KR970053089A - Method of manufacturing transistor of semiconductor device - Google Patents

Method of manufacturing transistor of semiconductor device Download PDF

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Publication number
KR970053089A
KR970053089A KR1019950066117A KR19950066117A KR970053089A KR 970053089 A KR970053089 A KR 970053089A KR 1019950066117 A KR1019950066117 A KR 1019950066117A KR 19950066117 A KR19950066117 A KR 19950066117A KR 970053089 A KR970053089 A KR 970053089A
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KR
South Korea
Prior art keywords
photoresist
semiconductor device
etching
forming
polysilicon layer
Prior art date
Application number
KR1019950066117A
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Korean (ko)
Inventor
황충호
Original Assignee
김주용
현대전자산업주식회사
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950066117A priority Critical patent/KR970053089A/en
Publication of KR970053089A publication Critical patent/KR970053089A/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로서, 특히 폴리실리콘층 상부에 형성된 감강막 패턴 형성후, 감강막 패턴을 제거하지 않고 전체 상부에 소정두께의 감광막을 증착한 후, 감광막 에치백 공정을 적용하여 역 T형 게이트를 별도의 마스크 공정없이 제조하게 함으로써 공정의 단순화 및 소자의 신뢰성을 향상시킬 수 있는 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device. In particular, after the formation of the photoresist pattern formed on the polysilicon layer, the photoresist having a predetermined thickness is deposited without removing the photoresist pattern, and then the photoresist etchback process is performed. The present invention relates to a method of fabricating a transistor of a semiconductor device, which can simplify the process and improve device reliability by applying an inverse T-type gate without a separate mask process.

Description

반도체 소자의 트랜지스터 제조방법Transistor manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제6도는 본 발명에 따른 반도체 소자의 트랜지스터 제조공정단계를 도시한 단면도.6 is a sectional view showing a transistor manufacturing process step of the semiconductor device according to the present invention.

Claims (5)

실리콘 기판상에 소정두께의 게이트 폴리실리콘을 증착하는 단계와, 상기 폴리실리콘층 상부에 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 이용하여 하부의 폴리실리콘층을 소정두께 식각하여 두께의 일부를 남기는 단계와 전체구조 상부에 감광막을 도포한 후 감광막 에치 백 공정을 실시하는 단계와, 노출된 폴리실리콘층을 건식식각으로 식각하는 단계와, 상부의 감광막 패턴을 제거하는 단계와, LDD 구조 형성을 위한 이온 주입공정을 실시하는 단계와, 전체구조 상부에 스페이서 형성 산화막을 형성한 후 식각하여 게이트의 양측벽에 스페이서를 형성하는 단계와, 상기 스페이서에 의해 노출된 하부 실리콘 기판 상부에 소오스/드레인 전극 형성을 위한 불순물 이온주입을 실시하는 단계로 구성되는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.Depositing a gate polysilicon having a predetermined thickness on the silicon substrate, forming a photoresist pattern on the polysilicon layer, and etching a predetermined thickness of the lower polysilicon layer using the photoresist pattern to form a part of the thickness. Leaving and applying a photoresist film on top of the entire structure, performing a photoresist etch back process, etching the exposed polysilicon layer by dry etching, removing the upper photoresist pattern, and forming LDD structure Performing an ion implantation process, forming a spacer forming oxide film over the entire structure, and then etching the spacer to form spacers on both sidewalls of the gate; and source / drain electrodes on the lower silicon substrate exposed by the spacers. A semiconductor device comprising a step of performing impurity ion implantation for formation Register method. 제1항에 있어서, 상기 감광막 에치백 공정으로 마스크의 CD값을 크게하는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of manufacturing a transistor of a semiconductor device according to claim 1, wherein the CD value of the mask is increased by said photoresist etch back process. 제2항에 있어서, 상기 마스크의 CD값 증가는 중심부로부터 좌우 양측이 대칭적으로 이루어지는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of claim 2, wherein the CD value of the mask is increased symmetrically from both the center and the left and right sides of the mask. 제1항에 있어서, 상기 감광막 에치 백 공정시 건식식각으로 실시하는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of claim 1, wherein the photoresist film is etched back through dry etching. 제1항에 있어서, 상기 게이트의 형상은 역 T형상으로 된 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of claim 1, wherein the gate has an inverted T shape. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950066117A 1995-12-29 1995-12-29 Method of manufacturing transistor of semiconductor device KR970053089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950066117A KR970053089A (en) 1995-12-29 1995-12-29 Method of manufacturing transistor of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950066117A KR970053089A (en) 1995-12-29 1995-12-29 Method of manufacturing transistor of semiconductor device

Publications (1)

Publication Number Publication Date
KR970053089A true KR970053089A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950066117A KR970053089A (en) 1995-12-29 1995-12-29 Method of manufacturing transistor of semiconductor device

Country Status (1)

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KR (1) KR970053089A (en)

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