KR970025702A - 다금속 산화물 - Google Patents
다금속 산화물 Download PDFInfo
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- KR970025702A KR970025702A KR1019960054200A KR19960054200A KR970025702A KR 970025702 A KR970025702 A KR 970025702A KR 1019960054200 A KR1019960054200 A KR 1019960054200A KR 19960054200 A KR19960054200 A KR 19960054200A KR 970025702 A KR970025702 A KR 970025702A
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- South Korea
- Prior art keywords
- multimetal oxide
- oxide
- formula
- multimetal
- finely divided
- Prior art date
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- 229910052715 tantalum Inorganic materials 0.000 claims abstract 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 10
- 229910052758 niobium Inorganic materials 0.000 claims abstract 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract 7
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 7
- 239000003054 catalyst Substances 0.000 claims abstract 5
- 230000003197 catalytic effect Effects 0.000 claims abstract 5
- 230000003647 oxidation Effects 0.000 claims abstract 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract 3
- 150000002894 organic compounds Chemical class 0.000 claims abstract 3
- 238000000634 powder X-ray diffraction Methods 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 229910016523 CuKa Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 19
- 239000000463 material Substances 0.000 claims 10
- 239000012071 phase Substances 0.000 claims 10
- 239000000126 substance Substances 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 239000008187 granular material Substances 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 claims 4
- 239000011149 active material Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 238000004898 kneading Methods 0.000 claims 4
- 238000001354 calcination Methods 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 239000003570 air Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 239000000843 powder Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 239000007858 starting material Substances 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims 1
- 239000005695 Ammonium acetate Substances 0.000 claims 1
- 238000002441 X-ray diffraction Methods 0.000 claims 1
- 239000012080 ambient air Substances 0.000 claims 1
- 229940043376 ammonium acetate Drugs 0.000 claims 1
- 235000019257 ammonium acetate Nutrition 0.000 claims 1
- QGAVSDVURUSLQK-UHFFFAOYSA-N ammonium heptamolybdate Chemical compound N.N.N.N.N.N.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.[Mo].[Mo].[Mo].[Mo].[Mo].[Mo].[Mo] QGAVSDVURUSLQK-UHFFFAOYSA-N 0.000 claims 1
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 claims 1
- IKUPISAYGBGQDT-UHFFFAOYSA-N copper;dioxido(dioxo)molybdenum Chemical compound [Cu+2].[O-][Mo]([O-])(=O)=O IKUPISAYGBGQDT-UHFFFAOYSA-N 0.000 claims 1
- XAYGUHUYDMLJJV-UHFFFAOYSA-Z decaazanium;dioxido(dioxo)tungsten;hydron;trioxotungsten Chemical compound [H+].[H+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O XAYGUHUYDMLJJV-UHFFFAOYSA-Z 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 238000001694 spray drying Methods 0.000 claims 1
- 238000003756 stirring Methods 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
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Abstract
Mo, V 및 W, Nb, Ti, Zr, Hf, Ta, Cr, Si 및 Ge중 적어도 1종의 원소를 함유하고 특정한 3차원 원자 배열을 갖는 다금속 산화물은 유기 화합물의 촉매적 기상 산화반응을 위한 촉매로서 사용된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 다금속 산화물 MI1의 CuKa X선 분말 회절 스펙트럼.
Claims (29)
- CuKa 방사선(λ=1.54178Å)을 사용하여 얻은 3차원 원자 배열이 5 내지 50° 범위의 2θ에서 적어도 하기 특성 회절선 A1,A3,A5,A9및 A10를 갖고 많아야 하기 회절선 A1내지 A10을 갖는 X선 분말 회절 스펙트럼(회절된 재선의 강도 A를 회절각의 2배(2θ)의 함수로 플롯함)을 나타내는, 하기 화학식(I)의 다금속 산화물.식 중, M1은 W 및 (또는)Nb이고, M2는 Ti, Zr, Hf, Ta, Cr, Si 및 (또는) Ge이며, a는 0.1 내지 6이고, b는 0 내지 6이며, c는 0 내지 6이고, 단 a+b+c는 0.1 내지 6이며, x는 화학식(I)에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이다.
- 제1항에 있어서, 회절선 A1내지 A10이 하기 상대적 너비(IA rel[%])를 갖는 것인 다금속 산화물.
- 제1항 또는 제2항에 있어서, CuKa X선 분말 회절 스펙트럼은 반값폭(2θ 단위)이 0.25° 미만인 고도 분리된 회절선을 갖지 않는 것인 다금속 산화물.
- 헵타몰리브덴산암모늄 수화물(MoO3함량:81.8 중량%, 이상적 조성:(NH4)6Mo7O24·4H2O)33.746kg, 메타바나듐산암모늄(V2O5함량:76.5 중량%, 이상적 조성:NH4VO3) 6.576kg, 파라텅스텐산암모늄 수화물(WO3함량:89.0중량%, 이상적 조성:(NH4)10W12O41·7H2O)) 5.764kg, 및 아세트산암모늄(CH3COONH4함량:97.0중량%, 이상적 조성:CH3COONH4) 7.033kg을 교반시키면서 순서대로 90℃의 물 250ℓ에 용해시키고, 생성된 황색 내지 오렌지색 용액을 80℃로 냉각시키고 300℃의 유입 온도 및 110℃의 유출 온도에서 분무 건조시키고; 수득된 분무 분말 800g을 유효 용적이 2.5ℓ인 혼련기(LUK 2.5형, 독일 7000 스투트가르트 소재의 Werner and Pfleiderer 제)를 사용하여 1시간 동안 혼련시키면서 물 250g을 첨가하고(물 250g 중에서 180g은 혼련한지 처음 10분 이내에 첨가하고 70g은 나머지 50분간의 혼련 중에 첨가함), 수득된 습윤 흙덩어리상 혼련 생성물을 110℃에서 15시간 동안 건조시킨 후 메쉬 크기가 5mm인 체에 거르로; 수득된 과립 100g을 등온 가열된 석영구 용적이 1ℓ이고 회전 속도가 12회 전/분인 수평 회전식 로(爐)중에서 다음과 같은 하소 조건하에서 하소시키고; 〔하소조건:1단계:사용되는 과립을 50분 이내에 25에서 275℃로 연속 가열하고; 2단계:사용되는 30분 이내에 275에서 325℃로 연속 가열하고; 3단계; 사용되는 과립을 4시간 동안 325℃로 유지시키고; 4단계:사용되는 과립을 30분 이내에 325에서 400℃로 연속 가열하고; 5단계:사용되는 과립을 10분간 400℃로 유지시킴. 각 하소 단계 동안, 하기 조성(표준 온도 및 압력 조건(S.T.P), 1기압, 25℃)을 갖는 기체 혼합물을 회전식 로의 내부를 통해 회전축에 평행하게 흘린다.1단계, 2단계 및 3단계:공기 3.6ℓ(S.T.P.)/h, NH31.5ℓ(S.T.P.)/h, 및 N244.9ℓ(S.T.P.)/h(총 기체 유량:50ℓ(S.T.P)/h); 4단계, 5단계 및 냉각상:공기 3.6ℓ(S.T.P.)/h, 및 N244.9ℓ(S.T.P.)/h(총 기체 유량:48.5ℓ(S.T.P.)/h)] 회전식 로의 외부 가열을 끄고, 외부로부터 주위 공기를 취입시켜 로를 냉각시키고, 사용된 과립을 5시간 동안 25℃로 냉각시켜서 얻을 수 있는 다금속 산화물 Mo8.54V2.47W0.99O33.35의 3차원 원자 배열에 상응하는 3차원 원자 배열을 갖는 하기 화학식(I)의 다금속 산화물.식 중, M1은 W 및 (또는)Nb이고, M2는 Ti,Zr,Hf,Ta,Cr,Si 및 (또는) Ge이며, a는 0.1 내지 6이고, b는 0 내지 6이며, c는 0 내지 6이고, 단 a+b+c는 0.1 내지 6이며, x는 화학식(I)에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이다.
- 제1항에 있어서, a가 0.5 내지 4.5인 다금속 산화물.
- 제1항에 있어서, b가 0.1 내지 6인 다금속 산화물.
- 제1항에 있어서, b가 0.5 내지 4인 다금속 산화물.
- 제1항에 있어서, c가 0.1 내지 6인 다금속 산화물.
- 제1항에 있어서, c가 0.5 내지 4인 다금속 산화물.
- 제1항에 있어서, a+b+c가 0.5 내지 4.5인 다금속 산화물.
- 제1항에 있어서, x가 15 내지 50인 다금속 산화물.
- 제1항에 있어서, x가 25 내지 40인 다금속 산화물.
- 제1항에 있어서, x가 30 내지 40인 다금속 산화물.
- 제1항에 있어서, c가 0이고 M1이 오로지 W이며 함유된 바나듐의 25%이상이 V4+로서 존재하는 다금속 산화물.
- 활성 재료가 제1항에 청구된 다금속 산화물인 촉매를 사용하는 것이 특징으로 하는 유기 화합물의 촉매적 기상 산화 방법.
- 제15항에 있어서, 아크롤레인의 아크릴산으로의 촉매적 기상 산화 방법.
- 활성 재료가 제1항에 청구된 다금속 산화물로 이루어지는 것인 촉매.
- Mo, V, 및 W, Nb, Ti, Zr, Hf, Ta, Cr, Si 및 Ge중 적어도 1종을 함유하는 다금속 산화물 재료를 제조하기 위한 출발 화합물로서의 제1항에 청구된 다금속 산화물의 사용 방법.
- 출발 화합물로서 제1항에 청구된 적어도 1종의 다금속 산화물을 사용하는 Mo, V, 및 W, Nb, Ti, Zr, Hf, Ta, Cr, Si 및 Ge중 적어도 1종을 함유하는 다금속 산화물 재료의 제조 방법.
- 제1항에 청구된 화학식 (I)의 미분된 다금속 산화물 및 하기 화학식(II)의 미분된 다금속 산화물을 함유하는 미분 혼합물.식 중, M3는 Mo, W, V, Nb 또는 Ta이고, d는 4 내지 30이며, e는 0 내지 20이고, y는 화학식(II)에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이다.
- 그의 국소적 환경과 상이한 화학적 조성에 의해 그의 국소적 환경에 대해 한계설정(限界說定)되며 화학 조성식이 Mo12-a-b-cVaM1 bM2 cOx인 3차원 영역 A형태의 성분[A]p와, 그의 국소적 환경과 상이한 화학적 조성에 의해 그의 국소적 환경에 대해 한계설정되며 화학 조성식이 M3 12CudHeOy인 3차원 영역 B형태의 성분[B]q를 함유하고 상기 영역 A 및 영역 B는 미분된 A 및 미분된 B의 혼합물에서와 같이 상호 분포되어 있으며 CuKα 방사선(λ=1.54178 Å)을 사용하여 얻은 영역 A의 3차원 원자 배열이 5 내지 50° 범위의 2θ에서 적어도 하기 특성 회절선 A1, A3, A5, A9및 A10를 갖고 많아야 하기 회절선 A1내지 A10을 갖는 X선 분말 회절 스펙트럼(회절된 X선의 강도를 회절각의 2배(2θ)의 함수로 플롯함)을 나타내는, 적어도 2개의 상을 갖는 하기 화학식(III)의 다금속 산화물 재료.식 중, A는(Mo12-a-b-cVaM1 bM2 cOx)x(활성상이)이고, B는 M3 12CudHeOy(프로모터상)이며, M1은 W 또는 Nb이고, M2는 Ti,Zr,Hf,Ta,Cr,Si 및 또는 Ge이며, a는 0.1 내지 6이고, b는 0 내지 6이며, c는 0 내지 6이고, 단 a+b+c는 0.1 내지 6이며, x는 성분A에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이고, M3는 Mo, W, V, Nb 또는 Ta이며, d는 4 내지 30이며, e는 0 내지 20이고, y는 성분(B)에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이고, p 및 q는 0이외의 수로서, p/q의 비율은 160:1 내지 1:1이다.
- 그의 국소적 환경과 상이한 화학적 조성에 의해 그의 국소적 환경에 대해 한계설정되며 화학 조성식이(Mo12-a-b-cVaM1 bM2 cOx인 3차원 영역 A형태의 성분[A]p와, 그의 국소적 환경과 상이한 화학적 조성에 의해 그의 국소적 환경에 대해 한계 설정되며 화학 조성식이 M3 12CudHeOy인 3차원 영역 B형태의 성분[B]q를 함유하고 상기 영역 A 및 영역 B는 미분된 A 및 미분된 B의 혼합물에서와 같이 상호 분포되어 있으며 영역 A의 3차원 원자 배열이 제4항에 청구된 다금속 산화물의 것과 같은, 적어도 2개의 상을 갖는 하기 화학식(III)의 다금속 산화물 재료.식 중, A는 (Mo12-a-b-cVaM1 bM2 cOx)×(활성상이)이고, B는 M3 12CudHeOy(프로모터상)이며, M1은 W 또는 Nb이고, M2는 Ti,Zr,Hf,Ta,Cr,Si 및 또는 Ge이며, a는 0.1 내지 6이고, b는 0 내지 6이며, c는 0 내지 6이고, 단 a+b+c는 0.1 내지 6이며, x는 성분A에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이고, M3는 Mo, W, V, Nb 또는 Ta이고, d는 4 내지 30이며 e는 0 내지 20이며, y는 성분 B에서 산소 이외의 원소들의 원자가 및 진동수에 의해 결정되는 수이고, p 및 q는 0이외의 수로서, p/q의 비율은 160:1 내지 1:1이다.
- 제21항 또는 제22항에 있어서, 영역 B가 하기 표 1(괄호는 관련된 X선 회절지문의 발줴 문헌을 나타냄)에 기재된 적어도 1종의 몰리브덴산구리의 구조형을 갖는 다금속 산화물 재료.
- 제21항에 있어서, 영역 A 및 B는 최대 직경이 0보다 크고 300μm이하인 다금속 산화물 재료.
- 제21항에 있어서, 영역 A 및 B는 최대 직경이 1 내지 30μm인 다금속 산화물 재료.
- 제1항에 청구된 적어도 1종의 미분된 다금속 산화물(I) 및 하기 화학식(II)을 갖는 적어도 1종의 미분된 다금속 산화물을 각각 별도로 미리 제조하고, 별도로 미리 제조한 미분된 다금속 산화물(I) 및(II)를 혼합하여 완전한 건조 혼합물을 제조하고 이것을 성형하는 것을 특징으로 하는, 활성 재료로서 제21항에 청구된 다금속 산화물 재료를 함유하는 촉매의 제조 방법.식 중, M3는 Mo, W, V, Nb 또는 Ta이고, d는 4 내지 30이며, e는 0 내지 20이고, y는 화학식(II)에서 산소 이외의 원소득의 원자가 및 진동수에 의해 결정되는 수이다.
- 활성 재료가 제21항에 청구된 다금속 산화물 재료인 촉매를 사용하는 것을 특징으로 하는 유기 화합물의 촉매적 기상 산화 방법.
- 제27항에 있어서, 아크롤레인의 아크릴 산으로의 촉매적 기상 산화 방법.
- 제1항에 청구된 다금속 산화물(I)을 최대 직경이 0보다 크고 300μm이하인 미분된 균질 분포 형태로 함유하는 상들을 갖는 다상(multiphase)다합속 산화물 재료.※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
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CN106881098B (zh) * | 2015-12-15 | 2019-08-09 | 上海华谊新材料有限公司 | 复合氧化物催化剂及其制备方法和用途 |
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-
1995
- 1995-11-16 DE DE19542755A patent/DE19542755A1/de not_active Withdrawn
-
1996
- 1996-11-05 US US08/744,246 patent/US5807531A/en not_active Expired - Fee Related
- 1996-11-07 ES ES96117834T patent/ES2143702T3/es not_active Expired - Lifetime
- 1996-11-07 EP EP96117834A patent/EP0774297B1/de not_active Expired - Lifetime
- 1996-11-07 DE DE59604408T patent/DE59604408D1/de not_active Expired - Fee Related
- 1996-11-12 CA CA002190171A patent/CA2190171A1/en not_active Abandoned
- 1996-11-14 MX MX9605566A patent/MX9605566A/es not_active Application Discontinuation
- 1996-11-14 SG SG1996011112A patent/SG69990A1/en unknown
- 1996-11-15 ID IDP963350A patent/ID16006A/id unknown
- 1996-11-15 CZ CZ963362A patent/CZ336296A3/cs unknown
- 1996-11-15 KR KR1019960054200A patent/KR970025702A/ko not_active Application Discontinuation
- 1996-11-15 CN CNB011244747A patent/CN1177763C/zh not_active Expired - Fee Related
- 1996-11-15 MY MYPI96004750A patent/MY132599A/en unknown
- 1996-11-15 CN CN96114492A patent/CN1081486C/zh not_active Expired - Fee Related
- 1996-11-18 JP JP30644296A patent/JP4068679B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-05 US US09/092,181 patent/US6084126A/en not_active Expired - Fee Related
-
2000
- 2000-01-27 US US09/492,226 patent/US6184173B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MX9605566A (es) | 1997-05-31 |
JP4068679B2 (ja) | 2008-03-26 |
EP0774297B1 (de) | 2000-02-09 |
JPH09194213A (ja) | 1997-07-29 |
CN1394812A (zh) | 2003-02-05 |
US5807531A (en) | 1998-09-15 |
CN1177763C (zh) | 2004-12-01 |
US6084126A (en) | 2000-07-04 |
MY132599A (en) | 2007-10-31 |
DE19542755A1 (de) | 1997-05-22 |
EP0774297A1 (de) | 1997-05-21 |
CN1081486C (zh) | 2002-03-27 |
ID16006A (id) | 1997-08-28 |
CZ336296A3 (en) | 1997-08-13 |
CN1153079A (zh) | 1997-07-02 |
US6184173B1 (en) | 2001-02-06 |
ES2143702T3 (es) | 2000-05-16 |
CA2190171A1 (en) | 1997-05-17 |
SG69990A1 (en) | 2000-01-25 |
DE59604408D1 (de) | 2000-03-16 |
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