KR970054379A - Manufacturing method of LDD MOS device - Google Patents
Manufacturing method of LDD MOS device Download PDFInfo
- Publication number
- KR970054379A KR970054379A KR1019950047588A KR19950047588A KR970054379A KR 970054379 A KR970054379 A KR 970054379A KR 1019950047588 A KR1019950047588 A KR 1019950047588A KR 19950047588 A KR19950047588 A KR 19950047588A KR 970054379 A KR970054379 A KR 970054379A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive layer
- etching
- forming
- silicon substrate
- photoresist pattern
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 등방성 플라즈마 애싱(Isotropic plasma ashing)을 이용한 엘디디(LDD) 모스(MOS) 소자의 제조방법에 관한 것으로서, 한 번의 사진 공정으로 소오스, 드레인 영역 및 LDD영역을 형성함으로써 스페이서를 침적하고 식각함에 따른 공정 단가 상승을 해결하고, 소오스 및 드레인 영역이 도전층의 식각 단계에서 산화막에 의해 보호되도록 함으로써 이 부분의 표면 손상을 방지할 수 있으며, 따라서 전체적인 공정이 선행 기술에 비해 간단한 LDD MOS소자의 제조방법을 제공하고자 한 것이다.The present invention relates to a method for manufacturing an LDD MOS device using isotropic plasma ashing, in which a spacer is deposited and etched by forming a source, a drain region, and an LDD region in a single photographic process. In order to solve the process cost increase and to ensure that the source and drain regions are protected by the oxide film in the etching step of the conductive layer, it is possible to prevent the surface damage of this part. It is to provide a manufacturing method.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 LDD MOS 소자의 형성 과정을 도시한 공정도.2 is a process chart showing the formation process of the LDD MOS device according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950047588A KR970054379A (en) | 1995-12-07 | 1995-12-07 | Manufacturing method of LDD MOS device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950047588A KR970054379A (en) | 1995-12-07 | 1995-12-07 | Manufacturing method of LDD MOS device |
Publications (1)
Publication Number | Publication Date |
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KR970054379A true KR970054379A (en) | 1997-07-31 |
Family
ID=66593048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950047588A KR970054379A (en) | 1995-12-07 | 1995-12-07 | Manufacturing method of LDD MOS device |
Country Status (1)
Country | Link |
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KR (1) | KR970054379A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100469909B1 (en) * | 2002-07-15 | 2005-02-02 | 주식회사 하이닉스반도체 | Method for resizing photoresist pattern |
KR100571315B1 (en) * | 1998-06-11 | 2006-08-30 | 삼성전자주식회사 | Constructing method for lightly doped drain structure of semiconductor device |
-
1995
- 1995-12-07 KR KR1019950047588A patent/KR970054379A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100571315B1 (en) * | 1998-06-11 | 2006-08-30 | 삼성전자주식회사 | Constructing method for lightly doped drain structure of semiconductor device |
KR100469909B1 (en) * | 2002-07-15 | 2005-02-02 | 주식회사 하이닉스반도체 | Method for resizing photoresist pattern |
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E601 | Decision to refuse application |