CN202332875U - Schottky structured amorphous silicon thin-film battery with dielectric layer - Google Patents
Schottky structured amorphous silicon thin-film battery with dielectric layer Download PDFInfo
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- CN202332875U CN202332875U CN 201120502926 CN201120502926U CN202332875U CN 202332875 U CN202332875 U CN 202332875U CN 201120502926 CN201120502926 CN 201120502926 CN 201120502926 U CN201120502926 U CN 201120502926U CN 202332875 U CN202332875 U CN 202332875U
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- amorphous silicon
- dielectric layer
- schottky junction
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a schottky structured amorphous silicon thin-film battery with a dielectric layer. The thin-film battery comprises a transparent substrate, a front transparent conductive layer TCO, an ohmic contact layer p-a-Si:H, active layer amorphous silicon i-a-Si:H or microcrystalline silicon i-muc-Si:H, the dielectric layer and a back electrode Al. A finished product is obtained by post-processing after the steps of cleaning a transparent substrate layer, sputtering and vacuum plating a TCO layer, carrying out PECVD (Plasma Enhanced Chemical Vapour Deposition) and vacuum plating a p-a-Si:H layer and an i-a-Si:H layer (or i-muc-Si:H), and cleaning and vacuum evaporating ( or spinning) the dielectric layer and a back electrode Al layer. By adopting an amorphous silicon thin-film schottky structure, because the dielectric layer is additionally arranged, absorption of sunlight spectrum in a long-wavelength region is increased, absorption loss and serial resistance are reduced, open-circuit voltage and filling factor are increased, the process is simple, and the manufacture cost can be greatly reduced.
Description
Technical field
The utility model relates to a kind of hull cell, particularly a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer.
Background technology
Amorphous silicon thin-film solar cell extensively receives people's attention owing to have advantages such as low cost, technology maturation.But minority carrierdiffusion length is short and photoelectric conversion efficiency is low, therefore needs to improve effective light absorption of amorphous silicon membrane battery and photoelectric conversion efficiency.
Most p-i-n structures that adopt use tco layer as transparency electrode exactly in the amorphous silicon membrane battery, and the p layer is as Window layer, and the i layer promptly is main light absorbing zone as the intrinsic layer of solar cell, forms the internal electric field that pn ties with the n layer, produces open circuit voltage.But doped layer p layer and n layer be to not directly effect of power transfer in the p-i-n structure, and the n layer has to absorb and causes power loss.
Because the amorphous silicon membrane optical band gap is 1.7eV, material itself is insensitive to the long-wavelength region, has therefore limited the photoelectric conversion efficiency of amorphous silicon battery.The effective way that addresses this problem is made lamination p-i-n battery exactly, on a p-i-n battery, deposits one or more p-i-n batteries exactly again.But increased the cost of manufacture of amorphous silicon battery like this, complex process.
Schottky junction structure in the amorphous silicon battery is owing to make simply, and cost is low, and along with the appearance of photovoltaic material, in the development of amorphous silicon battery, is playing the part of considerable role.
Traditional Schottky junction structure is sheet metal electrode, amorphous silicon active layer, passive electrode, utilizes the Schottky barrier of metal electrode and amorphous silicon to form internal electric field generation open circuit voltage.The production process of internal electric field no longer needs the n doped layer in the p-i-n structure, can avoid the absorption loss of n doped layer so fully.Wherein the sheet metal electrode side is a sensitive surface, therefore is called preceding Schottky junction structure again.
In traditional Schottky junction structure, exist because the pinning effect of the Fermi level that metal and unordered crack attitude cause, therefore can cause the deterioration of open circuit voltage and fill factor, curve factor.And the thin layer of preceding electrode has tangible light absorption.
In this case, obviously be difficult to control absorption loss and can't reach the effect that makes full use of solar spectrum.Therefore, in Schottky junction structure, how to reduce optical absorption loss, how to add one and have appropriate bandgap width and work function matching materials, reduce series resistance and strengthen carrier collection, can avoid pinning effect again, just become a problem demanding prompt solution.
The utility model content
The purpose of the utility model is in order to solve the problem that the spectrum utilance is not high, series resistance is big that above-mentioned existing amorphous silicon thin-film solar cell exists, and a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer is provided.
The amorphous silicon membrane battery of the Schottky junction structure that has dielectric layer of the utility model is the back of the body Schottky junction structure that has dielectric layer that is made up of from the bottom up transparent substrates (glass), preceding transparency conducting layer TCO, ohmic contact layer p-a-Si:H, absorbed layer (active layer) i-a-Si:H or microcrystal silicon i-μ c-Si:H, dielectric layer LiF or polymer, back electrode Al.
Described transparent substrates adopts the glass of high transmission rate.
Transparency conducting layer TCO before described, light pass by battery from it and absorb, and serve as the electrode of battery again, require transmitance height, good conductivity, adopt the method preparation of sputter.Its THICKNESS CONTROL is at 100nm.In order to increase the sunlight impingement rate, reduce catoptrical effect, TCO is processed suede structure.
Described ohmic contact layer p-a-Si:H adopts p type amorphous silicon membrane, and with the preparation of PECVD method, its THICKNESS CONTROL is at 20nm.
What described absorbed layer (active layer) adopted is amorphous silicon or microcrystal silicon, and its THICKNESS CONTROL is at 200～400nm.
What described dielectric layer adopted is lithium fluoride or polymer, with the method preparation of vapor deposition or spin coating.Its THICKNESS CONTROL is at 0.2～4nm.Dielectric layer plays the enhancing light absorption, reduces the effect of series resistance, pinning effect and the boundary defect that can avoid metal to contact with amorphous silicon.
Described back electrode adopts the Al film, and with the method preparation of vapor deposition, film thickness monitoring is at 50～100nm.
The beneficial effect of the utility model: the utility model has adopted the Schottky junction structure of amorphous silicon membrane, has increased dielectric layer, has improved the absorption of sunlight spectrum in the long-wavelength region, has reduced absorption loss and series resistance, has improved open circuit voltage and fill factor, curve factor; Technology is simple, can reduce manufacturing cost significantly.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
As shown in Figure 1, the utility model is the back of the body Schottky junction structure that has dielectric layer that is made up of from the bottom up transparent substrates 1, preceding transparency conducting layer TCO 2, ohmic contact layer p-a-Si:H 3, absorbed layer i-a-Si:H or microcrystal silicon i-μ c-Si:H 4, dielectric layer LiF or polymer 5 and back electrode 6.
Described transparent substrates 1 adopts the glass of high transmission rate.
Transparency conducting layer TCO2 before described, light pass by battery from it and absorb, and serve as the electrode of battery again, require transmitance height, good conductivity, adopt the method preparation of sputter.Its THICKNESS CONTROL is at 100nm.In order to increase the sunlight impingement rate, reduce catoptrical effect, TCO is processed suede structure.
Described ohmic contact layer p-a-Si:H 3 adopts p type amorphous silicon membrane, and with the preparation of PECVD method, its THICKNESS CONTROL is at 20nm.
What described absorbed layer 4 adopted is amorphous silicon or microcrystal silicon, and its THICKNESS CONTROL is at 200～400nm.
What described dielectric layer 5 adopted is lithium fluoride or polymer, with the method preparation of vapor deposition or spin coating.Its THICKNESS CONTROL is at 0.2～4nm.Dielectric layer plays the enhancing light absorption, reduces the effect of series resistance, pinning effect and the boundary defect that can avoid metal to contact with amorphous silicon.
Described back electrode 6 adopts the Al film, and with the method preparation of vapor deposition, film thickness monitoring is at 50～100nm.
Claims (7)
1. an amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer is characterized in that: be the back of the body Schottky junction structure that has dielectric layer that is made up of from the bottom up transparent substrates, preceding transparency conducting layer TCO, ohmic contact layer p-a-Si:H, absorbed layer i-a-Si:H or microcrystal silicon i-μ c-Si:H, dielectric layer LiF or polymer and back electrode Al.
2. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: described transparent substrates adopts the glass of high transmission rate.
3. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: transparency conducting layer TCO adopts suede structure before described, and its thickness is 100nm.
4. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: described ohmic contact layer p-a-Si:H adopts p type amorphous silicon membrane, and its thickness is 20nm.
5. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: what described absorbed layer adopted is amorphous silicon or microcrystal silicon, and its thickness is 200～400nm.
6. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: what described dielectric layer adopted is lithium fluoride or polymer, and its thickness is 0.2～4nm.
7. a kind of amorphous silicon membrane battery that has the Schottky junction structure of dielectric layer according to claim 1 is characterized in that: described back electrode adopts the Al film, and its thickness is 50～100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120502926 CN202332875U (en) | 2011-12-07 | 2011-12-07 | Schottky structured amorphous silicon thin-film battery with dielectric layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120502926 CN202332875U (en) | 2011-12-07 | 2011-12-07 | Schottky structured amorphous silicon thin-film battery with dielectric layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202332875U true CN202332875U (en) | 2012-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120502926 Expired - Fee Related CN202332875U (en) | 2011-12-07 | 2011-12-07 | Schottky structured amorphous silicon thin-film battery with dielectric layer |
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| CN (1) | CN202332875U (en) |
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2011
- 2011-12-07 CN CN 201120502926 patent/CN202332875U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20141207 |
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| EXPY | Termination of patent right or utility model |