KR970009671B1 - 분산된 궤환 레이저 다이오드 회절격자 제조방법 - Google Patents
분산된 궤환 레이저 다이오드 회절격자 제조방법 Download PDFInfo
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- KR970009671B1 KR970009671B1 KR1019940006855A KR19940006855A KR970009671B1 KR 970009671 B1 KR970009671 B1 KR 970009671B1 KR 1019940006855 A KR1019940006855 A KR 1019940006855A KR 19940006855 A KR19940006855 A KR 19940006855A KR 970009671 B1 KR970009671 B1 KR 970009671B1
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- South Korea
- Prior art keywords
- diffraction grating
- laser diode
- manufacturing
- semiconductor substrate
- compound semiconductor
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 208000012868 Overgrowth Diseases 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
Description
Claims (2)
- 계면의 특성이 우수한 분산된 궤환 레이저 다이오드(Distributed Feed-Back Laser Diode) 회절격자 제조 방법에 있어서, 화합물 반도체 기판(21)상에 이후에 형성되는 회절격자의 예정된 격자주기(A) 만큼의 간격을 가지고 배열되는 감광막 패턴(22)을 레이저광의 간섭무늬를 이용해서 형성하는 단계 ; 상기 감광막 패턴(22)을 식각장벽으로 화합물 반도체 기판(21)을 식각하는 단계 ; 전체구조 상부에 유기 금속 화학 기상 증착(MOCVD ; Metal Organic Chamical Vapor Deposition) 법을 이용, 과도성장하여 결정면이 원자레벨로 경면(Mirror)이 되게 과도성장막(24)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 분산된 궤환 레이저 다이오드 회절격자 제조방법.
- 선택 재성장으로 계면의 특성이 우수한 분산된 궤환 레이저 다이오드 회절격자 제조방법에 있어서, 화합물 반도체 기판(31)상에 이후에 형성되는 회절격자의 예정된 격자주기(A)만큼의 간격을 가지고 배열되는 마스크 패턴(32)을 형성하는 단계 ; 노출된 화합물 반도체 기판(31)상에 유기 금속 화학 기상 증착법을 이용하여 에피택셜막(33)을 형성하는 단계 ; 상기 에피택셜막(33)상에 유기 금속 화학 기상 증착법을 이용, 과도성장하여 평턴한 과도성장막(34)을 형성하는 단계 ; 상기 마스크 패턴(32)을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 분산된 궤환 레이저 다이오드 회절격자 제조방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940006855A KR970009671B1 (ko) | 1994-03-31 | 1994-03-31 | 분산된 궤환 레이저 다이오드 회절격자 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940006855A KR970009671B1 (ko) | 1994-03-31 | 1994-03-31 | 분산된 궤환 레이저 다이오드 회절격자 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970009671B1 true KR970009671B1 (ko) | 1997-06-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940006855A KR970009671B1 (ko) | 1994-03-31 | 1994-03-31 | 분산된 궤환 레이저 다이오드 회절격자 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970009671B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101141269B1 (ko) * | 2008-12-26 | 2012-05-04 | 한국광기술원 | 발광 다이오드 및 이의 제조 방법 |
-
1994
- 1994-03-31 KR KR1019940006855A patent/KR970009671B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101141269B1 (ko) * | 2008-12-26 | 2012-05-04 | 한국광기술원 | 발광 다이오드 및 이의 제조 방법 |
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