LT2891637T - Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas - Google Patents

Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas

Info

Publication number
LT2891637T
LT2891637T LTEP13892896.5T LT13892896T LT2891637T LT 2891637 T LT2891637 T LT 2891637T LT 13892896 T LT13892896 T LT 13892896T LT 2891637 T LT2891637 T LT 2891637T
Authority
LT
Lithuania
Prior art keywords
silicon wafer
monocrystalline silicon
texturizing additive
texturizing
additive
Prior art date
Application number
LTEP13892896.5T
Other languages
English (en)
Inventor
Liming Fu
Peiliang CHEN
Original Assignee
Changzhou Shichuang Energy Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Shichuang Energy Technology Co., Ltd. filed Critical Changzhou Shichuang Energy Technology Co., Ltd.
Publication of LT2891637T publication Critical patent/LT2891637T/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
LTEP13892896.5T 2013-09-04 2013-12-17 Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas LT2891637T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310394735.2A CN103451739B (zh) 2013-09-04 2013-09-04 单晶硅片制绒添加剂及其使用方法
PCT/CN2013/089672 WO2015032153A1 (zh) 2013-09-04 2013-12-17 单晶硅片制绒添加剂及其使用方法

Publications (1)

Publication Number Publication Date
LT2891637T true LT2891637T (lt) 2016-10-10

Family

ID=49734557

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP13892896.5T LT2891637T (lt) 2013-09-04 2013-12-17 Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas

Country Status (11)

Country Link
US (1) US9705016B2 (lt)
EP (1) EP2891637B1 (lt)
JP (1) JP2016532305A (lt)
KR (1) KR101613541B1 (lt)
CN (1) CN103451739B (lt)
ES (1) ES2584983T3 (lt)
LT (1) LT2891637T (lt)
MY (1) MY170623A (lt)
SG (1) SG11201405971YA (lt)
TW (1) TWI532824B (lt)
WO (1) WO2015032153A1 (lt)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103710705B (zh) * 2013-12-23 2016-01-20 北京合德丰材料科技有限公司 一种多晶硅片酸性制绒液的添加剂及其应用
CN104576831B (zh) * 2014-12-31 2016-10-12 江苏顺风光电科技有限公司 一种单晶硅片无醇制绒工艺及其制绒添加剂
CN104651949B (zh) * 2015-02-11 2017-09-29 常州君合科技股份有限公司 一种多晶硅片制绒添加剂
CN104988581A (zh) * 2015-08-04 2015-10-21 绍兴拓邦电子科技有限公司 一种高沸点单晶硅片喷洒制绒添加剂
CN105040108B (zh) * 2015-08-21 2017-11-17 浙江启鑫新能源科技股份有限公司 多晶硅太阳能电池的制绒方法
CN105113015A (zh) * 2015-08-21 2015-12-02 合肥中南光电有限公司 一种低反射率单晶硅片制绒液及其制备方法
CN105133025A (zh) * 2015-08-21 2015-12-09 合肥中南光电有限公司 一种高效单晶硅片制绒液及其制备方法
CN105133027A (zh) * 2015-08-21 2015-12-09 合肥中南光电有限公司 一种小绒面单晶硅片制绒液及其制备方法
CN105113009A (zh) * 2015-08-21 2015-12-02 合肥中南光电有限公司 一种环保型单晶硅片制绒液及其制备方法
CN105113013A (zh) * 2015-08-21 2015-12-02 合肥中南光电有限公司 一种高效环保单晶硅片制绒液及其制备方法
CN105133023A (zh) * 2015-08-21 2015-12-09 合肥中南光电有限公司 一种低挥发性单晶硅片制绒液及其制备方法
CN105133026A (zh) * 2015-08-21 2015-12-09 合肥中南光电有限公司 一种低损伤单晶硅片制绒液及其制备方法
CN105113014A (zh) * 2015-08-21 2015-12-02 合肥中南光电有限公司 一种除异味单晶硅片制绒液及其制备方法
CN105154984A (zh) * 2015-08-21 2015-12-16 合肥中南光电有限公司 一种易清洗的单晶硅片制绒液及其制备方法
CN105113016A (zh) * 2015-08-21 2015-12-02 合肥中南光电有限公司 一种去油去蜡单晶硅片制绒液及其制备方法
CN105133028A (zh) * 2015-08-25 2015-12-09 合肥中南光电有限公司 一种抗菌防霉硅片制绒剂及其制备方法
CN105133030A (zh) * 2015-08-25 2015-12-09 合肥中南光电有限公司 一种长效硅片制绒剂及其制备方法
CN105133031A (zh) * 2015-08-25 2015-12-09 合肥中南光电有限公司 一种竹叶提取液硅片制绒剂及其制备方法
CN106549083B (zh) * 2016-06-27 2018-08-24 苏州阿特斯阳光电力科技有限公司 一种晶体硅太阳能电池绒面结构的制备方法
CN106521636A (zh) * 2016-12-30 2017-03-22 德清丽晶能源科技有限公司 一种单晶硅片制绒添加剂
CN106835288A (zh) * 2016-12-30 2017-06-13 德清丽晶能源科技有限公司 一种单晶硅片的制绒方法
CN106833954B (zh) * 2017-01-23 2020-08-11 常州时创能源股份有限公司 单晶硅片制绒预清洗液的添加剂及其应用
CN109427930B (zh) * 2017-09-04 2022-02-25 苏州易益新能源科技有限公司 一种在晶体硅片表面选择性制备绒面的方法
CN107805845B (zh) * 2017-10-23 2020-06-09 常州时创能源股份有限公司 多晶黑硅的扩孔工艺
CN107747132A (zh) * 2017-10-27 2018-03-02 德清丽晶能源科技有限公司 一种太阳能电池单晶硅片的制绒方法
CN107747131A (zh) * 2017-10-27 2018-03-02 德清丽晶能源科技有限公司 一种单晶硅片制绒添加剂
CN107964686A (zh) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 一种用于单晶硅片制绒的制绒液
CN107955973A (zh) * 2017-10-27 2018-04-24 德清丽晶能源科技有限公司 一种电池用单晶硅片的制绒方法
CN107964684A (zh) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 一种太阳能电池用单晶硅片的制绒方法
CN107964685A (zh) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 一种单晶硅片的制绒方法
CN107747126A (zh) * 2017-11-03 2018-03-02 通威太阳能（安徽）有限公司 一种单晶硅无醇制绒添加剂、制绒液及其使用方法
CN107955974B (zh) * 2018-01-09 2020-06-09 常州时创能源股份有限公司 倒金字塔绒面单晶硅片的制绒添加剂及其应用
CN108221057B (zh) * 2018-01-18 2020-05-08 西安润威光电科技有限公司 利用氧化石墨烯基晶硅制绒添加剂制备硅太阳能电池绒面的方法
CN108221050B (zh) * 2018-01-19 2019-12-31 温岭汉德高分子科技有限公司 一种具有双峰金字塔绒面结构的单晶硅片
CN108219071B (zh) * 2018-01-19 2020-03-10 温岭汉德高分子科技有限公司 一种单晶硅片制绒用的硫酸软骨素-聚（乙烯基吡咯烷酮-乙烯基吡啶）共聚物的制备方法
CN108250363B (zh) * 2018-01-19 2020-04-10 温岭汉德高分子科技有限公司 一种单晶硅制绒添加剂
CN108360071B (zh) * 2018-02-25 2020-11-20 温岭汉德高分子科技有限公司 一种低反射率单晶硅片的制绒方法
CN108660510A (zh) * 2018-05-10 2018-10-16 天津赤霄科技有限公司 一种新型单晶硅片制绒添加剂的制造及简单制绒方法
CN110042474A (zh) * 2019-05-18 2019-07-23 上海汉遥新材料科技有限公司 一种单晶硅太阳能电池制绒添加剂及其应用
CN110257072A (zh) * 2019-06-13 2019-09-20 常州时创能源科技有限公司 硅片单面制绒与边缘刻蚀用添加剂及其应用
CN110528086A (zh) * 2019-08-31 2019-12-03 绍兴拓邦电子科技有限公司 用于硅异质结太阳能电池的制绒添加剂及其制绒方法
CN111139531A (zh) * 2020-03-18 2020-05-12 常州时创能源股份有限公司 单晶硅片的制绒添加剂及其应用
CN111455467A (zh) * 2020-04-09 2020-07-28 中国科学院微电子研究所 单晶硅制绒添加剂、制绒方法以及绒面单晶硅片制备方法
CN111354840B (zh) * 2020-04-22 2020-11-03 一道新能源科技(衢州)有限公司 一种选择性发射极双面perc太阳能电池的制备方法
CN111593412B (zh) * 2020-05-25 2021-03-30 常州时创能源股份有限公司 单晶硅片链式制绒用添加剂及其应用
CN111593413A (zh) * 2020-06-30 2020-08-28 常州时创能源股份有限公司 单晶硅片链式机台制绒用添加剂及其应用
CN112080348A (zh) * 2020-09-29 2020-12-15 常州时创能源股份有限公司 硅片清洗用添加剂及其应用
CN113668066A (zh) * 2021-08-19 2021-11-19 常州时创能源股份有限公司 一种用于快速制绒的制绒添加剂及应用
CN114318549A (zh) * 2021-11-30 2022-04-12 嘉兴市小辰光伏科技有限公司 一种用于弱粗抛工艺的单晶硅制绒添加剂及使用方法
CN114318550A (zh) * 2021-12-15 2022-04-12 嘉兴市小辰光伏科技有限公司 一种单晶硅二次制绒的添加剂及其制绒工艺
CN115216301B (zh) * 2022-06-23 2023-08-29 嘉兴学院 一种用于单晶硅的制绒液及制绒方法
CN115478327B (zh) * 2022-09-23 2024-02-27 浙江奥首材料科技有限公司 一种单晶硅蚀刻制绒添加剂、及包含其的单晶硅蚀刻制绒液、其制备方法及应用
CN115820256B (zh) * 2022-11-25 2024-05-24 嘉兴市小辰光伏科技有限公司 用于提升太阳能电池绒面均匀性的添加剂及其使用工艺
CN116004233A (zh) * 2022-12-12 2023-04-25 嘉兴市小辰光伏科技有限公司 一种提升硅片绒面均整度的刻蚀添加剂及使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3901565B2 (ja) * 2002-04-15 2007-04-04 富士フイルム株式会社 感熱性平版印刷版用原板
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
KR20100125448A (ko) * 2008-03-25 2010-11-30 어플라이드 머티어리얼스, 인코포레이티드 결정성 태양 전지들을 위한 표면 세정 및 텍스처링 프로세스
US8329046B2 (en) 2009-02-05 2012-12-11 Asia Union Electronic Chemical Corporation Methods for damage etch and texturing of silicon single crystal substrates
US20120295447A1 (en) 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
CN102010796B (zh) * 2010-12-25 2012-02-15 江西旭阳雷迪高科技股份有限公司 太阳能多晶硅片清洗液
WO2013100318A1 (ko) * 2011-12-26 2013-07-04 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
US8986559B2 (en) * 2012-02-29 2015-03-24 Avantor Performance Materials, Inc. Compositions and methods for texturing polycrystalline silicon wafers
CN102586888A (zh) * 2012-03-15 2012-07-18 苏州先拓光伏科技有限公司 一种无醇单晶硅制绒添加剂
CN102978710A (zh) * 2012-08-13 2013-03-20 杭州道乐太阳能技术有限公司 一种硅太阳电池表面陷光结构及制备方式
CN102839427B (zh) * 2012-08-28 2015-01-21 揭阳中诚集团有限公司 单晶硅片制绒无醇添加剂及其使用方法
CN102888657B (zh) * 2012-10-22 2015-04-15 江苏荣马新能源有限公司 一种晶体硅太阳能电池片制绒剂用添加剂
CN102952650B (zh) * 2012-11-16 2014-07-02 绍兴拓邦电子科技有限公司 一种太阳能电池硅片清洗剂及其清洗工艺
CN102912451B (zh) * 2012-11-21 2016-01-20 贵州威顿晶磷电子材料股份有限公司 一种单晶硅片制绒添加剂
CN103132079B (zh) * 2013-02-07 2015-07-08 睿纳能源科技（上海）有限公司 一种用于金刚线切割多晶硅片酸制绒的添加剂及使用方法

Also Published As

Publication number Publication date
EP2891637A4 (en) 2015-08-26
ES2584983T3 (es) 2016-09-30
KR101613541B1 (ko) 2016-04-19
EP2891637B1 (en) 2016-06-01
SG11201405971YA (en) 2015-04-29
KR20150056748A (ko) 2015-05-27
TW201416417A (zh) 2014-05-01
US9705016B2 (en) 2017-07-11
CN103451739B (zh) 2016-01-20
TWI532824B (zh) 2016-05-11
JP2016532305A (ja) 2016-10-13
EP2891637A1 (en) 2015-07-08
WO2015032153A1 (zh) 2015-03-12
MY170623A (en) 2019-08-21
US20160284880A1 (en) 2016-09-29
CN103451739A (zh) 2013-12-18

Similar Documents

Publication Publication Date Title
LT2891637T (lt) Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas
EP2891733A4 (en) POLYCRYSTALLINE SILICON WAFER TEXTURATION ADDITIVE AND USE THEREOF
HK1202983A1 (en) Semiconductor device and manufacturing method of the same
EP2942816A4 (en) SEMICONDUCTOR COMPONENT
EP2966683A4 (en) SEMICONDUCTOR COMPONENT
HK1206868A1 (en) Semiconductor device
SG11201508398TA (en) Silicon wafer polishing composition
EP2975641A4 (en) SEMICONDUCTOR COMPONENT
SG11201605303XA (en) Silicon wafer pre-alignment device and method therefor
EP2958156A4 (en) NEW COMPOUND SEMICONDUCTOR AND USE THEREOF
EP2874188A4 (en) SEMICONDUCTOR COMPONENT
GB201510735D0 (en) Semiconductor device
HK1205590A1 (en) Semiconductor device
HK1214032A1 (zh) 半導體裝置
HK1201376A1 (en) Semiconductor device
EP3021485A4 (en) SEMICONDUCTOR DEVICE
SG11201507962XA (en) Method for polishing silicon wafer and method for producing epitaxial wafer
HK1205356A1 (en) Semiconductor device
HK1201989A1 (en) Semiconductor device
SG11201506429SA (en) Epitaxial silicon wafer and method for manufacturing same
GB201320925D0 (en) Semiconductor devices and fabrication methods
HK1208958A1 (en) Semiconductor device
HK1206869A1 (en) Semiconductor device and method of manufacturing the same
HK1207474A1 (en) Semiconductor device
HK1202705A1 (en) Semiconductor device