LU101004A1 - Near infrared detector - Google Patents

Near infrared detector Download PDF

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Publication number
LU101004A1
LU101004A1 LU101004A LU101004A LU101004A1 LU 101004 A1 LU101004 A1 LU 101004A1 LU 101004 A LU101004 A LU 101004A LU 101004 A LU101004 A LU 101004A LU 101004 A1 LU101004 A1 LU 101004A1
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LU
Luxembourg
Prior art keywords
heterojunction
layer
organic
inorganic
silicon substrate
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LU101004A
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English (en)
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LU101004B1 (en
Inventor
Justyna Kocurek
Karolina Miszczyszyn
Grzegorz Babiarz
Michal Dlubek
Original Assignee
Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
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Publication of LU101004A1 publication Critical patent/LU101004A1/en
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Publication of LU101004B1 publication Critical patent/LU101004B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B7/00—Indigoid dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Claims (4)

  1. ANSPRÜCHE
    1. Nah-Infrarot-Photodetektor, der Infrarotstrahlung in ein elektrisches Signal umwandelt, bei Raumtemperatur arbeitet und eine Photodiode, die sich aus einer anorganischen Halbleiter-Silizium-Schicht und einer organischen Schicht zusammensetzt, sowie metallische Aluminiumelektroden einsetzt, die elektrische Kontakte zwischen dem Heteroübergang und einem externen Stromkreis bilden, dadurch gekennzeichnet, dass die Vorrichtung eine Schichtstruktur aufweist, in der die anorganische und die organische Schicht einen Hybrid-Heteroübergang formen, der organisches Halbleitermaterial enthält, das zu funktionalisierten Farbstoffen aus der Indigoid-Gruppe gehört, wobei das LUMO-Energieniveau unter -4 eV liegt.
  2. 2. Detektor nach Anspruch 1, wobei der Heteroübergang aus einer Schicht von 6,6‘-Dicyanoindigo, die auf dem Siliziumsubstrat abgeschieden ist, hergestellt ist.
  3. 3. Detektor nach Anspruch 1, wobei der Heteroübergang aus einer Schicht von 6,6‘-Dinitroindigo, die auf dem Siliziumsubstrat abgeschieden ist, hergestellt ist.
  4. 4. Detektor nach Anspruch 1, wobei es vorteilhaft ist, wenn die Indigoide mit den Substituentengruppen in den aromatischen Ringen zu den Nitro- oder Cyanid-Gruppen gehören.
LU101004A 2018-07-31 2018-11-08 Near infrared detector LU101004B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni

Publications (2)

Publication Number Publication Date
LU101004A1 true LU101004A1 (en) 2020-02-27
LU101004B1 LU101004B1 (en) 2020-06-24

Family

ID=64664362

Family Applications (1)

Application Number Title Priority Date Filing Date
LU101004A LU101004B1 (en) 2018-07-31 2018-11-08 Near infrared detector

Country Status (7)

Country Link
AT (1) AT521544A3 (de)
FI (1) FI20185973A1 (de)
GB (1) GB2587595A (de)
LU (1) LU101004B1 (de)
PL (1) PL426520A1 (de)
SE (1) SE1851428A1 (de)
WO (1) WO2020027670A1 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140661A1 (en) 2007-08-23 2010-06-10 Gebhard Matt Apparatus for converting of infrared radiation into electrical current
EP2816625A1 (de) 2013-06-21 2014-12-24 Inphotech Sp. z o.o. (Ltd) Vorrichtung zur Transformation von Infrarotstrahlung in elektrischen Strom oder elektrische Spannung bei Raumtemperatur und deren Herstellungsmethode
AT516109A1 (de) 2014-07-29 2016-02-15 Universität Linz Optoelektronischer Infrarotsensor
KR20170136393A (ko) * 2016-06-01 2017-12-11 김일구 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자

Also Published As

Publication number Publication date
FI20185973A1 (en) 2020-02-01
AT521544A2 (de) 2020-02-15
WO2020027670A1 (en) 2020-02-06
GB2587595A (en) 2021-04-07
SE1851428A1 (en) 2020-02-01
LU101004B1 (en) 2020-06-24
AT521544A3 (de) 2020-09-15
PL426520A1 (pl) 2020-02-10

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Effective date: 20200624