LU68516A1 - - Google Patents

Info

Publication number
LU68516A1
LU68516A1 LU68516A LU68516DA LU68516A1 LU 68516 A1 LU68516 A1 LU 68516A1 LU 68516 A LU68516 A LU 68516A LU 68516D A LU68516D A LU 68516DA LU 68516 A1 LU68516 A1 LU 68516A1
Authority
LU
Luxembourg
Application number
LU68516A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of LU68516A1 publication Critical patent/LU68516A1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
LU68516A 1972-09-29 1973-09-27 LU68516A1 (US07935154-20110503-C00006.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2247975A DE2247975C3 (de) 1972-09-29 1972-09-29 Verfahren zur Herstellung von Dünnschicht-Schaltungen mit komplementären MOS-Transistoren

Publications (1)

Publication Number Publication Date
LU68516A1 true LU68516A1 (US07935154-20110503-C00006.png) 1973-12-10

Family

ID=5857826

Family Applications (1)

Application Number Title Priority Date Filing Date
LU68516A LU68516A1 (US07935154-20110503-C00006.png) 1972-09-29 1973-09-27

Country Status (9)

Country Link
US (1) US3859716A (US07935154-20110503-C00006.png)
JP (1) JPS5550397B2 (US07935154-20110503-C00006.png)
BE (1) BE805480A (US07935154-20110503-C00006.png)
DE (1) DE2247975C3 (US07935154-20110503-C00006.png)
FR (1) FR2201541B1 (US07935154-20110503-C00006.png)
GB (1) GB1417055A (US07935154-20110503-C00006.png)
IT (1) IT993472B (US07935154-20110503-C00006.png)
LU (1) LU68516A1 (US07935154-20110503-C00006.png)
NL (1) NL7313426A (US07935154-20110503-C00006.png)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
JPS5180178A (US07935154-20110503-C00006.png) * 1975-01-10 1976-07-13 Hitachi Ltd
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
JPS5272184A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Productuion of mos type transistor
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
US4333224A (en) * 1978-04-24 1982-06-08 Buchanan Bobby L Method of fabricating polysilicon/silicon junction field effect transistors
JPS54158878A (en) * 1978-06-05 1979-12-15 Nec Corp Manufacture of semiconductor device
JPS559490A (en) * 1978-07-07 1980-01-23 Matsushita Electric Ind Co Ltd Production method of insulating gate type semiconductor device
US4348804A (en) * 1978-07-12 1982-09-14 Vlsi Technology Research Association Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation
JPS5731907U (US07935154-20110503-C00006.png) * 1980-08-01 1982-02-19
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4825277A (en) * 1987-11-17 1989-04-25 Motorola Inc. Trench isolation process and structure
US4960727A (en) * 1987-11-17 1990-10-02 Motorola, Inc. Method for forming a dielectric filled trench
JP2831745B2 (ja) * 1989-10-31 1998-12-02 富士通株式会社 半導体装置及びその製造方法
JP2525707B2 (ja) * 1992-04-27 1996-08-21 セイコーエプソン株式会社 半導体集積回路
JP2525708B2 (ja) * 1992-04-27 1996-08-21 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH07335904A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
US6433361B1 (en) 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JPH0832039A (ja) * 1994-07-12 1996-02-02 Nippondenso Co Ltd 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3750268A (en) * 1971-09-10 1973-08-07 Motorola Inc Poly-silicon electrodes for c-igfets

Also Published As

Publication number Publication date
BE805480A (fr) 1974-01-16
DE2247975A1 (de) 1974-04-04
FR2201541A1 (US07935154-20110503-C00006.png) 1974-04-26
JPS4973983A (US07935154-20110503-C00006.png) 1974-07-17
FR2201541B1 (US07935154-20110503-C00006.png) 1977-09-09
DE2247975C3 (de) 1979-11-15
DE2247975B2 (de) 1979-03-15
GB1417055A (en) 1975-12-10
JPS5550397B2 (US07935154-20110503-C00006.png) 1980-12-17
NL7313426A (US07935154-20110503-C00006.png) 1974-04-02
US3859716A (en) 1975-01-14
IT993472B (it) 1975-09-30

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