MD2435G2 - Process for photon crystal obtaining - Google Patents

Process for photon crystal obtaining

Info

Publication number
MD2435G2
MD2435G2 MDA20030081A MD20030081A MD2435G2 MD 2435 G2 MD2435 G2 MD 2435G2 MD A20030081 A MDA20030081 A MD A20030081A MD 20030081 A MD20030081 A MD 20030081A MD 2435 G2 MD2435 G2 MD 2435G2
Authority
MD
Moldova
Prior art keywords
photon crystal
mask
ions
crystal obtaining
directions
Prior art date
Application number
MDA20030081A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2435F1 (en
Inventor
Ион ТИГИНЯНУ
Еужен ФОКА
Владимир СЕРЖЕНТУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20030081A priority Critical patent/MD2435G2/en
Publication of MD2435F1 publication Critical patent/MD2435F1/en
Publication of MD2435G2 publication Critical patent/MD2435G2/en

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  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the optoelectronics, namely to processes for photon crystal obtaining.The process for photon crystal obtaining includes the deposition of a mask onto one of the faces of the semiconductor or dielectric crystal, at the same time the mask is made in the form of a lattice with orifices, arranged in rows with equal steps, then it is carried out the implantation of the high-energy ions into each orifice of the mask in four directions and the electrochemical pickling. Novelty of the invention consists in that during implantation each direction of the ions form an angle of 45° about the normal to the crystal surface and the angles between the ions directions are equal to 90°.
MDA20030081A 2003-03-14 2003-03-14 Process for photon crystal obtaining MD2435G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20030081A MD2435G2 (en) 2003-03-14 2003-03-14 Process for photon crystal obtaining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20030081A MD2435G2 (en) 2003-03-14 2003-03-14 Process for photon crystal obtaining

Publications (2)

Publication Number Publication Date
MD2435F1 MD2435F1 (en) 2004-04-30
MD2435G2 true MD2435G2 (en) 2004-11-30

Family

ID=32677965

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20030081A MD2435G2 (en) 2003-03-14 2003-03-14 Process for photon crystal obtaining

Country Status (1)

Country Link
MD (1) MD2435G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3060G2 (en) * 2005-08-10 2007-02-28 Институт Прикладной Физики Академии Наук Молдовы Process for photon semiconductor crystal obtaining

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172267A (en) * 1990-12-21 1992-12-15 Bell Communications Research, Inc. Optical reflector structure, device, method of fabrication, and communications method
US6392787B1 (en) * 2000-09-01 2002-05-21 Agere Systems Guardian Corp. Process for fabricating article comprising photonic band gap material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172267A (en) * 1990-12-21 1992-12-15 Bell Communications Research, Inc. Optical reflector structure, device, method of fabrication, and communications method
US6392787B1 (en) * 2000-09-01 2002-05-21 Agere Systems Guardian Corp. Process for fabricating article comprising photonic band gap material

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
compounds. Mat. Res. Soc. Symp. Proc., K2.7.1, 2002, p. 692 *
E. Yablonovitch. Photonic bandgap crystals, J. Phys. Condens. Matt., 5, 1993, p. 2443 *
E. Yablonovitch. Photonic bandgap structures, J. Opt. Soc. Am., B10, 1993, p. 283 *
I.M. Tiginyanu et. al. Properties of 2D and 3D dielectric structures fabricated by electrochemical dissolution of II-V *
I.M. Tiginyanu et. al. Properties of 2D and 3D dielectric structures fabricated by electrochemical dissolution of II-V compounds. Mat. Res. Soc. Symp. Proc., K2.7.1, 2002, p. 692 *
J. N. Norris et. al. Chemical approaches to three-dimensional semiconductor photonic crystals. Adv. Mat., 13 2001, *
J. N. Norris et. al. Chemical approaches to three-dimensional semiconductor photonic crystals. Adv. Mat., 13 2001, p.371 *
J.D. Joannopoulos et al. Molding the flow of light. Photonic crystal, Princeton University Press. 1995, 133 p. *
K.M. Ho et. al. Existence of photonic band gap in periodic dielectric structures. Phys. Rev. Lett., 67, 1990, p. 3152 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3060G2 (en) * 2005-08-10 2007-02-28 Институт Прикладной Физики Академии Наук Молдовы Process for photon semiconductor crystal obtaining

Also Published As

Publication number Publication date
MD2435F1 (en) 2004-04-30

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Legal Events

Date Code Title Description
MM4A Patent for invention definitely lapsed due to non-payment of fees