MD2435G2 - Procedeu de obţinere a cristalului fotonic - Google Patents

Procedeu de obţinere a cristalului fotonic Download PDF

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Publication number
MD2435G2
MD2435G2 MDA20030081A MD20030081A MD2435G2 MD 2435 G2 MD2435 G2 MD 2435G2 MD A20030081 A MDA20030081 A MD A20030081A MD 20030081 A MD20030081 A MD 20030081A MD 2435 G2 MD2435 G2 MD 2435G2
Authority
MD
Moldova
Prior art keywords
photon crystal
mask
ions
crystal obtaining
directions
Prior art date
Application number
MDA20030081A
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English (en)
Russian (ru)
Other versions
MD2435F1 (ro
Inventor
Ион ТИГИНЯНУ
Еужен ФОКА
Владимир СЕРЖЕНТУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20030081A priority Critical patent/MD2435G2/ro
Publication of MD2435F1 publication Critical patent/MD2435F1/ro
Publication of MD2435G2 publication Critical patent/MD2435G2/ro

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Invenţia se refera la optoelectronică, în particular la procedee de obţinere a cristalelor fotonice.Procedeul de obţinere a cristalului fotonic include depunerea unei măşti pe una din suprafeţele cristalului de semiconductor sau de dielectric, totodată masca este executată în formă de grilă cu orificii amplasate în rânduri cu paşi egali, apoi are loc implantarea ionilor de energie înaltă în fiecare orificiu al măştii în patru direcţii şi decaparea electrochimică. Noutatea invenţiei constă în faptul că la implantare fiecare direcţie a ionilor formează un unghi de 45° faţă de normala la suprafaţa cristalului, iar unghiurile dintre direcţiile ionilor sunt egale cu 90°.
MDA20030081A 2003-03-14 2003-03-14 Procedeu de obţinere a cristalului fotonic MD2435G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20030081A MD2435G2 (ro) 2003-03-14 2003-03-14 Procedeu de obţinere a cristalului fotonic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20030081A MD2435G2 (ro) 2003-03-14 2003-03-14 Procedeu de obţinere a cristalului fotonic

Publications (2)

Publication Number Publication Date
MD2435F1 MD2435F1 (ro) 2004-04-30
MD2435G2 true MD2435G2 (ro) 2004-11-30

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MDA20030081A MD2435G2 (ro) 2003-03-14 2003-03-14 Procedeu de obţinere a cristalului fotonic

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3060G2 (ro) * 2005-08-10 2007-02-28 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a cristalului fotonic pe semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172267A (en) * 1990-12-21 1992-12-15 Bell Communications Research, Inc. Optical reflector structure, device, method of fabrication, and communications method
US6392787B1 (en) * 2000-09-01 2002-05-21 Agere Systems Guardian Corp. Process for fabricating article comprising photonic band gap material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172267A (en) * 1990-12-21 1992-12-15 Bell Communications Research, Inc. Optical reflector structure, device, method of fabrication, and communications method
US6392787B1 (en) * 2000-09-01 2002-05-21 Agere Systems Guardian Corp. Process for fabricating article comprising photonic band gap material

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
compounds. Mat. Res. Soc. Symp. Proc., K2.7.1, 2002, p. 692 *
E. Yablonovitch. Photonic bandgap crystals, J. Phys. Condens. Matt., 5, 1993, p. 2443 *
E. Yablonovitch. Photonic bandgap structures, J. Opt. Soc. Am., B10, 1993, p. 283 *
I.M. Tiginyanu et. al. Properties of 2D and 3D dielectric structures fabricated by electrochemical dissolution of II-V *
I.M. Tiginyanu et. al. Properties of 2D and 3D dielectric structures fabricated by electrochemical dissolution of II-V compounds. Mat. Res. Soc. Symp. Proc., K2.7.1, 2002, p. 692 *
J. N. Norris et. al. Chemical approaches to three-dimensional semiconductor photonic crystals. Adv. Mat., 13 2001, *
J. N. Norris et. al. Chemical approaches to three-dimensional semiconductor photonic crystals. Adv. Mat., 13 2001, p.371 *
J.D. Joannopoulos et al. Molding the flow of light. Photonic crystal, Princeton University Press. 1995, 133 p. *
K.M. Ho et. al. Existence of photonic band gap in periodic dielectric structures. Phys. Rev. Lett., 67, 1990, p. 3152 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3060G2 (ro) * 2005-08-10 2007-02-28 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a cristalului fotonic pe semiconductor

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Publication number Publication date
MD2435F1 (ro) 2004-04-30

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MM4A Patent for invention definitely lapsed due to non-payment of fees