KR970024253A - 박막압전소자 및 박막압전소자의 제조방법(film bulk acoustic wave device and producing method of the same) - Google Patents

박막압전소자 및 박막압전소자의 제조방법(film bulk acoustic wave device and producing method of the same) Download PDF

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Publication number
KR970024253A
KR970024253A KR1019960021966A KR19960021966A KR970024253A KR 970024253 A KR970024253 A KR 970024253A KR 1019960021966 A KR1019960021966 A KR 1019960021966A KR 19960021966 A KR19960021966 A KR 19960021966A KR 970024253 A KR970024253 A KR 970024253A
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thin film
piezoelectric ceramic
conductor layer
ceramic thin
semiconductor substrate
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KR1019960021966A
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KR100225815B1 (ko
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슈소 와다까
고이찌로 미스
쯔또무 나가쯔까
고모노리 기무라
슌뻬이 가메야마
찌사꼬 마에다
아끼라 야마다
도시히사 혼다
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기따오까 다까시
미쓰비시덴키 주식회사
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Publication of KR970024253A publication Critical patent/KR970024253A/ko
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Publication of KR100225815B1 publication Critical patent/KR100225815B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/545—Filters comprising resonators of piezoelectric or electrostrictive material including active elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

음파를 사용한 공진기, 필터 등의 압전소자 및 압전소자를 이용하는 전자장치에 관한 것으로써, 적은 비용으로 박막압전소자의 특성을 조정할 수 있고 불필요한 공진점 및 손실을 저감시키는 압전소자를 제공하고, 동일한 반도체기판 상에 다른 전기회로와 일체화해서 제조된 소형 경량이며, 무조정으로 사용 가능한 전기장치를 제공하기 위해 반도체기판, 반도체기판 상에 탑재된 두께가 있는 하지도체층, 하지도체층에 탑재된 두께가 있는 압전 세라믹 박막 및압전 세라믹스 박막 상에 탑재된 도전성전극 패턴을 포함하고, 압전 세라믹스 박막의 두께는 하지도체층의 두께의 10배 이상인 박막압전소자가 마련한다.
이것에 의해, 반도체회로의 영역을 작게 할 수 있어 반도체회로의 제조비용을 저감할 수 있고, 압전소자의 제조공정을 제어하는 것에 의해, 콘덴서를 소형화하고 제조비용을 저감할 수 있고, 효과적인 분극처리를 실현할 수 있고, 압전박막두께의 제조오차에 의해 발생한 공진 주파수의 변화를 전기적으로 조정하는 것이 가능하므로, 특성이 양호한 박막압전소자를 얻을 수 있다.

Description

박막압전소자 및 박막압전소자의 제조방법(FILM BULK ACOUSTIC WAVE DEVICE AND PRODUCING METHOD OF THE SAME)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예1의 벌크초음파공진기의 상면도.

Claims (6)

  1. 반도체기판, 상기 반도체기판 상에 탑재된 두께가 있는 하지도체층, 상기 하지도체층에 탑재된 두께가 있는 압전 세라믹 박막 및 상기 압전 세라믹스 박막 상에 탑재된 도전성전극 패턴을 포함하고, 상기 압전 세라믹스 박막의 두께는 하지도체층의 두께의 10배 이상인 박막압전소자.
  2. 반도체기판, 상기 반도체기판 상에 탑재된 하지도체층, 상기 하지도체층에 탑재된 두께가 있는 압전 세라믹 박막 및 상기 압전 세라믹스 박막 상에 탑재된 도전성 전극패턴을 포함하고, 상기 압전 세라믹스 박막은 압전세라믹스 박막의 표면과 평행한 방향으로 전파되는 음파를 발생하고, 그 음파의 파구는 2/압전 세라믹스 박막의 두께 이하인 박막압전소자.
  3. 반도체 기판 상에 탑재된 하지도체층, 상기 하지도체층에 탑재된 압전세라믹 박막, 상기 압전 세라믹 박막상에 탑재된 도통성전극 패턴 및 상기 반도체기판 상에 탑재된 반도체회로를 포함하고, 상기 반도체회로는 상기 압전 세라믹 박막의 일부를 사용해서 구성되는 박막압전소자.
  4. 반도체 기판, 상기 반도체기판 상에 탑재된 하지도체층, 상기 하지도체층에 탑재된 압전 세라믹 박막 및 상기 압전 세라믹 박막에 탑재된 도전성 전극패턴을 포함하고, 상기 압전 세라믹 박막은 분극처리가 실행된 압전체부와 분극처리.
  5. 반도체기판, 상기 반도체기판 상에 탑재된 하지도체층, 상기 하지도체층에 탑재된 압전 세라믹 박막, 상기 압전 세라믹 박막에 탑재된 도전성 전극패턴, 상기 반도체기판 상에 탑재된 반도체회로, 상기 압전 세라믹 박막의 분극처리에 사용하는 분극회로 및 상기 분극회로에 의한 분극처리 상기 반도체회로를 보호하는 보호회로를 포함하는 박막압전소자.
  6. 반도체기판, 상기반도체기판 상에 탑재된 하지도체층, 상기 하지도체층에 탑재된 압전 세라믹 박막, 상기 압전 세라믹 박막에 탑재된 도전성 전극패턴, 상기 반도체기판 상에 탑재된 여러개의 리액턴스 소자 및 상기 여러개의 리액턴스 소자의 각각의 전기적 접속 변경수단을 포함하는 박막압전소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960021966A 1995-10-27 1996-06-18 박막압전소자 및 박막압전소자의 제조방법 KR100225815B1 (ko)

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JP95-280628 1995-10-27
JP28062895A JP3371050B2 (ja) 1995-10-27 1995-10-27 薄膜圧電素子

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Also Published As

Publication number Publication date
DE69623094T2 (de) 2003-10-09
KR100225815B1 (ko) 1999-10-15
EP0771070A3 (en) 1997-07-02
EP0771070B1 (en) 2002-08-21
JPH09130200A (ja) 1997-05-16
EP0771070A2 (en) 1997-05-02
DE69623094D1 (de) 2002-09-26
JP3371050B2 (ja) 2003-01-27

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