CN102610730B - 发光二极管封装结构及其制造方法 - Google Patents

发光二极管封装结构及其制造方法 Download PDF

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CN102610730B
CN102610730B CN201110024973.5A CN201110024973A CN102610730B CN 102610730 B CN102610730 B CN 102610730B CN 201110024973 A CN201110024973 A CN 201110024973A CN 102610730 B CN102610730 B CN 102610730B
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emitting diode
substrate
light
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CN102610730A (zh
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陈滨全
林新强
曾文良
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Zhanjing Technology Shenzhen Co Ltd
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Abstract

本发明涉及一种发光二极管封装结构，包括基板、电极层、发光二极管芯片和封装层。所述基板上形成贯穿的通孔，该发光二极管封装结构还包括盖设于通孔一侧的支撑板。电极层镀在所述基板和支撑板的表面。发光二极管芯片设置于通孔内并位于支撑板上，发光二极管芯片通过金属导线与所述电极层电性连接。封装层覆盖所述发光二极管芯片和金属导线。本发明还涉及一种发光二极管封装结构的制造方法。

Description

发光二极管封装结构及其制造方法
技术领域
本发明涉及半导体结构，尤其涉及一种发光二极管封装结构及其制造方法。
背景技术
目前发光二极管(Light Emitting Diode，LED)封装结构大都是在基板上形成反射杯，所述反射杯从基板的其中一表面向另一表面凹陷形成，发光二极管放置于反射杯中，该反射杯的深度至少大于发光二极管的厚度，且基板上对应形成反射杯处的厚度通常设置在一定范围内以保证具有足够的强度支撑位于该反射杯内的发光二极管，因此，这种发光二极管封装结构中基板的厚度较大，从而导致封装后的发光二极管封装结构的厚度较大。而一些较薄的发光二极管封装结构，如于基板上设置通孔，并于基板的外侧设置电极层以支撑位于通孔内的发光二极管，为了保证足够的支撑强度，往往需要于基板的外侧设置至少两层以上的电极层，从而造成该封装结构复杂，且设置多层电极层会导致制程非常复杂且良率不高。
发明内容
有鉴于此，有必要提供一种较薄且结构简单的发光二极管封装结构及其制造方法。
一种发光二极管封装结构，包括基板、电极层、发光二极管芯片和封装层。所述基板上形成贯穿的通孔，该发光二极管封装结构还包括盖设于通孔一侧的支撑板。电极层镀在所述基板和支撑板的表面。发光二极管芯片设置于通孔内并位于支撑板上，发光二极管芯片通过金属导线与所述电极层电性连接。封装层覆盖所述发光二极管芯片和金属导线。
一种发光二极管封装结构的制造方法，包括以下步骤：
提供基板，所述基板上形成有贯穿的通孔；
提供支撑板，将支撑板设置于通孔的一侧并与基板固定连接；
在基板和支撑板的表面上形成电极层；
将发光二极管芯片置于通孔内并贴设于所述通孔一侧的支撑板上，并通过金属导线将发光二极管芯片与所述电极层电性连接；
形成一封装层，覆盖所述发光二极管芯片和金属导线，得到发光二极管封装结构。
发光二极管封装结构中，由于所述基板上形成通孔，并于通孔的底端设置支撑板，发光二极管芯片设置于所述通孔内并贴设于支撑板上。通过设置支撑板支撑位于对应通孔内的发光二极管芯片，并在基板表面及支撑板表面镀设电极层用于导电并起到反射光线的作用，使得整个封装结构很薄，且结构简单，并简化制作工艺，提高了生产良率。
附图说明
图1是本发明第一实施方式提供的一种发光二极管封装结构示意图。
图2是本发明第二实施方式提供的一种发光二极管封装结构示意图。
图3是本发明提供的一种发光二极管封装结构的制造方法流程图。
图4至图8是本发明提供的发光二极管封装结构的制造方法示意图。
主要元件符号说明
发光二极管封装结构    10，20
基板                  11，21
通孔                  111
侧面                  111a
第一表面              112
第二表面              113
支撑板                12，22
上表面                121
电极层                13
传导部                131
反射部                132
连接部                133
发光二极管芯片        14
金属导线              141
封装层        15
间隔          16
收容室        17
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图1，本发明的第一实施方式提供一种发光二极管封装结构10，其包括一基板11、若干支撑板12、一电极层13、若干发光二极管芯片14和一封装层15。
请参阅图4，该基板11呈板体状，基板11上形成有通孔111，所述基板包括相对的第一表面112和第二表面113。所述基板11用于支撑所述发光二极管封装结构10。所述通孔111由倾斜的侧面111a围成，从基板11的第一表面112向下贯穿所述基板11的第二表面113。所述基板11的材料为双马来酰亚胺三嗪树脂(Bismaleimide Triazine resin，BT resin)或环氧玻璃布。所述基板11的厚度约为60～300微米。
所述支撑板12分别设置于基板11的第二表面113，且正对所述通孔111的底部设置。所述支撑板12与所述基板11固定连接。所述支撑板12通常由金属材料，如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金制成。优选的，所述支撑板12的材料为导热性能良好的铜。所述支撑板12的厚度约为35～150微米。所述支撑板分别盖住对应通孔111的底端，支撑板12的上表面121与基板11的第二表面113相互贴设，从而每一支撑板12与基板11共同形成一收容发光二极管芯片14在内的收容室17。该收容室17的横截面呈梯形，支撑板12用于支撑位于对应通孔111内的发光二极管芯片14。如图2所示，在本发明其他的实施例中，可增大固定于所述基板21底部的所述支撑板22的面积和厚度，从而可以得到更好的散热效果，并使得所述发光二极管封装结构20的强度更高，稳定性更好。
电极层13镀在所述基板11的表面、围设于通孔111周围的侧面111a和金属支撑板12的上表面121上。所述电极层13包括传导部131、反射部132和连接部133三个部分。所述传导部131从所述基板11的第一表面112延伸到所述第二表面113，可作为电极与外部电连接。所述反射部132位于所述通孔111的侧面111a上，用于反射所述发光二极管芯片14发出的光线。所述连接部133位于两相邻的通孔之间，镀于所述基板11的第一表面上，用于将两相邻的发光二极管芯片14电连接，形成串联结构。各所述传导部131和各所述连接部133之间形成间隔16，所述间隔16使得传导部与连接部之间相互之间电绝缘。所述电极层13所用的材料为导电性能较好的金属材料，如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。优选的，所述电极层13的材料为银。
发光二极管芯片14分别位于所述通孔111内，并通过粘着胶固定于所述通孔111底部的支撑板12上表面121的电极层13上。所述发光二极管芯片14通过金属导线141与所述电极层13的传导部131和连接部133电性连接。所述基板11的厚度略大于或等于所述发光二极管芯片14的厚度。
封装层15形成于所述基板11和所述支撑板12上，覆盖所述发光二极管芯片14和金属导线141。所述封装层15的材质可以为硅胶(silicone)、环氧树脂(epoxy resin)或二者的组合物。所述封装层15还可以包含荧光转换材料，该萤光转换材料可以为石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉和氮化物基荧光粉。所述封装层15可以保护发光二极管芯片14免受灰尘、水气等影响。
请参阅图3至图8，本发明实施方式提供的一种发光二极管封装结构的制造方法包括以下步骤。
步骤S301：请参阅图4，提供一基板11，所述基板11上形成有通孔111。所述基板11包括相对的第一表面112和第二表面113。所述通孔111由倾斜的侧面111a围成，底部贯穿所述基板11。所述基板11的材料为双马来酰亚胺三嗪树脂，基板11的厚度大致为200微米。具体实施时，所述基板11的材料可选自石墨、硅、陶瓷、类钻、环氧树脂、硅烷氧树脂或环氧玻璃布等，所述基板11的厚度可为60～300微米之间。
步骤S302：请参阅图5，将支撑板12设置于通孔111底部，所述支撑板12与所述基板11固定连接，每一支撑板12与基板11共同形成一收容发光二极管芯片14在内的收容室17。所述支撑板12的材料为导热性能良好的铜，支撑板12的厚度大致为50微米。具体实施时，所述支撑板12的厚度为35～150微米之间，所述金属支撑板12所用的材料为金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。
步骤S303：请参阅图6，在所述基板11和支撑板12的表面镀电极层13。所述电极层13包括传导部131、反射部132和连接部133三个部分。所述传导部131从所述基板11的第一表面112延伸到所述第二表面113，可作为电极与外部电连接。所述反射部132位于收容室17内，反射部132覆盖于该基板11围设形成的所述通孔111的侧面111a上及支撑板12的上表面121上，用于反射所述发光二极管芯片14发出的光线。所述连接部133位于两相邻的通孔111之间，镀于所述基板11上，用于将两相邻的发光二极管芯片14电连接，形成串联结构。所述传导部131和所述连接部133之间形成间隔16，两者电绝缘。所述电极层13的材料为银。具体实施时，所述电极层13所用的材料可为金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。
步骤S304：请参阅图7，通过粘着胶将所述发光二极管芯片14固定于所述通孔111底部的支撑板12上表面121的电极层13上。所述发光二极管芯片14通过金属导线141与所述电极层13的传导部131和连接部133电性连接。所述基板11的厚度与所述发光二极管芯片14的厚度大致相等。
步骤S305：请参阅图8，在所述基板11和所述支撑板12上形成封装层15，覆盖所述发光二极管芯片14和金属导线141。所述封装层15的材质为硅胶(silicone resin)。所述封装层15可以保护发光二极管芯片14免受灰尘、水气等影响。
通过以上步骤，即可形成所述发光二极管封装结构10。
本发明实施方式提供的发光二极管封装结构中，由于所述基板上形成通孔，并于通孔的底端设置支撑板，发光二极管芯片设置于所述通孔内并贴设于支撑板上。通过设置支撑板支撑位于对应通孔内的发光二极管芯片，并在基板表面及支撑板表面镀设电极层用于导电并起到反射光线的作用，使得整个封装结构很薄，且结构简单，并简化制作工艺，提高了生产良率。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (3)

1.一种发光二极管封装结构的制造方法，包括以下步骤：
提供基板，所述基板上形成有贯穿的通孔；
提供支撑板，将支撑板设置于通孔的一侧并与基板固定连接；
在基板和支撑板的表面上形成电极层；
将发光二极管芯片置于通孔内并贴设于所述通孔一侧的支撑板上，并通过金属导线将发光二极管芯片与所述电极层电性连接；
形成一封装层，覆盖所述发光二极管芯片和金属导线，得到发光二极管封装结构。
2.如权利要求1所述的发光二极管封装结构的制造方法，其特征在于：所述支撑板、发光二极管芯片及通孔的数量均为多个，所述支撑板分别正对通孔设置，每一支撑板与基板围设形成收容发光二极管芯片在内的一收容室。
3.如权利要求2所述的发光二极管封装结构的制造方法，其特征在于：该电极层包括传导部、反射部和连接部，该反射部位于收容室内，所述传导部和连接部之间电绝缘，所述发光二极管芯片之间通过所述连接部串联连接。
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