DE69623094D1 - Dünnfilmanordnung mit akustischen Volumenwellen - Google Patents

Dünnfilmanordnung mit akustischen Volumenwellen

Info

Publication number
DE69623094D1
DE69623094D1 DE69623094T DE69623094T DE69623094D1 DE 69623094 D1 DE69623094 D1 DE 69623094D1 DE 69623094 T DE69623094 T DE 69623094T DE 69623094 T DE69623094 T DE 69623094T DE 69623094 D1 DE69623094 D1 DE 69623094D1
Authority
DE
Germany
Prior art keywords
thin film
acoustic waves
bulk acoustic
film arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69623094T
Other languages
English (en)
Other versions
DE69623094T2 (de
Inventor
Shusou Wadaka
Koichiro Misu
Tsutomu Nagatsuka
Tomonori Kimura
Shunpei Kameyama
Chisako Maeda
Akira Yamada
Toshihisa Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69623094D1 publication Critical patent/DE69623094D1/de
Publication of DE69623094T2 publication Critical patent/DE69623094T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/545—Filters comprising resonators of piezoelectric or electrostrictive material including active elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE1996623094 1995-10-27 1996-01-22 Dünnfilmanordnung mit akustischen Volumenwellen Expired - Fee Related DE69623094T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28062895A JP3371050B2 (ja) 1995-10-27 1995-10-27 薄膜圧電素子

Publications (2)

Publication Number Publication Date
DE69623094D1 true DE69623094D1 (de) 2002-09-26
DE69623094T2 DE69623094T2 (de) 2003-10-09

Family

ID=17627704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1996623094 Expired - Fee Related DE69623094T2 (de) 1995-10-27 1996-01-22 Dünnfilmanordnung mit akustischen Volumenwellen

Country Status (4)

Country Link
EP (1) EP0771070B1 (de)
JP (1) JP3371050B2 (de)
KR (1) KR100225815B1 (de)
DE (1) DE69623094T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1171382C (zh) * 1998-01-16 2004-10-13 三菱电机株式会社 薄膜压电元件
US6081171A (en) * 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
US6060818A (en) * 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
JP2000209063A (ja) 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
JP3531522B2 (ja) 1999-04-19 2004-05-31 株式会社村田製作所 圧電共振子
KR100506534B1 (ko) * 2000-01-31 2005-08-05 긴세키 가부시키가이샤 압전진동자를 사용한 발진회로용 용기, 그 제조방법 및발진기
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
GB0012439D0 (en) 2000-05-24 2000-07-12 Univ Cranfield Improvements to filters
GB0012437D0 (en) 2000-05-24 2000-07-12 Univ Cranfield Improvements to filters
GB0014630D0 (en) * 2000-06-16 2000-08-09 Koninkl Philips Electronics Nv Bulk accoustic wave filter
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
KR100865652B1 (ko) * 2001-05-11 2008-10-29 우베 고산 가부시키가이샤 압전 박막 공진자
JP3953315B2 (ja) * 2001-12-26 2007-08-08 宇部興産株式会社 窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子
US6662419B2 (en) * 2001-12-17 2003-12-16 Intel Corporation Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
JP2005033775A (ja) * 2003-06-18 2005-02-03 Matsushita Electric Ind Co Ltd 電子部品及びその製造方法
US7486003B1 (en) * 2005-09-22 2009-02-03 Sei-Joo Jang Polymer bulk acoustic resonator
US7567024B2 (en) * 2007-09-26 2009-07-28 Maxim Integrated Products, Inc. Methods of contacting the top layer of a BAW resonator
US8512800B2 (en) 2007-12-04 2013-08-20 Triquint Semiconductor, Inc. Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters
US7768364B2 (en) 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes
JP5286016B2 (ja) * 2008-10-03 2013-09-11 京セラ株式会社 フィルタおよびデュプレクサ、ならびにフィルタの製造方法
DE102008052222B4 (de) * 2008-10-17 2019-01-10 Snaptrack, Inc. Antennen Duplexer mit hoher GPS-Unterdrückung
US8704191B2 (en) 2010-01-20 2014-04-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Film bulk acoustic wave resonator-based high energy radiation detectors and methods using the same
CN103985949B (zh) * 2014-05-15 2016-03-09 中国电子科技集团公司第二十六研究所 高频体声波延迟线换能器制备方法及高频体声波延迟线
EP3185413B1 (de) * 2015-12-23 2019-12-04 Nokia Technologies Oy Oszillatorvorrichtung und zugehörige verfahren
CN113644895B (zh) * 2021-06-30 2024-02-23 中国电子科技集团公司第十三研究所 薄膜体声波谐振器滤波器及滤波器组件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877920U (ja) * 1981-11-20 1983-05-26 日本特殊陶業株式会社 圧電共振器
US4640756A (en) * 1983-10-25 1987-02-03 The United States Of America As Represented By The United States Department Of Energy Method of making a piezoelectric shear wave resonator
DE3922977A1 (de) * 1989-07-12 1991-01-24 Texas Instruments Deutschland Trimmschaltung und unter verwendung einer solchen trimmschaltung ausfuehrbares abgleichverfahren
JPH03151705A (ja) * 1989-11-08 1991-06-27 Murata Mfg Co Ltd 圧電振動素子
JP2643620B2 (ja) * 1991-03-13 1997-08-20 松下電器産業株式会社 電圧制御発振器とその製造方法
US5260596A (en) * 1991-04-08 1993-11-09 Motorola, Inc. Monolithic circuit with integrated bulk structure resonator
EP0526048B1 (de) * 1991-07-18 1997-11-12 Ngk Insulators, Ltd. Piezoelektrischer/elektrostriktiver Element mit einem keramischen Substrat aus stabilisiertem Zirkoniumdioxid
JP3125454B2 (ja) * 1992-07-07 2001-01-15 株式会社村田製作所 ３端子型圧電共振子
US5446335A (en) * 1993-02-19 1995-08-29 Murata Mfg. Co., Ltd. Piezoresonator with a built-in capacitor and a manufacturing method thereof

Also Published As

Publication number Publication date
DE69623094T2 (de) 2003-10-09
KR100225815B1 (ko) 1999-10-15
EP0771070A3 (de) 1997-07-02
EP0771070B1 (de) 2002-08-21
JPH09130200A (ja) 1997-05-16
KR970024253A (ko) 1997-05-30
EP0771070A2 (de) 1997-05-02
JP3371050B2 (ja) 2003-01-27

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee