KR970019725A - 수광(受光)장치 및 이를 사용한 전기기기 - Google Patents

수광(受光)장치 및 이를 사용한 전기기기 Download PDF

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Publication number
KR970019725A
KR970019725A KR1019960033411A KR19960033411A KR970019725A KR 970019725 A KR970019725 A KR 970019725A KR 1019960033411 A KR1019960033411 A KR 1019960033411A KR 19960033411 A KR19960033411 A KR 19960033411A KR 970019725 A KR970019725 A KR 970019725A
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South Korea
Prior art keywords
light receiving
semiconductor chip
light
receiving device
signal processing
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KR1019960033411A
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KR100391067B1 (ko
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요오수케 야마모토
타다요시 오가와
신지 야노
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사토 켄이치로
로무 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q9/00—Arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station, in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야
본 발명은 리모트콘트롤을 사용하는 전기기기의 수광장치의 구성에 관한 것이다.
2. 발명이 해결하려고 하는 기술적과제
수광장치의 외부로부터의 노이즈에 의한 착오신호를 방지하기 위한 금속케이스로 씨일드할 필요없이 소형이면서도 고감도의 리모콘수광장치를 제공하는 것을 과제로 한다.
3. 발명의 해결방법의 요지
데이터전송을 광(光)에 의해서 행하는 통신장치의, 광을 받아서 신호처리를 하는 수광장치에 있어서, 제1의 제조조건에 의해서 형성한 수광소자(21)(포토다이오드)및 그 출력파형을 성형하기 위한 버퍼(buffer)회로로된 수광용도반도체칩(11)과, 제2의 제조조건에 의해서 형성되어 수광용반도체칩으로 부터의 전압을 받아서 디지털데이터를 발생하는 신호처리용반도체칩(12)로 구성되며, 상기의 수광용반도체칩(11)과 신호처리용반도체칩을 하나의 팩케이지(13)에 수납하도록 한다.
4. 발명의 중요한 용도
리모콘을 사용하는 전기기기에 있어서, 수광장치의 소형화와 노이즈의 방해를 해소하고 고감도의 수광장치를 제조할 수 있다.

Description

수광(受光)장치 및 이를 사용한 전기기기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시형태를 나타내는 구성도,
제2도는 본 발명의 수광용반도체칩의 구체적인 회로를 나타내는 구성도,
제3도는 본 발명의 제조조건과 수광감도의 관계를 표시하는 설명도.

Claims (4)

  1. 데이터전송을 광(光)에 의해서 행하는 통신장치의, 광을 받아서 신호처리하는 수광장치(10)에 있어서, 제1의 제조조건으로 형성한 수광소자 및 그 출력전압파형을 성형하기 위한 버퍼(buffer)회로로된 수광용반도체칩(11)과, 제2의 제조조건으로 형성한 상기의 수광용반도체칩(11)로부터의 출력전압을 받아서 디지털데이터를 발생하는 신호처리용반도체칩(12)로 구성되며, 상기의 수광용반도체칩(11)과 신호처리용반도체칩(12)을 하나의 픽케이지(13)에 수납한 것을 특징으로 하는 수광장치.
  2. 제1항에 있어서, 제1의 제조조건의 상기한 수광용반도체칩(11)은 수광소자의 수광감도향상을 우선으로한 불순물농도로된 반도체기판을 사용하여 형성되며, 제2의 제조조건의 상기 신호처리용반도체칩(12)는 제1의 제조조건의 불순물농도보다 높고 고집적화를 우선으로한 불순물농도로된 반도체기판을 사용하여 형성되어 있는 것을 특징으로한 수광장치.
  3. 제1항 또는 제2항에 있어서, 상기의 수광소자는 포토-다이오드(21)이며, 상기의 수광장치(10)은 적외선을 사용한 리모트콘트롤송신장치의 수광장치인 것을 특징으로 하는 수광장치.
  4. 제1항 내지 제3항에 기재한 수광장치를 사용한 것을 특징으로 하는 전기기기.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960033411A 1995-09-12 1996-08-12 수광( 受光 )장치 및 이를 사용한 전기기기 KR100391067B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-234372 1995-09-12
JP7234372A JPH0982989A (ja) 1995-09-12 1995-09-12 受光装置及びこれを用いた電気機器

Publications (2)

Publication Number Publication Date
KR970019725A true KR970019725A (ko) 1997-04-30
KR100391067B1 KR100391067B1 (ko) 2003-09-19

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KR1019960033411A KR100391067B1 (ko) 1995-09-12 1996-08-12 수광( 受光 )장치 및 이를 사용한 전기기기

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US (2) US5811867A (ko)
JP (1) JPH0982989A (ko)
KR (1) KR100391067B1 (ko)
CN (1) CN1138357C (ko)
TW (1) TW357463B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment
JP4086860B2 (ja) * 2005-05-23 2008-05-14 三洋電機株式会社 半導体装置
US9372351B1 (en) * 2012-05-31 2016-06-21 Maxim Integrated Products, Inc. Circuits for active eyewear

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847210A (en) * 1988-08-05 1989-07-11 Motorola Inc. Integrated pin photo-detector method
US5598022A (en) * 1990-08-31 1997-01-28 Hamamatsu Photonics K.K. Optical semiconductor device
US5291054A (en) * 1991-06-24 1994-03-01 Sanyo Electric Co., Ltd. Light receiving module for converting light signal to electric signal
US5986317A (en) * 1995-09-29 1999-11-16 Infineon Technologies Corporation Optical semiconductor device having plural encapsulating layers

Also Published As

Publication number Publication date
US5811867A (en) 1998-09-22
US6198146B1 (en) 2001-03-06
JPH0982989A (ja) 1997-03-28
KR100391067B1 (ko) 2003-09-19
TW357463B (en) 1999-05-01
CN1138357C (zh) 2004-02-11
CN1155194A (zh) 1997-07-23

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