrode area B1 and the second electrode area B2 are formed on the upper surface of the light absorption layer P respectively; the corroded light absorption layer D is formed on the upper surface of the light absorption layer P; and the N-type layer N is formed on the upper surface of the light absorption layer P.
The glass substrate G may be used as a support for the light absorption layer P. In some embodiments, the glass substrate G may be a substrate of common glass, ultra clear glass, or other high temperature resistant and transparent materials, which has a thickness of about 1 mm to about 5mm. The glass substrate G may be commercially available.
In some embodiments, the light absorption layer P is a P-type brownish black CdTe film with a thickness of about 2μηη to about 5μηη. The light absorption layer P may be formed by techniques of close-spaced sublimation (CSS), vapor transportation deposition (VTD), screen printing, etc.
In some embodiments, the N-type layer N is a light yellow N-type CdS film with a thickness of about 50nm to about 300nm. The N-type layer N may be formed by techniques of chemical bath deposition (CBD), vacuum deposition, etc.
In some embodiments, the corroded light absorption layer D is a corroded CdTe layer with a thickness of about 0.1 μιτι to about 1 μιτι. The corroded light absorption layer D may be formed by corroding a part of the upper surface of the light absorption layer P using a chemical solution. That is, the corroded light absorption layer D is formed by directly corroding a part of the light absorption layer P using the chemical solution. The chemical solution may include at least one selected from the group comprising HNO3-H3PO4 (NP) solution, Br2-methanol mixture, and K2Cr2O7 H2SO4 solution. The corroded CdTe layer is immersed in the chemical solution for a certain period of time to form a rich Te area, which may enhance the ohmic contact with the positive layer M1 .
The back contact transition layer E may be mainly used for enhancing ohmic contact. In some embodiments, the back contact transition layer E is a composite layer of ZnTe and Cu-doped ZnTe with a thickness of about 10nm to about 100nm. The back contact transition layer E may be formed by vacuum evaporation or vacuum sputtering. In some embodiments, the positive layer M1 and the negative layer M2 are each a layer of a metal having high conductivity with a thickness of about 50nm to about 300nm; and the metal is at least one selected from the group comprising Mo, Ni, Cu, and Ag. In one embodiment, the positive layer M1 and the negative layer M2 may be separately formed by vacuum sputtering. In another embodiment, a metal electrode layer is formed by vacuum sputtering, and then cut by laser to form the insulating positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N. The positive layer M1 and the negative layer M2 are insulated from each other.
In the conventional CdTe solar battery, as shown in Fig .1 , the current is leaded out by the transparent conductive film T which is a front electrode (i.e., a negative electrode) and the back electrode layer M which is a back electrode (i.e., a positive electrode). In the CdTe solar battery according to an embodiment of the present disclosure, the positive layer M1 and the negative layer M2 are used as a positive electrode to lead the positive current out and a negative electrode to lead the negative current out respectively, and instead of the transparent conductive film T in the conventional CdTe solar battery, the negative layer M2 on the N-type layer N is used as the negative electrode of the solar battery.
With the CdTe solar battery according to an embodiment of the present disclosure, the conventional CdTe solar battery is improved, the light absorption layer P is formed on the light receiving surface of the battery and contacted with the glass substrate G directly to directly receive light transmitted through the glass substrate G; and the first electrode area B1 to generate the positive current and lead the positive current out and the second electrode area B2 to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively. Therefore, the light absorption layer P is directly exposed to sunlight, thus avoiding absorption of light by the transparent conductive film T, improving the utilization rate of light, omitting the transparent conductive film T in the conventional CdTe solar battery, simplifying the process flow, reducing the manufacturing cost, increasing the photoelectric conversion efficiency of the CdTe solar battery, and facilitating large scale production.
According to an embodiment of the present disclosure, a method of manufacturing a CdTe solar battery comprises the steps of:
(a) providing and washing a glass substrate G;
(b) coating a light absorption layer P on the glass substrate G; and (c) forming a first electrode area B1 and a second electrode area B2 on the light absorption layer P respectively.
The first electrode area B1 includes a corroded light absorption layer D, a back contact transition layer E, and a positive layer M1 laminated sequentially; the second electrode area B2 includes a N-type layer N and a negative layer M2 laminated sequentially; the corroded light absorption layer D is formed on the light absorption layer P; the N-type layer N is formed on the light absorption layer P; and the first electrode area B1 and the second electrode area B2 are insulated from each other.
In some embodiments, in the step (a), washing the glass substrate G may include the steps of:
a1 ) ultrasonic washing the glass substrate G with acetone, a cleaning reagent, and deionized water sequentially;
a2) drying the glass substrate G; and
a3) plasma cleaning the glass substrate G.
In some embodiments, the step (b) further includes vacuum coating a CdTe film on the glass substrate G.
In some embodiments, the step (c) may further include the steps of:
c1 ) forming the N-type layer N: covering a first part of the surface of the CdTe film and then coating a CdS film onto a second part of the surface of the CdTe film to form the
N-type layer N;
c2) forming the corroded light absorption layer D: covering the CdS film formed on the second part of the surface of the CdTe film, corroding the first part of the surface of the CdTe film using a chemical solution, and then washing and drying to form the corroded light absorption layer D;
c3) forming the back contact transition layer E: vacuum sputtering a ZnTe/(ZnTe:Cu) composite layer onto the surface of the corroded light absorption layer D to form the back contact transition layer E; and
c4) forming the positive layer M1 and the negative layer M2: vacuum sputtering a metal electrode layer onto the N-type layer N and the back contact transition layer E, and then laser cutting the metal electrode layer to form the positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N, in which the positive layer M1 and the negative layer M2 are insulated from each other.
In another embodiment, a method of preparing a CdTe solar battery comprises the steps of: 1 ) providing and washing a glass substrate G: using common glass as the substrate; ultrasonic washing the glass substrate G with acetone to remove oil and fat on the surface of the glass substrate G; ultrasonic washing the glass substrate G with a cleaning reagent to remove inorganic contaminants on the surface of the glass substrate G; ultrasonic washing the glass substrate G with deionized water to remove impurities on the surface of the glass substrate G; drying the glass substrate G; and placing the glass substrate G into a pretreatment room for plasma cleaning;
2) forming the light absorption layer P: placing the glass substrate G onto a work rest of a vacuum coating device; vacuum coating a CdTe film on the glass substrate G to form the light absorption layer P;
3) forming the N-type layer N: covering a half of the surface of the CdTe film; placing the glass substrate G into a CdS coating device, in which the sublimation source is high pure CdS powder; and then vacuumizing the CdS coating device, introducing a gas into the CdS coating device, and coating a CdS film onto the uncovered surface of the CdTe film to form the N-type layer N contacted with the upper surface of the light absorption layer P;
4) forming the corroded light absorption layer D: covering the CdS film formed in the step 3); corroding the uncovered surface of the CdTe film using a chemical solution, and then washing and drying to form the corroded light absorption layer D;
5) forming the back contact transition layer E: placing the semi finished product obtained in the step 4) into a vacuum sputtering device; and using a radio frequency power source, using ZnTe as a target material for sputtering at a power, and using ZnTe:Cu as a target material for sputtering after changing the power to form a ZnTe/(ZnTe:Cu) composite layer, i.e., the back contact transition layer E, onto the surface of the corroded light absorption layer D; and
6) forming the positive layer M1 and the negative layer M2: placing the semi finished product obtained in the step 5) into a vacuum sputtering device; using Mo as a target material for sputtering to form a metal electrode layer onto the N-type layer N and the back contact transition layer E, and then laser cutting the metal electrode layer to form the positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N, in which the positive layer M1 and the negative layer M2 are insulated from each other. Therefore, the CdTe solar battery is manufactured. In the CdTe solar battery, the first electrode area B1 includes the corroded light absorption layer D, the back contact transition layer E, and the positive layer M1 laminated sequentially; and the second electrode area B2 includes the N-type layer N and the negative layer M2 laminated sequentially.
The present disclosure will be further described with reference to particular embodiments.
Embodiment 1
A CdTe solar battery is manufactured by:
1 ) providing and washing a glass substrate G: using common glass with a thickness of 2.2 mm as the substrate; ultrasonic washing the glass substrate G with acetone for 10 min to remove oil and fat on the surface of the glass substrate G; ultrasonic washing the glass substrate G with a cleaning reagent for 10 min to remove inorganic contaminants on the surface of the glass substrate G; ultrasonic washing the glass substrate G with deionized water for 10 min to remove impurities on the surface of the glass substrate G; drying the glass substrate G; and placing the glass substrate G into a pretreatment room for plasma cleaning;
2) forming a light absorption layer P: placing the glass substrate G onto a work rest of a vacuum CdTe coating device, in which the evaporation source was high pure CdTe powder; introducing the Ar gas into the CdTe coating device after the vacuum CdTe coating device was vacuumized until the pressure was about 1 χ 10"3Pa, in which the flow of the Ar gas was about 10ml/min, the temperature of the sublimation source was about 600° C, and the temperature of the substrate was about 500°C; vacuum coating a CdTe film for 2 min to form the light absorption layer P with a thickness of 3 μιτι on the glass substrate G;
3) forming a N-type layer N: covering a half of the surface of the CdTe film; placing the glass substrate G into a CdS coating device, in which the sublimation source was high pure CdS powder; introducing an Ar O2 gas with a volume ratio of 1 :1 into the CdS coating device after the CdS coating device was vacuumized until the pressure was about 1 χ 10"3Pa, in which the flow of the Ar O2 gas was about 10ml/min, the temperature of the sublimation source was about 550° C, and the temperature of the substrate was about 500 ° C; coating a CdS film for 6 s to form the N-type layer N with a thickness of about 120nm onto the uncovered surface of the CdTe film;
4) forming a corroded light absorption layer D: covering the CdS film formed in the step 3); corroding the uncovered surface of the CdTe film using NP solution at room temperature for 1 min, in which the volume ratio of HNO3:H3PO4:H2O was 1 :70:29, and then washing and drying the glass substrate G to form the corroded light absorption layer D with a thickness of about 0.6 μιτι;
5) forming a back contact transition layer E: placing the semi finished product obtained in the step 4) into a vacuum sputtering device; and using a frequency radio power source, using ZnTe as a target material for sputtering at a power of about 600W for about 10min, and then using ZnTe:Cu as a target material for sputtering at a power of about 300W for about 3min to form a ZnTe/(ZnTe:Cu) composite layer, i.e., the back contact transition layer E, with a thickness of about 50nm onto the surface of the corroded light absorption layer D; and
6) forming a positive layer M1 and a negative layer M2: placing the semi finished product obtained in the step 5) into a vacuum sputtering device; using a direct-current power source, using Mo as a target material for sputtering at a power of 300W for 10 min to form a Mo electrode layer with a thickness of about 150nm onto the N-type layer N and the back contact transition layer E, and then laser cutting the Mo electrode layer to form the positive layer M1 on the back contact transition layer E and form the negative layer M2 on the N-type layer N, in which the positive layer M1 and the negative layer M2 were insulated from each other. Therefore, the CdTe solar battery was manufactured. In the CdTe solar battery, the first electrode area B1 includes the corroded light absorption layer D, the back contact transition layer E, and the positive layer M1 laminated sequentially; and the second electrode area B2 includes the N-type layer N and the negative layer M2 laminated sequentially.
Embodiment 2
This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the glass substrate G is about 3.2mm.
Embodiment 3
This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the light absorption layer P is about 2μηη.
Embodiment 4
This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the N-type layer N is about 50nm.
Embodiment 5 This embodiment is substantially the same as Embodiment 1 , except that: the thickness of each of the positive layer M1 and the negative layer M2 is about 300nm.
Embodiment 6
This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the corroded light absorption layer D is about 2μηη.
Embodiment 7
This embodiment is substantially the same as Embodiment 1 , except that: the thickness of the back contact transition layer E is about 10nm.
Comparative Embodiment 1
This embodiment is substantially the same as Embodiment 1 , except that: the CdTe solar battery comprises a lamination structure including a glass substrate G, a transparent conductive film T, a CdS layer N, a CdTe layer P, a transition layer DE, and a back electrode layer M laminated sequentially; the glass substrate G was a substrate of ultra clear glass with a thickness of 2.2mm and was pretreated; the transparent conductive film T was FTO conductive glass with a thickness of Ο.δμιτι formed by sputtering; the glass substrate G was placed in a CdS coating device to coat the CdS layer N with a thickness of 120nm on the surface of the transparent conductive film T; the glass substrate G was placed in a CdTe coating device to coat the CdTe layer P with a thickness of 3μηη on the surface of the CdS layer N; the surface of the CdTe layer P was corroded, and a ZnTe layer with a thickness of 30nm and a ZnTe:Cu layer with a thickness of 20nm were deposited on the corroded surface of the CdTe layer P sequentially to form the transition layer DE; and the glass substrate G was placed in a vacuum sputtering device to form a Mo layer, i.e., the back electrode layer M, with a thickness of 150nm on the surface of the transition layer DE.
Performance Test
The CdTe solar batteries obtained according to Embodiments 1 to 7 and Comparative Embodiment 1 were tested as follows:
1 ) Open Circuit Voltage
Using the standard IEC 61646:2008;
2) Short Circuit Current
Using the standard IEC 61646:2008;
3) Photoelectrical Conversion Efficiency Using the standard IEC 61646:2008
The results are shown in Table 1 :
Figure imgf000013_0001
As shown in the Table 1 , compared with the CdTe solar battery obtained according to Comparative Embodiment 1 , the CdTe solar batteries obtained according to Embodiments 1 to 7 may have higher open circuit voltage, higher short circuit current, and higher photoelectrical conversion efficiency. This indicates that with the CdTe solar battery according to an embodiment of the present disclosure, the light absorption layer P is formed on the light receiving surface of the battery and contacted with the glass substrate G directly to directly receive light transmitted through the glass substrate G; and the first electrode area B1 to generate the positive current and lead the positive current out and the second electrode area B2 to generate the negative current and lead the negative current out are formed on the backlight surface respectively, that is, the positive current and the negative current are leaded out from the backlight surface of the battery respectively, thus largely increasing the photoelectric conversion efficiency of the CdTe solar battery.
Although explanatory embodiments have been shown and described, it would be appreciated by those skilled in the art that changes, alternatives, and modifications can be made in the embodiments without departing from spirit and principles of the disclosure. Such changes, alternatives, and modifications all fall into the scope of the claims and their equivalents.

Claims

WHAT IS CLAIMED IS:
1 . A CdTe solar battery, comprising:
a glass substrate (G);
a light absorption layer (P) formed on the glass substrate (G); and
a first electrode area (B1 ) and a second electrode area (B2) formed on the light absorption layer (P) respectively,
wherein
the first electrode area (B1 ) includes a corroded light absorption layer (D), a back contact transition layer (E), and a positive layer (M1 ) laminated sequentially;
the second electrode area (B2) includes a N-type layer (N) and a negative layer (M2) laminated sequentially;
the corroded light absorption layer (D) is formed on the light absorption layer (P); the N-type layer (N) is formed on the light absorption layer (P); and
the first electrode area (B1 ) and the second electrode area (B2) are insulated from each other.
2. The CdTe solar battery of claim 1 , wherein the glass substrate (G) has a thickness of about 1 mm to about 5mm.
3. The CdTe solar battery of claim 1 , wherein the light absorption layer (P) is a CdTe film with a thickness of about 2μηη to about 5μηη.
4. The CdTe solar battery of claim 1 , wherein the N-type layer (N) is a CdS film with a thickness of about 50nm to about 300nm.
5. The CdTe solar battery of claim 1 , wherein the corroded light absorption layer (D) is a corroded CdTe layer with a thickness of about 0.1 μιτι to about 1 μιτι.
6. The CdTe solar battery of claim 5, wherein the corroded light absorption layer (D) is formed by corroding a surface of the light absorption layer (P) using a chemical solution.
7. The CdTe solar battery of claim 6, wherein the chemical solution includes at least one selected from the group comprising HNO3-H3PO4 (NP) solution, Br2-methanol solution, and K2Cr2O7 H2SO4 solution.
8. The CdTe solar battery of claim 1 , wherein the back contact transition layer (E) is a ZnTe/(ZnTe:Cu) composite layer with a thickness of about 10nm to about 100nm.
9. The CdTe solar battery of claim 1 , wherein the positive layer (M1 ) and the negative layer (M2) are each a layer of a metal with a thickness of about 50nm to about 300nm; and the metal is at least one selected from the group comprising Mo, Ni, Cu, and Ag.
10. The CdTe solar battery of claim 1 , wherein the first electrode area (B1 ) and the second electrode area (B2) have the same thickness.
1 1 . A method of manufacturing a CdTe solar battery, comprising steps of:
(a) providing and washing a glass substrate (G);
(b) coating a light absorption layer (P) on the glass substrate (G); and
(c) forming a first electrode area (B1 ) and a second electrode area (B2) on the light absorption layer (P) respectively,
wherein
the first electrode area (B1 ) includes a corroded light absorption layer (D), a back contact transition layer (E), and a positive layer (M1 ) laminated sequentially;
the second electrode area (B2) includes a N-type layer (N) and a negative layer (M2) laminated sequentially;
the corroded light absorption layer (D) is formed on the light absorption layer (P); the N-type layer (N) is formed on the light absorption layer (P); and
the first electrode area (B1 ) and the second electrode area (B2) are insulated from each other.
12. The method of claim 1 1 , wherein in the step (a), washing the glass substrate (G) further includes the steps of:
a1 ) ultrasonic washing the glass substrate (G) with acetone, a cleaning reagent, and deionized water sequentially;
a2) drying the glass substrate (G); and
a3) plasma cleaning the glass substrate (G).
13. The method of claim 1 1 , wherein the step (b) further includes vacuum coating a CdTe film on the glass substrate (G).
14. The method of claim 13, wherein the step (c) further includes the steps of: c1 ) covering a first part of the surface of the CdTe film and then coating a CdS film onto a second part of the surface of the CdTe film to form the N-type layer (N);
c2) covering the CdS film formed on the second part of the surface of the CdTe film, corroding the first part of the surface of the CdTe film using a chemical solution, and then washing and drying to form the corroded light absorption layer (D);
c3) vacuum sputtering a ZnTe/(ZnTe:Cu) composite layer onto the surface of the corroded light absorption layer (D) to form the back contact transition layer (E); and
c4) vacuum sputtering a metal electrode layer onto the N-type layer (N) and the back contact transition layer (E), and then laser cutting the metal electrode layer to form the positive layer (M1 ) on the back contact transition layer (E) and form the negative layer (M2) on the N-type layer (N), wherein the positive layer (M1 ) and the negative layer (M2) are insulated from each other.
15. The method of claim 14, wherein the thickness of the CdTe film is about 2μηη to about 5μηη; the thickness of the CdS film is about 50nm to about 300nm; the thickness of the corroded light absorption layer (D) is about 0.1 m to about 1 μηη; the thickness of the ZnTe/(ZnTe:Cu) composite layer is about 10nm to 100nm; and the thickness of the metal electrode layer is about 50nm to about 300nm.
PCT/CN2012/072722 2011-03-29 2012-03-21 Solar battery and method of manufacturing the same WO2012130070A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110076750.3 2011-03-29
CN201110076750.3A CN102723384B (en) 2011-03-29 2011-03-29 CdTe solar cell and method for manufacturing same

Publications (1)

Publication Number Publication Date
WO2012130070A1 true WO2012130070A1 (en) 2012-10-04

Family

ID=46929440

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/072722 WO2012130070A1 (en) 2011-03-29 2012-03-21 Solar battery and method of manufacturing the same

Country Status (2)

Country Link
CN (1) CN102723384B (en)
WO (1) WO2012130070A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518045B (en) * 2013-09-26 2018-03-23 中国建材国际工程集团有限公司 For nursing one's health the method for the CdTe layer of CdTe thin-layer solar cells
CN108513683B (en) * 2016-12-27 2022-06-24 中国建材国际工程集团有限公司 Method for producing CdTe thin film solar cell
WO2018119685A1 (en) * 2016-12-27 2018-07-05 China Triumph International Engineering Co., Ltd. Method for forming a cdte thin film solar cell including a metal doping step and system for performing said metal doping step

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225575A (en) * 1990-12-27 1992-08-14 Matsushita Electric Ind Co Ltd Photovoltaic power device
CN101075645A (en) * 2007-04-10 2007-11-21 湖南师范大学 Cadmium telluride diaphragm solar battery corrosive fluid and its corrosive method
CN101807622A (en) * 2009-02-12 2010-08-18 四川尚德太阳能电力有限公司 Method for manufacturing cadmium telluride thin film solar cell modules

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5916375A (en) * 1995-12-07 1999-06-29 Japan Energy Corporation Method of producing photoelectric conversion device
JP4974986B2 (en) * 2007-09-28 2012-07-11 富士フイルム株式会社 Solar cell substrate and solar cell
KR101213470B1 (en) * 2008-09-08 2012-12-20 한국전자통신연구원 Antireflection coating for solar cell, solar cell, and manufacturing method for solar cell
CN101820027A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Deposition method of multi-section camium sulfide thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225575A (en) * 1990-12-27 1992-08-14 Matsushita Electric Ind Co Ltd Photovoltaic power device
CN101075645A (en) * 2007-04-10 2007-11-21 湖南师范大学 Cadmium telluride diaphragm solar battery corrosive fluid and its corrosive method
CN101807622A (en) * 2009-02-12 2010-08-18 四川尚德太阳能电力有限公司 Method for manufacturing cadmium telluride thin film solar cell modules

Also Published As

Publication number Publication date
CN102723384A (en) 2012-10-10
CN102723384B (en) 2015-05-13

Similar Documents

Publication Publication Date Title
CN101452969B (en) Copper zincium tin sulfur compound semiconductor thin-film solar cell and manufacturing method
CN103904151A (en) HIT solar cell and preparing method thereof
CN106098820B (en) A kind of new antimony selenide thin-film solar cells and preparation method thereof
CN108987528A (en) A kind of heterojunction solar battery edge insulation method
CN105449018A (en) Solar cell and preparation method thereof
CN104272470B (en) Solar cell and its manufacture method
JP2017054917A (en) Photoelectric conversion layer and manufacturing method of the same
WO2012130070A1 (en) Solar battery and method of manufacturing the same
CN105742402B (en) The preparation method and its structure of a kind of lamination solar cell
Caudevilla et al. Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells
JP2014503125A (en) Solar cell and manufacturing method thereof
KR101241708B1 (en) Solar cell apparatus and method of fabricating the same
US9147794B2 (en) Three terminal thin film photovoltaic module and their methods of manufacture
CN101707219B (en) Solar cell with intrinsic isolation structure and production method thereof
KR101306529B1 (en) Solar cell and method of fabricating the same
US8377737B1 (en) Methods of short wavelength laser scribing of a thin film photovoltaic device
WO2012163240A1 (en) Cdte solar battery and method of manufacturing the same
Yang et al. Sub-stochiometric MoO x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells
US20130092220A1 (en) Apparatus for generating electricity using solar power and method for manufacturing same
Caudevilla Gutiérrez et al. Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells
WO2011158724A1 (en) Thin-film solar cell
JP2015149393A (en) Method for manufacturing photoelectric conversion device
CN113964228A (en) Heterojunction solar cell and preparation method and application thereof
CN202332875U (en) Schottky structured amorphous silicon thin-film battery with dielectric layer
CN104253173A (en) A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12764257

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12764257

Country of ref document: EP

Kind code of ref document: A1