KR970054985A - 기울어진 공진기로 편광특성이 제어된 표면방출 레이저다이오드 제조방법 - Google Patents

기울어진 공진기로 편광특성이 제어된 표면방출 레이저다이오드 제조방법 Download PDF

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KR970054985A
KR970054985A KR1019950053677A KR19950053677A KR970054985A KR 970054985 A KR970054985 A KR 970054985A KR 1019950053677 A KR1019950053677 A KR 1019950053677A KR 19950053677 A KR19950053677 A KR 19950053677A KR 970054985 A KR970054985 A KR 970054985A
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laser diode
pattern
manufacturing
etching
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KR0178492B1 (ko
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추혜용
유병수
박효훈
박민수
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양승택
한국전자통신연구원
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Priority to US08/641,531 priority patent/US5712188A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18352—Mesa with inclined sidewall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/099—LED, multicolor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Abstract

본 발명은 수직공진형 표면방출 레어저다이오드의 제작방법에 관한 것으로, 편광특성을 제어하기 위해 공진층을 〈110〉 또는 〈110〉방향으로 5°-45°의 각도를 갖도록 형성함을 특징으로 한다.

Description

기울어진 공진기로 편광특성이 제어된 표면방출 레어지다이오드 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 내지 제1B도는 본 발명의 제1실시예에 의한 하부 방출 레이저다이오드의 제조공정을 나타낸 단면도.

Claims (7)

  1. 기울어진 공진기로 편광특성이 제어된 표면방출 레이저다이오드의 제조방법에 있어서, 공진기를 〈110〉 또는 〈110〉방향으로 5°-45°의 각도를 기울여 형성함을 특징으로 하는 레이저다이오드의 제조방법.
  2. 기울어진 공진기로 편광특성이 제어된 표면방출 레어저다이오드의 제조방법에 있어서, GaAs기판(1)상에 하부 거울층(2), 활성층(3) 및 상부 거울층(4)을 차례로 형성하는 공정과, 상기 상부 거울층(4)상에 식각 마스크용 물질로서 금속층을 형성하고 이를 사진식각법으로 패터닝하여 금속 마스크 패턴(6)을 형성하는 공정과, 상기 금속 마스크패턴(6)을 그의 하부 형성물질에 대한 식각마스크로 이용하여 노출된 상부 거울층(4)과 활성층(3)을 〈110〉 또는 〈110〉방향으로 5°-45°의 각도로 기울여 식각하는 공정을 포함하는 것을 특징으로 하는 레이저다이오드의 제조방법.
  3. 제2항에 있어서, 상기 금속 마스크패턴(6)은 1000 내지 5000A 두께를 갖는 Au와 500 내지 2000A의 두께를 갖는 Ni를 증착한 금속층으로 형성됨을 특징으로 하는 레이저다이오드의 제조방법.
  4. 제2항에 있어서, 상기 금속층 패턴(6)을 마스크로 하여 상부 거울층(4) 및 활성층(3)을 반응성 이온식각 또는 이온 빔 식각법으로 식각하는 것을 특징으로 하는 레이저다이오드의 제조방법.
  5. 기울어진 공진기로 편광특성이 제어된 표면방출 레어저다이오드의 제조방법에 있어서, GaAs기판(1)상에 하부 거울층(2), 활성층(3) 및 상부 거울층(4) 및 보호막(7)을 형성하는 공정과, 상기 보호막(7) 상에 포토레지스트를 형성한 후 이를 노광 및 현상화여 소정의 폭을 갖는 포레지스터 패턴(8)을 형성하는 공정과, 상기 포토레지스트 패턴(8)을 식각마스크로서 이용하여 노출된 보호막(7)을 패터닝하는 공정과, 상기 보호막(7)을 통해 노출된 상부 거울층(4)을 〈110〉 또는 〈110〉방향으로 5°-45°의 각도로 소정의 깊이 까지 식각하는 공정과, 상기 포토레지스트 패턴(8)과 보호막 패턴(7)을 이온주입 마스크로 하여 불순물을 주입하여 활성층(3)에 이온 주입영역(9)을 형성하는 공정을 포함하는 것을 특징으로 하는 레이저다이오드의 제조방법.
  6. 제5항에 있어서, 상기 상부 거울층(4)의 삭각공정시 식각되는 부분이 활성층(3)의 표면에 소정의 두께로 잔류 하여 전류 주입을 위한 전극을 형성할 수 있도록 하는 레이저 다이오드의 제조방법.
  7. 제5항에 있어서, 이온 주입영역(9)은 프로톤(proton) 또는 보론(boron)등의 전기적 도핑없이 최대 결정 손상이 발생하는 깊이가 활성층(3)바로 위 또는 활성층(3) 내에 들어가도록 하며, 이온주입 농도는 결정손상에 의해 절연 효과를 줄 수 있는 농도로 불순물을 주입하여 형성함을 특징으로 하는 레이저다이오드의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950053677A 1995-12-21 1995-12-21 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법 KR0178492B1 (ko)

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KR1019950053677A KR0178492B1 (ko) 1995-12-21 1995-12-21 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
US08/641,531 US5712188A (en) 1995-12-21 1996-05-01 Fabrication method of polarization-controlled surface-emitting laser diode using tilted-cavity
JP8112656A JP3002420B2 (ja) 1995-12-21 1996-05-07 傾いた共振器で偏光特性が制御された面発光レーザダイオードの製造方法

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US5712188A (en) 1998-01-27
JPH09181391A (ja) 1997-07-11
KR0178492B1 (ko) 1999-04-15
JP3002420B2 (ja) 2000-01-24

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