KR970009974B1 - 반도체 장치의 제조방법 - Google Patents

반도체 장치의 제조방법 Download PDF

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Publication number
KR970009974B1
KR970009974B1 KR1019930032280A KR930032280A KR970009974B1 KR 970009974 B1 KR970009974 B1 KR 970009974B1 KR 1019930032280 A KR1019930032280 A KR 1019930032280A KR 930032280 A KR930032280 A KR 930032280A KR 970009974 B1 KR970009974 B1 KR 970009974B1
Authority
KR
South Korea
Prior art keywords
layer
hto
pattern
heat treatment
wsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930032280A
Other languages
English (en)
Korean (ko)
Other versions
KR950021193A (ko
Inventor
이래인
박문한
김영욱
오관영
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019930032280A priority Critical patent/KR970009974B1/ko
Priority to JP33895494A priority patent/JP3652392B2/ja
Priority to TW083112299A priority patent/TW262567B/zh
Publication of KR950021193A publication Critical patent/KR950021193A/ko
Priority to US08/611,432 priority patent/US5674782A/en
Application granted granted Critical
Publication of KR970009974B1 publication Critical patent/KR970009974B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019930032280A 1993-12-31 1993-12-31 반도체 장치의 제조방법 Expired - Lifetime KR970009974B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019930032280A KR970009974B1 (ko) 1993-12-31 1993-12-31 반도체 장치의 제조방법
JP33895494A JP3652392B2 (ja) 1993-12-31 1994-12-28 半導体装置の製造方法
TW083112299A TW262567B (enExample) 1993-12-31 1994-12-28
US08/611,432 US5674782A (en) 1993-12-31 1996-03-04 Method for efficiently removing by-products produced in dry-etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930032280A KR970009974B1 (ko) 1993-12-31 1993-12-31 반도체 장치의 제조방법

Publications (2)

Publication Number Publication Date
KR950021193A KR950021193A (ko) 1995-07-26
KR970009974B1 true KR970009974B1 (ko) 1997-06-19

Family

ID=19375146

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930032280A Expired - Lifetime KR970009974B1 (ko) 1993-12-31 1993-12-31 반도체 장치의 제조방법

Country Status (3)

Country Link
JP (1) JP3652392B2 (enExample)
KR (1) KR970009974B1 (enExample)
TW (1) TW262567B (enExample)

Also Published As

Publication number Publication date
TW262567B (enExample) 1995-11-11
JP3652392B2 (ja) 2005-05-25
KR950021193A (ko) 1995-07-26
JPH07254602A (ja) 1995-10-03

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