KR970077756A - 광전 변환기 및 그 제조방법 - Google Patents

광전 변환기 및 그 제조방법 Download PDF

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KR970077756A
KR970077756A KR1019970020113A KR19970020113A KR970077756A KR 970077756 A KR970077756 A KR 970077756A KR 1019970020113 A KR1019970020113 A KR 1019970020113A KR 19970020113 A KR19970020113 A KR 19970020113A KR 970077756 A KR970077756 A KR 970077756A
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support plate
photoelectric converter
assembly surface
connection
recess
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KR1019970020113A
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볼프강 그라만
게오르크 보그너
랄프 디트리히
마르틴 바이게르트
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로더리히 네테부쉬; 롤프 옴케
지멘스 안티엔게젤샤프트
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Publication of KR970077756A publication Critical patent/KR970077756A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

본 발명은 지지체 유니트(2) 상에 고정된 적어도 하나의, 광선을 송신 및/또는 수신하는 몸체(1)를 포함하는 광전 변환기에 관한 것이다. 지지체 유니트(2)는 소수의 접속 부품(4, 5 또는 4′, 5′)이 배치된 조립면(3)을 포함한다. 접속 부품(4, 5 또는 4′, 5′)은 접촉 평면을 정하는 전기 접속면(16, 17 또는 16′, 17′)을 가지며, 상기 접촉 평면(14)과 조립면(3) 사이의 간격이 조립면(3)에 관련해서 경우에 따라 전체 접속 도체(26) 및/또는 커버링 수단(27)을 포함하는 몸체(1)의 최대 높이 보다 크다.

Description

광전 변환기 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (12)

  1. 지지체 유니트(2) 상에 고정된 적어도 하나의 광선을 송신 및/또는 수신하는 몸체(1)를 포함하는 광전 변환기에 있어서,지지체 유니트(2)가 몸체(1)가 고정된 조립면(3)을 포함하며, 조립면(3)에는 전기 접속면(16, 17 또는 16′, 17′)을 가진 소수의 접속 부품(4, 5 또는 4′, 5′)이 배치되고 상기 접속면의 전기 접속수단(12, 13, 26)에 의해 몸체(1)의 전기 접점(22, 23)에 도전 접속되며, 접속 부품(4, 5 또는 4′, 5′)은 조립면(3)에 관련해서 전체 접속수단(12, 13,26)을 포함하는 몸체(1)의 최대 높이가 조립면(3)과 접속면(16, 17)에 의해 정해지는 접촉평면(14)사이의 간격 보다 작게 형성되어 배치되는 것을 특징으로 하는 광전 변환기.
  2. 제1항에 있어서, 광선을 송신 및/또는 수신하는 몸체(1)가 반도체 칩 또는 폴리머-발광-또는-레이저 다이오드인 것을 특징으로 하는 광전 변환기.
  3. 제1항 또는 2항에 있어서, 몸체(1)가 지지체 유니트(2)쪽으로 향한 광선 배출면 및/또는 -유입면(6)을 포함하고, 지지체 유니트(2)는 몸체(1)로부터 송신 및/또는 수신되는 광선의 적어도 일부를 투과시키는 재료로 이루어지는 것을 특징으로 하는 광전 변환기.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 지지체 유니트(2)가 리세스(8)를 가진 지지체 플레이트(7)를 포함하며, 리세스(8)의 바닥면 상에 조립면(3)이 제공되고 리세스(8)의 측벽의 적어도 부분 영역이 접속 부품(4, 5)으로서 이용되는 것을 특징으로 하는 광전 변환기.
  5. 제4항에 있어서, 지지체 플레이트(7)가 절연 재료로 이루어지거나 또는 경우에 따라 리세스(8)내에 그리고 접속 부품(4, 5) 상에 적어도 부분적으로 절연층(15)을 가지며, 리세스(8) 내에 그리고 접속 부품(4, 5) 상에 몸체(1)의 전기 접전(22, 23)에 접속가능한, 소수의 도전성 접속 스트림(12, 13)이 제공되고, 상기 접속 스트립은 접속 부품(4, 5) 상에 소수의 접속면(16, 17)이 형성되도록 구조화되는 것을 특징으로 하는 광전 변환기.
  6. 제3항 내지 5항 중 어느 한 항에 있어서, 지지체 유니트(2)가 광선 포커싱 수단을 포함하는 것을 특징으로 하는 광전 변환기.
  7. 제1항 내지 3항 중 어는 한 항 및 제3항 및 6항에 있어서, 지지체 플레이트(7)가 전기 절연재료를 이루어지거나 또는 지지체 플레이트가 적어도 부분적을 절연층(15)을 포함하며 지지체 플레이트(7) 상에 적어도 2개의 구조화된 금속층이 제공되고, 상기 금속층 상에 도전성 접속부품(4′, 5′)이 배치되는 것을 특징으로 하는 광전 변환기.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서, 지지체 플레이트(7)와는 다른 굴절 인덱스를 갖는 부가의 플레이트(18)가 몸체(1)에 마주놓인 지지체 플레이트(7)의 측면 상에 제공되는 것을 특징으로 하는 광전 변환기.
  9. 제8항에 있어서, 부가의 플레이트(18)가 광선 포커싱 수단(21)을 포함하는 것을 특징으로 하는 광전 변환기.
  10. 제1항 내지 9항 중 어느 한 항에 있어서, 몸체(1)가 커버(27)를 포함하는 것을 특징으로 하는 광전 변환기.
  11. a) 다수의 조립면(3)를 정하는 지지체 플레이트(30)상에 다수의 도전성 접속 스트립(12, 13)을 제조하는 단계, b) 몸체(1)의 전기 접점이 접속 스트립(12, 13)에 도전 접속되도록, 지지체 플레이트(30)의 조립면(3) 상에 다수의 몸체(1)를 조립하는 단계, c) 접속 부품(4′, 5′)이 적어도 부분적으로 접속 스트림(12, 13)상에 놓이도록, 지지체 플레이트(7) 상에 다수의 접속 부품(4′, 5′)을 제공하는 단계를 포함하는 것을 특징으로 하는 제7항에 따른 광전 변환기의 제조 방법.
  12. a) 지지체 플레이트(7)의 재료로 이루어진 지지체 플레이트(30) 내에 조립면(3)을 가진 다수의 리세스(8)를 만드는 단계, b) 지지체 플레이트(30)상에 접속면(16, 17)을 가진 다수의 전기 접속 스트립(12, 13)을 만드는 단계, c) 리세스(8)내의 조립면(3) 상에 다수의 몸체(1)를 고정시키고 몸체(1)의 전기 접점 (22, 23)을 접속 스트립(12, 13)에 접속시키는 단계, 및 d) 지지체 플레이트(30)를 개별 광전 변환기로 소잉하는 단계를 포함하는 것을 특징으로 하는 제5항 또는 6항에 따른 다수의 광전 변환기의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019970020113A 1996-05-24 1997-05-23 광전 변환기 및 그 제조방법 KR970077756A (ko)

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DE19621124A DE19621124A1 (de) 1996-05-24 1996-05-24 Optoelektronischer Wandler und dessen Herstellungsverfahren
DE19621124.7 1996-05-24

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US (1) US5907151A (ko)
EP (1) EP0809304B1 (ko)
JP (1) JPH1056209A (ko)
KR (1) KR970077756A (ko)
DE (2) DE19621124A1 (ko)

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