KR980005328A - 반사굴절 광학계 - Google Patents

반사굴절 광학계 Download PDF

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Publication number
KR980005328A
KR980005328A KR1019970021294A KR19970021294A KR980005328A KR 980005328 A KR980005328 A KR 980005328A KR 1019970021294 A KR1019970021294 A KR 1019970021294A KR 19970021294 A KR19970021294 A KR 19970021294A KR 980005328 A KR980005328 A KR 980005328A
Authority
KR
South Korea
Prior art keywords
optical system
lens group
imaging optical
light
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970021294A
Other languages
English (en)
Korean (ko)
Inventor
야스히로 오무라
Original Assignee
고노 시게오
니콘 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고노 시게오, 니콘 코포레이션 filed Critical 고노 시게오
Publication of KR980005328A publication Critical patent/KR980005328A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019970021294A 1996-06-20 1997-05-28 반사굴절 광학계 Withdrawn KR980005328A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP180013/1996 1996-06-20
JP8180013A JPH1010431A (ja) 1996-06-20 1996-06-20 反射屈折光学系

Publications (1)

Publication Number Publication Date
KR980005328A true KR980005328A (ko) 1998-03-30

Family

ID=16075939

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970021294A Withdrawn KR980005328A (ko) 1996-06-20 1997-05-28 반사굴절 광학계

Country Status (3)

Country Link
JP (1) JPH1010431A (enExample)
KR (1) KR980005328A (enExample)
DE (1) DE19726058A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09311278A (ja) 1996-05-20 1997-12-02 Nikon Corp 反射屈折光学系
JP3395801B2 (ja) 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
USRE38438E1 (en) 1994-08-23 2004-02-24 Nikon Corporation Catadioptric reduction projection optical system and exposure apparatus having the same
JPH08179204A (ja) 1994-11-10 1996-07-12 Nikon Corp 投影光学系及び投影露光装置
JP3454390B2 (ja) 1995-01-06 2003-10-06 株式会社ニコン 投影光学系、投影露光装置及び投影露光方法
US6512631B2 (en) * 1996-07-22 2003-01-28 Kla-Tencor Corporation Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system
EP1079253A4 (en) 1998-04-07 2004-09-01 Nikon Corp DEVICE AND PROCESS FOR PROJECTION EXPOSURE, AND OPTICAL SYSTEM WITH REFLECTION AND REFRACTION
EP1293832A1 (en) 1998-06-08 2003-03-19 Nikon Corporation Projection exposure apparatus and method
EP0989434B1 (en) * 1998-07-29 2006-11-15 Carl Zeiss SMT AG Catadioptric optical system and exposure apparatus having the same
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
WO2002044786A2 (en) * 2000-11-28 2002-06-06 Carl Zeiss Smt Ag Catadioptric projection system for 157 nm lithography
JP4532647B2 (ja) 2000-02-23 2010-08-25 キヤノン株式会社 露光装置
US7301605B2 (en) * 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
DE10127227A1 (de) 2001-05-22 2002-12-05 Zeiss Carl Katadioptrisches Reduktionsobjektiv
US7046459B1 (en) 2001-12-18 2006-05-16 Carl Zeiss Smt Ag Catadioptric reductions lens
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102005033564A1 (de) * 2005-07-19 2007-02-01 Carl Zeiss Smt Ag Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage oder eines digitalen Projektionssystems

Also Published As

Publication number Publication date
JPH1010431A (ja) 1998-01-16
DE19726058A1 (de) 1998-01-02

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19970528

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid