KR980006438A - Polysilicon thin film transistor using silicide and manufacturing method - Google Patents

Polysilicon thin film transistor using silicide and manufacturing method Download PDF

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Publication number
KR980006438A
KR980006438A KR1019960024818A KR19960024818A KR980006438A KR 980006438 A KR980006438 A KR 980006438A KR 1019960024818 A KR1019960024818 A KR 1019960024818A KR 19960024818 A KR19960024818 A KR 19960024818A KR 980006438 A KR980006438 A KR 980006438A
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KR
South Korea
Prior art keywords
thin film
silicide
film transistor
polycrystalline silicon
layer
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KR1019960024818A
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Korean (ko)
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KR100252926B1 (en
Inventor
장진
이정하
류재일
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구자홍
엘지전자 주식회사
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Priority to KR1019960024818A priority Critical patent/KR100252926B1/en
Priority to GB9927225A priority patent/GB2339966B/en
Priority to GB9712868A priority patent/GB2314677B/en
Priority to FR9708021A priority patent/FR2752338B1/en
Priority to JP9185997A priority patent/JPH1098199A/en
Priority to DE19727396A priority patent/DE19727396B4/en
Publication of KR980006438A publication Critical patent/KR980006438A/en
Application granted granted Critical
Publication of KR100252926B1 publication Critical patent/KR100252926B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 실리사이드를 이용한 다결정질 실리콘 박막트랜지스터 및 그 제조방법에 관한 것으로서, 반도체층 패턴 상측의 게이트 절연막상의 게이트 전극과 게이트 절연막 양측의 소오스/드레인 전극을 실리사이드로 형성한다. 반도체층의 채널부분은 이온 주입 마스크로 질화막 혹은 산화막 패턴으로된 스토퍼를 사용하지 않고, 게이트 절연막과 상부의 반도체층으로 대신하므로써 공정이 간단하고 공정수율 및 소자동작의 신뢰성을 향상시킬 수 있는 다결정질 실리콘 박막트랜지스터를 제작 할 수 있다.The present invention relates to a polycrystalline silicon thin film transistor using a silicide and a method of manufacturing the same, wherein the gate electrode on the gate insulating film on the upper side of the semiconductor layer pattern and the source / drain electrodes on both sides of the gate insulating film are formed of silicide. The channel portion of the semiconductor layer may be replaced by a gate insulating film and a semiconductor layer on top of it without using a stopper made of a nitride film or an oxide film pattern as an ion implantation mask so as to simplify the process and improve the reliability of the process yield and device operation. A silicon thin film transistor can be manufactured.

Description

실리사이드를 이용한 폴리 실리콘 박막트랜지스터 및 제조 방법Polysilicon thin film transistor using silicide and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명의 실시 예에 따른 니켈 실리사이드의 표면의 주사전자현미경 사진.FIG. 1 is a scanning electron micrograph of the surface of a nickel silicide according to an embodiment of the present invention. FIG.

Claims (10)

실리사이드를 소오스 및 드레인 오옴의 접촉층으로 이용한 평면형 완전자기 정렬형의 다결정직 실리콘 박막트랜지스터.A planar fully self - aligned polycrystalline silicon thin film transistor using silicide as a contact layer of source and drain ohms. 동일한 실리사이드막을 게이트 및 소오스/드레인 전극물질로 이용한 다결정직 실리콘 박막트랜지스터.A polycrystalline silicon thin film transistor using the same silicide film as a gate and source / drain electrode material. 다결정직 실리콘 박막트랜지스터 제작시에 게이트 절연막 위에 비정질 실리콘층을 형성후, 형성된 비정질 실리콘을 실리사이드화하여 실리사이드 게이트 전극 구조를 갖는 박막트랜지스터.A thin film transistor having a silicide gate electrode structure by forming an amorphous silicon layer on a gate insulating film in the course of fabricating a polycrystalline silicon thin film transistor, and then siliciding the formed amorphous silicon. 다결정직 실리콘 박막트랜지스터 제작시에 게이트 패턴을 형성함으로써 노출된 게이트 절연막 양측의 다결정질 실리콘을 실리사이드화하여 실리사이드 소오스/드레인 전극 구조를 갖는 박막트랜지스터.A thin film transistor having a silicide source / drain electrode structure by siliciding polycrystalline silicon on both sides of an exposed gate insulating film by forming a gate pattern when fabricating a polycrystalline silicon thin film transistor. 절연 기판상의 다결정질 실리콘에 게이트 절연막을 형성하는 공정과, 상기 다결정질 실리콘층상의 게이트 절연막상에 비정질 실리콘층 형성공정과, 상기 다결정질 실리콘층의 채널로 예정된 부분상에 게이트 절연막 패턴임으로서 스토퍼를 대신하는 공정과, 상기 비정질 실리콘층상의 실리사이드화 공정과, 게이트 절연막 양측의 소오스/드레인으로 예정된 다결정질 실리콘층의 실리사이드화 공정과, 실리사이드층의 게이트 및 소오스/드레인 전극을 형성하는 공정을 구비한 평면형 완전 자기정렬 다결정질 실리콘 박막트랜지스터의 제조방법.A step of forming a gate insulating film on the polycrystalline silicon on the insulating substrate; a step of forming an amorphous silicon layer on the gate insulating film on the polycrystalline silicon layer; A step of forming a silicide layer on the amorphous silicon layer, a step of silicidizing the polycrystalline silicon layer to be a source / drain on both sides of the gate insulating film, and a step of forming gate and source / drain electrodes of the silicide layer (Method for fabricating a planar fully self - aligned polycrystalline silicon thin film transistor). 상기 제5항에서 레이저 아닐링 방법에 의한 다결정질 실리콘을 이용한 박막트랜지스터.The thin film transistor using polycrystalline silicon according to claim 5, by a laser annealing method. 상기 제5항에서 고상결정화 방법에 의한 다결정질 실리콘을 이용한 박막트랜지스터.The thin film transistor using polycrystalline silicon according to claim 5, 상기 제5항에서 실리사이드층으로 니켈실리사이드를 이용한 TFT 제조공정.A TFT manufacturing process using nickel silicide as the silicide layer in the above-described fifth aspect. 상기 제5항에서 실리사이드층을 형성하기 이전에 이온 도핑에 의해 도핑층을 이용하는 TFT 제조공정.The TFT manufacturing process according to claim 5, wherein the doping layer is used by ion doping before forming the silicide layer. 상기 제5항에서 게이트 절연막으로 질화막을 이용하는 TFT 제조공정.A TFT manufacturing process using a nitride film as a gate insulating film in the above-described fifth process.
KR1019960024818A 1996-06-28 1996-06-28 Polysilicon thin-film transistor using silicide and manufacturing method thereof KR100252926B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019960024818A KR100252926B1 (en) 1996-06-28 1996-06-28 Polysilicon thin-film transistor using silicide and manufacturing method thereof
GB9927225A GB2339966B (en) 1996-06-28 1997-06-18 Polysilicon thin film transistor
GB9712868A GB2314677B (en) 1996-06-28 1997-06-18 Method for fabricating thin film transistor
FR9708021A FR2752338B1 (en) 1996-06-28 1997-06-26 SILICIDE THIN FILM TRANSISTOR
JP9185997A JPH1098199A (en) 1996-06-28 1997-06-27 Polysilicon thin-film transistor using silicide and its manufacture
DE19727396A DE19727396B4 (en) 1996-06-28 1997-06-27 Polysilicon thin film transistor with silicide and manufacturing process therefor

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Application Number Priority Date Filing Date Title
KR1019960024818A KR100252926B1 (en) 1996-06-28 1996-06-28 Polysilicon thin-film transistor using silicide and manufacturing method thereof

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KR980006438A true KR980006438A (en) 1998-03-30
KR100252926B1 KR100252926B1 (en) 2000-04-15

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JP (1) JPH1098199A (en)
KR (1) KR100252926B1 (en)
DE (1) DE19727396B4 (en)
FR (1) FR2752338B1 (en)
GB (1) GB2314677B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020076791A (en) * 2001-03-30 2002-10-11 주승기 Method for crystallizing a silicone layer and method for fabricating a thin film transistor using the same

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Publication number Priority date Publication date Assignee Title
CN100411153C (en) * 2003-01-10 2008-08-13 统宝光电股份有限公司 Method for producing film tranistor array and its driving circuit
TWI382455B (en) 2004-11-04 2013-01-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US7550382B2 (en) 2005-05-31 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
US7696024B2 (en) 2006-03-31 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103943509B (en) * 2014-04-11 2017-02-15 深圳市华星光电技术有限公司 Manufacture procedure method of thin film transistor

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JPS57134970A (en) * 1981-02-13 1982-08-20 Citizen Watch Co Ltd Manufacture of thin film transistor
JPH0693509B2 (en) * 1983-08-26 1994-11-16 シャープ株式会社 Thin film transistor
EP0197531B1 (en) * 1985-04-08 1993-07-28 Hitachi, Ltd. Thin film transistor formed on insulating substrate
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JP2624797B2 (en) * 1988-09-20 1997-06-25 株式会社日立製作所 Active matrix substrate manufacturing method
JP2508851B2 (en) * 1989-08-23 1996-06-19 日本電気株式会社 Active matrix substrate for liquid crystal display device and manufacturing method thereof
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JP3662263B2 (en) * 1993-02-15 2005-06-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR100275717B1 (en) * 1993-12-28 2000-12-15 윤종용 Method for fabricating polysilicon thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020076791A (en) * 2001-03-30 2002-10-11 주승기 Method for crystallizing a silicone layer and method for fabricating a thin film transistor using the same

Also Published As

Publication number Publication date
FR2752338B1 (en) 2001-05-18
GB2314677A (en) 1998-01-07
DE19727396A1 (en) 1998-01-02
KR100252926B1 (en) 2000-04-15
GB2314677B (en) 2000-04-05
FR2752338A1 (en) 1998-02-13
GB9712868D0 (en) 1997-08-20
DE19727396B4 (en) 2004-07-22
JPH1098199A (en) 1998-04-14

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