LT2891637T - Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas - Google Patents
Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimasInfo
- Publication number
- LT2891637T LT2891637T LTEP13892896.5T LT13892896T LT2891637T LT 2891637 T LT2891637 T LT 2891637T LT 13892896 T LT13892896 T LT 13892896T LT 2891637 T LT2891637 T LT 2891637T
- Authority
- LT
- Lithuania
- Prior art keywords
- silicon wafer
- monocrystalline silicon
- texturizing additive
- texturizing
- additive
- Prior art date
Links
- 239000000654 additive Substances 0.000 title 1
- 230000000996 additive effect Effects 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310394735.2A CN103451739B (zh) | 2013-09-04 | 2013-09-04 | 单晶硅片制绒添加剂及其使用方法 |
PCT/CN2013/089672 WO2015032153A1 (zh) | 2013-09-04 | 2013-12-17 | 单晶硅片制绒添加剂及其使用方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
LT2891637T true LT2891637T (lt) | 2016-10-10 |
Family
ID=49734557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LTEP13892896.5T LT2891637T (lt) | 2013-09-04 | 2013-12-17 | Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas |
Country Status (11)
Country | Link |
---|---|
US (1) | US9705016B2 (lt) |
EP (1) | EP2891637B1 (lt) |
JP (1) | JP2016532305A (lt) |
KR (1) | KR101613541B1 (lt) |
CN (1) | CN103451739B (lt) |
ES (1) | ES2584983T3 (lt) |
LT (1) | LT2891637T (lt) |
MY (1) | MY170623A (lt) |
SG (1) | SG11201405971YA (lt) |
TW (1) | TWI532824B (lt) |
WO (1) | WO2015032153A1 (lt) |
Families Citing this family (54)
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CN105133025A (zh) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | 一种高效单晶硅片制绒液及其制备方法 |
CN105133027A (zh) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | 一种小绒面单晶硅片制绒液及其制备方法 |
CN105113009A (zh) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | 一种环保型单晶硅片制绒液及其制备方法 |
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CN114318550A (zh) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | 一种单晶硅二次制绒的添加剂及其制绒工艺 |
CN115216301B (zh) * | 2022-06-23 | 2023-08-29 | 嘉兴学院 | 一种用于单晶硅的制绒液及制绒方法 |
CN115478327B (zh) * | 2022-09-23 | 2024-02-27 | 浙江奥首材料科技有限公司 | 一种单晶硅蚀刻制绒添加剂、及包含其的单晶硅蚀刻制绒液、其制备方法及应用 |
CN115820256B (zh) * | 2022-11-25 | 2024-05-24 | 嘉兴市小辰光伏科技有限公司 | 用于提升太阳能电池绒面均匀性的添加剂及其使用工艺 |
CN116004233A (zh) * | 2022-12-12 | 2023-04-25 | 嘉兴市小辰光伏科技有限公司 | 一种提升硅片绒面均整度的刻蚀添加剂及使用方法 |
Family Cites Families (15)
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JP3901565B2 (ja) * | 2002-04-15 | 2007-04-04 | 富士フイルム株式会社 | 感熱性平版印刷版用原板 |
DE102007058829A1 (de) * | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung |
KR20100125448A (ko) * | 2008-03-25 | 2010-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정성 태양 전지들을 위한 표면 세정 및 텍스처링 프로세스 |
US8329046B2 (en) | 2009-02-05 | 2012-12-11 | Asia Union Electronic Chemical Corporation | Methods for damage etch and texturing of silicon single crystal substrates |
US20120295447A1 (en) | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
CN102010796B (zh) * | 2010-12-25 | 2012-02-15 | 江西旭阳雷迪高科技股份有限公司 | 太阳能多晶硅片清洗液 |
WO2013100318A1 (ko) * | 2011-12-26 | 2013-07-04 | 동우화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
US8986559B2 (en) * | 2012-02-29 | 2015-03-24 | Avantor Performance Materials, Inc. | Compositions and methods for texturing polycrystalline silicon wafers |
CN102586888A (zh) * | 2012-03-15 | 2012-07-18 | 苏州先拓光伏科技有限公司 | 一种无醇单晶硅制绒添加剂 |
CN102978710A (zh) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | 一种硅太阳电池表面陷光结构及制备方式 |
CN102839427B (zh) * | 2012-08-28 | 2015-01-21 | 揭阳中诚集团有限公司 | 单晶硅片制绒无醇添加剂及其使用方法 |
CN102888657B (zh) * | 2012-10-22 | 2015-04-15 | 江苏荣马新能源有限公司 | 一种晶体硅太阳能电池片制绒剂用添加剂 |
CN102952650B (zh) * | 2012-11-16 | 2014-07-02 | 绍兴拓邦电子科技有限公司 | 一种太阳能电池硅片清洗剂及其清洗工艺 |
CN102912451B (zh) * | 2012-11-21 | 2016-01-20 | 贵州威顿晶磷电子材料股份有限公司 | 一种单晶硅片制绒添加剂 |
CN103132079B (zh) * | 2013-02-07 | 2015-07-08 | 睿纳能源科技(上海)有限公司 | 一种用于金刚线切割多晶硅片酸制绒的添加剂及使用方法 |
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2013
- 2013-09-04 CN CN201310394735.2A patent/CN103451739B/zh active Active
- 2013-12-17 LT LTEP13892896.5T patent/LT2891637T/lt unknown
- 2013-12-17 WO PCT/CN2013/089672 patent/WO2015032153A1/zh active Application Filing
- 2013-12-17 EP EP13892896.5A patent/EP2891637B1/en active Active
- 2013-12-17 MY MYPI2014702513A patent/MY170623A/en unknown
- 2013-12-17 JP JP2016539392A patent/JP2016532305A/ja active Pending
- 2013-12-17 SG SG11201405971YA patent/SG11201405971YA/en unknown
- 2013-12-17 KR KR1020147030499A patent/KR101613541B1/ko active IP Right Grant
- 2013-12-17 ES ES13892896.5T patent/ES2584983T3/es active Active
- 2013-12-17 US US14/376,499 patent/US9705016B2/en active Active
- 2013-12-24 TW TW102148005A patent/TWI532824B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2891637A4 (en) | 2015-08-26 |
ES2584983T3 (es) | 2016-09-30 |
KR101613541B1 (ko) | 2016-04-19 |
EP2891637B1 (en) | 2016-06-01 |
SG11201405971YA (en) | 2015-04-29 |
KR20150056748A (ko) | 2015-05-27 |
TW201416417A (zh) | 2014-05-01 |
US9705016B2 (en) | 2017-07-11 |
CN103451739B (zh) | 2016-01-20 |
TWI532824B (zh) | 2016-05-11 |
JP2016532305A (ja) | 2016-10-13 |
EP2891637A1 (en) | 2015-07-08 |
WO2015032153A1 (zh) | 2015-03-12 |
MY170623A (en) | 2019-08-21 |
US20160284880A1 (en) | 2016-09-29 |
CN103451739A (zh) | 2013-12-18 |
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