DE19727396B4 - Polysilicon thin film transistor with silicide and manufacturing process therefor - Google Patents
Polysilicon thin film transistor with silicide and manufacturing process therefor Download PDFInfo
- Publication number
- DE19727396B4 DE19727396B4 DE19727396A DE19727396A DE19727396B4 DE 19727396 B4 DE19727396 B4 DE 19727396B4 DE 19727396 A DE19727396 A DE 19727396A DE 19727396 A DE19727396 A DE 19727396A DE 19727396 B4 DE19727396 B4 DE 19727396B4
- Authority
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- Prior art keywords
- layer
- polysilicon
- gate insulation
- film transistor
- highly doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 71
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 69
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 29
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 238000009413 insulation Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000007790 solid phase Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 18
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 and furthermore Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Polysilizium-Dünnschichttransistor mit:
einem Substrat (10);
einer Polysiliziumschicht (11) auf dem Substrat (10);
einer Gate-Isolierungsschicht (13) auf der Polysiliziumschicht (11);
einer Gate-Elektrode (14) über der Gate-Isolierungsschicht (13); und
einer Source-Elektrode (15) und einer Drain-Elektrode (15) auf der Polysiliziumschicht (11) jeweils seitlich der Gate-Elektrode (14), wobei die Source-Elektrode (15) und die Drain-Elektrode (12) jeweils aus einer an der Polysiliziumschicht (11) ausgebildeten hochdotierten Halbleiterschicht (16) und einer auf dieser ausgebildeten Silizidschicht (12) aufgebaut sind.Polysilicon thin film transistor with:
a substrate (10);
a polysilicon layer (11) on the substrate (10);
a gate insulation layer (13) on the polysilicon layer (11);
a gate electrode (14) over the gate insulation layer (13); and
a source electrode (15) and a drain electrode (15) on the polysilicon layer (11) respectively to the side of the gate electrode (14), the source electrode (15) and the drain electrode (12) each consisting of one on the polysilicon layer (11) formed highly doped semiconductor layer (16) and a silicide layer (12) formed thereon.
Description
Die Erfindung betrifft einen Dünnschichttransistor (TFT] und ein Herstellungsverfahren dafür und insbesondere einen TFT aus polykristallinem Silizium (Polysilizium) mit einem Silizid und ein Herstellungsverfahren dafür.The invention relates to a thin film transistor (TFT) and a manufacturing process therefor, and in particular a TFT made of polycrystalline silicon (polysilicon) with a silicide and a manufacturing process for it.
Unter verschiedenen Silizid-bildenden Metallen sind insbesondere hochtemperaturbeständige Metalle, wie Mn, Ta, Ti, W und Cr sowie Quasi-Edelmetalle, wie Co, Ni und Pd, bekannt. Es ist einfach, ein hochwertiges Silizid zu bilden und selektiv abzuätzen, und ferner weisen Silizide starke chemische Bindungen auf. Von diesen silizidbildenden Metallen bilden die Quasi-Edelmetalle Silizide bei einer niedrigen Temperatur (ca. 200°C) in Form von M2Si (M bedeutet Metall) mit einem größeren Anteil an Metall als Silizium. Insbesondere ist Nickel als Material für eine TFT-Elektrode geeignet, da mit Nickelsilizid lange, dünne Silizidschichten mit einer annähernd gleichbleibenden Dicke über die ganze Schichtfläche hinweg gebildet werden können, was zu einem auf der ganzen Nickelsilizidschicht gleichbleibenden Widerstand führt. Nickel bildet bei der Reaktion mit Polysilizium ein Silizid mit einem geringen Wiederstand.Among the various silicide-forming metals, particularly high-temperature-resistant metals such as Mn, Ta, Ti, W and Cr and quasi-noble metals such as Co, Ni and Pd are known. It is easy to form and selectively etch a high quality silicide, and furthermore, silicides have strong chemical bonds. Of these silicide-forming metals, the quasi-noble metals form silicides at a low temperature (approx. 200 ° C.) in the form of M 2 Si (M means metal) with a larger proportion of metal than silicon. Nickel is particularly suitable as a material for a TFT electrode, since long, thin silicide layers with an approximately constant thickness can be formed over the entire layer surface with nickel silicide, which leads to a constant resistance on the entire nickel silicide layer. Nickel forms a low resistance silicide when reacted with polysilicon.
TFTs werden häufig als Ansteuerungsbauteil für Pixel-Elektroden in Flüssigkristallanzeigen (LCD, Liquid Cristal Display) oder als Schaltbauteile in einem SRAM verwendet. TFTs können gemäß der Lage ihrer aktiven Schicht, d.h. einer Halbleiterschicht, in unterschiedliche Typen eingeordnet werden. Unter diesen Typen weist ein TFT eines geschichteten Typs (staggered type) eine Gate-Elektrode und eine Source-Elektrode einerseits sowie eine Drain-Elektrode andererseits auf, zwischen denen sich eine Halbleiterschicht befindet. Bei einem TFT eines koplanaren Typs sind die Gate-Elektrode sowie. die Source-Elektrode und die Drain-Elektrode dagegen auf einer gemeinsamen Seite der Halbleiterschicht angeordnet.TFTs are often used as a drive component for pixel electrodes in liquid crystal displays (LCD, Liquid Cristal Display) or as switching components in an SRAM used. TFTs can according to the situation its active layer, i.e. one semiconductor layer, in different Types can be classified. Among these types, a TFT has one a staggered type, a gate electrode and a Source electrode on the one hand and a drain electrode on the other, between which is a semiconductor layer. With a TFT one The coplanar type are the gate electrode as well. the source electrode and the drain electrode, however, on a common side of the Semiconductor layer arranged.
Aus
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Ferner ist aus
Aus
Auch diese bekannten Herstellungsverfahren sind jedoch aufgrund der zum Erreichen eines geringen Schichtwiderstandes erforderlichen, relativ hohen Prozeßtemperaturen sowie der vergleichsweise hohen Schichtdicken der Metallsilizidschicht aufwändig.These known manufacturing processes However, due to the need to achieve a low sheet resistance required, relatively high process temperatures and the comparatively high layer thicknesses of the metal silicide layer is expensive.
Dementsprechend ist die Erfindung auf einen Polysilizium-Dünnschichttransistor mit einem Silizid und ein Herstellungsverfahren dafür gerichtet, mit denen die oben genannten Probleme, die auf Beschränkungen und Nachteile des Standes der Technik zurückzuführen sind, vermieden werden.The invention is accordingly on a polysilicon thin film transistor with a silicide and a manufacturing process therefor directed with those of the above problems due to restrictions and disadvantages of the prior art are to be avoided.
Durch die vorliegende Erfindung wird ein Polysilizium-Dünnschichttransistor und ein Verfahren zu dessen Herstellung geschaffen, wobei der Herstellungsaufwand vereinfacht wird.By the present invention a polysilicon thin film transistor and created a method for its manufacture, the manufacturing effort is simplified.
Der erfindungsgemäße Polysilizium-Dünnschichttransistor weist ein Substrat, eine Polysiliziumschicht auf dem Substrat, eine Gate-Isolierungsschicht auf der Polysiliziumschicht, eine Gate-Elektrode über der Gate-Isolierungsschicht, und eine Source-Elektrode und eine Drain-Elektrode auf der Polysiliziumschicht jeweils seitlich der Gate-Elektrode auf, wobei die Source-Elektrode und die Drain-Elektrode jeweils aus einer an der Polysiliziumschicht ausgebildeten hochdotierten Halbleiterschicht und einer auf dieser ausgebildeten Silizidschicht aufgebaut sind.The polysilicon thin film transistor according to the invention has a substrate, a polysilicon layer on the substrate, a Gate insulation layer on the polysilicon layer, a gate electrode over the Gate insulation layer, and a source electrode and a drain electrode on the polysilicon layer to the side of the gate electrode on, with the source electrode and the drain electrode respectively from a highly doped formed on the polysilicon layer Semiconductor layer and a silicide layer formed thereon are built up.
Gemäß eines anderen Gesichtspunkts der Erfindung wird ein Verfahren zur Herstellung eines Polysilizium-Dünnschichttransistors eines sich selbst ausrichtenden Typs bereitgestellt, wobei das Verfahren folgende Schritte aufweist: Ausbilden einer Polysiliziumschicht auf einem isolierenden Substrat, Ausbilden einer Gate-Isolierungsschicht auf der Polysiliziumschicht, Strukturieren der Gate-Isolierungsschicht derart, dass ein erster Seitenbereich der Polysiliziumschicht und ein zweiter Seitenbereich der Polysiliziumschicht freigelegt werden, Ausbilden von jeweiligen hochdotierten Halbleiterschichten an dem ersten Seitenbereich der Polysiliziumschicht und an dem zweiten Seitenbereich der Polysiliziumschicht, Ausbilden von jeweiligen Silizidschichten auf der hochdotierten Halbleiterschicht des ersten Seitenbereichs der Polysiliziumschicht und auf der hochdotierten Halbleiterschicht des zweiten Seitenbereichs der Polysiliziumschicht, und Ausbilden einer Gate-Elektrode über der Gate-Isolierungsschicht.Another point of view The invention relates to a method for producing a polysilicon thin-film transistor self-aligning type provided, the method comprises the following steps: forming a polysilicon layer on an insulating substrate, forming a gate insulation layer on the polysilicon layer, patterning the gate insulation layer such that a first side region of the polysilicon layer and a second side region of the polysilicon layer is exposed, Forming respective highly doped semiconductor layers on the first Side region of the polysilicon layer and on the second side region the polysilicon layer, forming respective silicide layers on the highly doped semiconductor layer of the first side region the polysilicon layer and on the highly doped semiconductor layer the second side region of the polysilicon layer, and forming a gate electrode the gate insulation layer.
Die bevorzugte Ausführungsformen der Erfindung zeigenden Zeichnungen dienen zusammen mit der folgenden Beschreibung zur näheren Erläuterung der Prinzipien der Erfindung.The preferred embodiments Drawings showing the invention serve together with the following Description for closer explanation the principles of the invention.
In den Zeichnungen zeigen:The drawings show:
Im Folgenden wird detailliert auf die bevorzugten Ausführungsformen der Erfindung eingegangen, Beispiele derer aus den Zeichnungen ersichtlich sind.The following is detailed on the preferred embodiments received the invention, examples of which can be seen from the drawings.
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Gemäß dieser Ausführungsform
verhindern die Gate-Isolierungsschicht
Aus den
Wie aus
Wie aus
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Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR24818/96 | 1996-06-28 | ||
KR1019960024818A KR100252926B1 (en) | 1996-06-28 | 1996-06-28 | Polysilicon thin-film transistor using silicide and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19727396A1 DE19727396A1 (en) | 1998-01-02 |
DE19727396B4 true DE19727396B4 (en) | 2004-07-22 |
Family
ID=19464086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19727396A Expired - Lifetime DE19727396B4 (en) | 1996-06-28 | 1997-06-27 | Polysilicon thin film transistor with silicide and manufacturing process therefor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH1098199A (en) |
KR (1) | KR100252926B1 (en) |
DE (1) | DE19727396B4 (en) |
FR (1) | FR2752338B1 (en) |
GB (1) | GB2314677B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020076791A (en) * | 2001-03-30 | 2002-10-11 | 주승기 | Method for crystallizing a silicone layer and method for fabricating a thin film transistor using the same |
CN100411153C (en) * | 2003-01-10 | 2008-08-13 | 统宝光电股份有限公司 | Method for producing film tranistor array and its driving circuit |
TWI382455B (en) | 2004-11-04 | 2013-01-11 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing the same |
US7550382B2 (en) | 2005-05-31 | 2009-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device |
US7696024B2 (en) | 2006-03-31 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN103943509B (en) * | 2014-04-11 | 2017-02-15 | 深圳市华星光电技术有限公司 | Manufacture procedure method of thin film transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2909320A1 (en) * | 1978-03-17 | 1979-09-20 | Rca Corp | MOSFET e.g. silicon-on-sapphire FET - where source, drain, and gate are covered with metal silicide reducing contact resistance |
EP0197531A2 (en) * | 1985-04-08 | 1986-10-15 | Hitachi, Ltd. | Thin film transistor formed on insulating substrate |
US5008218A (en) * | 1988-09-20 | 1991-04-16 | Hitachi, Ltd. | Method for fabricating a thin film transistor using a silicide as an etch mask |
EP0451968A1 (en) * | 1990-04-11 | 1991-10-16 | THE GENERAL ELECTRIC COMPANY, p.l.c. | Process for manufacturing thin film transistor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57134970A (en) * | 1981-02-13 | 1982-08-20 | Citizen Watch Co Ltd | Manufacture of thin film transistor |
JPH0693509B2 (en) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | Thin film transistor |
JPS6257252A (en) * | 1985-09-06 | 1987-03-12 | Nippon Telegr & Teleph Corp <Ntt> | Thin film transistor |
GB2215126B (en) * | 1988-02-19 | 1990-11-14 | Gen Electric Co Plc | Process for manufacturing a thin film transistor |
JP2508851B2 (en) * | 1989-08-23 | 1996-06-19 | 日本電気株式会社 | Active matrix substrate for liquid crystal display device and manufacturing method thereof |
JP3662263B2 (en) * | 1993-02-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
KR100275717B1 (en) * | 1993-12-28 | 2000-12-15 | 윤종용 | Method for fabricating polysilicon thin film transistor |
-
1996
- 1996-06-28 KR KR1019960024818A patent/KR100252926B1/en not_active IP Right Cessation
-
1997
- 1997-06-18 GB GB9712868A patent/GB2314677B/en not_active Expired - Lifetime
- 1997-06-26 FR FR9708021A patent/FR2752338B1/en not_active Expired - Lifetime
- 1997-06-27 JP JP9185997A patent/JPH1098199A/en active Pending
- 1997-06-27 DE DE19727396A patent/DE19727396B4/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2909320A1 (en) * | 1978-03-17 | 1979-09-20 | Rca Corp | MOSFET e.g. silicon-on-sapphire FET - where source, drain, and gate are covered with metal silicide reducing contact resistance |
EP0197531A2 (en) * | 1985-04-08 | 1986-10-15 | Hitachi, Ltd. | Thin film transistor formed on insulating substrate |
US5008218A (en) * | 1988-09-20 | 1991-04-16 | Hitachi, Ltd. | Method for fabricating a thin film transistor using a silicide as an etch mask |
EP0451968A1 (en) * | 1990-04-11 | 1991-10-16 | THE GENERAL ELECTRIC COMPANY, p.l.c. | Process for manufacturing thin film transistor |
Non-Patent Citations (2)
Title |
---|
VLSI Metallization: Physics and Techn. Artec House, 1991, pp. 163-171 * |
VLSI Metallization: Physics and Techn. Artec House, 1991, pp. 223-225 * |
Also Published As
Publication number | Publication date |
---|---|
DE19727396A1 (en) | 1998-01-02 |
FR2752338A1 (en) | 1998-02-13 |
KR980006438A (en) | 1998-03-30 |
GB2314677B (en) | 2000-04-05 |
GB2314677A (en) | 1998-01-07 |
GB9712868D0 (en) | 1997-08-20 |
JPH1098199A (en) | 1998-04-14 |
KR100252926B1 (en) | 2000-04-15 |
FR2752338B1 (en) | 2001-05-18 |
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