KR970004494B1 - 밀착형 이미지센서의 제조방법 - Google Patents
밀착형 이미지센서의 제조방법 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000001464 adherent effect Effects 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000000969 carrier Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
요약 없음
Description
제1도는 종래의 밀착이미지 센서 단면도.
제2도는 본 발명의 밀착 이미지 센서 단면도.
*도면의 주요부분에 대한 부호의 설명*
1, 15 : 소오스2, 17 : 드레인
3, 14 : 알루미늄금속전극4 : 크롬전극
5, 13 : ITO(투명도전막)11 : 진성비정질Sic : H층
본 발명은 밀착형 이미지센서에 관한 것으로, 특히 높은 광/암 전류비와 빠른 어드레싱에 적당하도록한 a-Si : H/a-Sic : H 이종 접합구조의 폴리 Si TFT를 갖는 밀착형 이미지 센서의 제조방법에 관한 것이다.
종래 밀착형 이미지센서는 제1도에서 보는 바와 같이 유리기판(G)위에 포토다이오드부분(A)과 어드렝싱 TFT부분(B)으로 구성되어 있다. 그 제조방법은 유리기판(G)위에 크롬전극(4)을 패터닝하고 a-SiNX: H즉, 비정질질화막(7)증착후 패터닝하고 a-Si : H(비결정실리콘)(6)을 증착한다. 포토다이오드부분(A)은 ITO(5)층과 알루미늄금속전극(3)을 연이어 형성하고, TFT부분(B)은 N+-a-Si : H(8) 증착후 소오스(1), 드레인(2) 용으로 알루미늄 증착후 패터닝한후, n±a-Si : H층(8)을 애칭한다.
종래센서의 작용은 포토다이오드부분(A)의 전극사이에 역바이어스를 인가하면 수광소자인 포토다이오드는 P-N 접합의 역방향 바이어스가 걸려 광을 수집하여 전기적신호로 변환한후 이를 저장하는 콘덴서 역할을 하게된다.
이때 전하의 전송의 비정질실리콘을 통하여 포토다이오드로부터 TFT전송되며 TFT는 이를 어드레싱(addressing)하게 된다.
종래 밀착형 이미지센서의 광수집부분은 높은 암전류(dark current)를 가지며 이는 광/암 전류비를 낮게(104또는 그이하)갖게되고, 또한 비정질 실리콘 TFT부분은 전송된 캐리어의 늦은 어드레싱을 하게 된다.
본 발명은 상기 문제점을 감안하여 이루어지는 것으로 그 목적은 높은 광/암 전류비와 빠른 어드레싱에 적당하도록 a-Si : H/a-SiC : H이종 접합구조의 폴리-Si TFT를 갖느 밀착형 이미지센서의 제조방법을 제공하는 것이다.
본 발명의 목적에 따라 형성된 그 단면형상은 제2도에 도시된 바와 같다. 제2도를 참조하여 그 형성방법을 이하에 상세히 기술한다.
본 발명의 이미지센서는 먼저, 저압 CVD 즉 LPCVD법으로 폴리-Si막(17)을 석영유리기판(G)상의 어드레싱 TFT영역(D)에 증착패터닝하고 이 위의 SiO2(23)는 열산화법으로 형성시킨다. 또한 이위에 형성되는 폴리 Si게이트전극(18)도 LPCVD를 이용하여 형성시키고 이온주입법으로 소스(15)와 드레인(17)을 만든다.
한편 포토다이오드는 제2도의 포토다이오드 형성영역(C)상에 형성되는 것으로 SiO2층(23)상에 ITO(13) 증착패턴닝한 상태에서 PECVD장비로 3개의 이종구조를 이루도록 연속증착하는데 이는 p형 비정질 SiC : H(12), 진성비정질 SiC : H층(11), n형 비정질 SiC : H층(10)이 그것이다. 이어서 A1(14)을 증착시켜 패터닝하여 윗층 전극을 형성하여 본 발명의 밀착형 이미지센서를 제조한다.
본 발명의 밀착형 이미지센서는 포토다이오드 부분에서 광을 수집하며 포토다이오드 부분의 전극에 역바이어스를 인가하면 이 부분은 P-n접합에 역바이어스가 걸린것과 유사하게 작용한다. 수집된 광신호는 전기적신호로 변화되고 이에 의한 전하는 비정질 실리콘층을 어드레싱용 폴리 Si TFT에 전송된다.
포토다이오드는 높은 광/암 전류비(105)를 갖는데, 이는 P형 비정질 SiC : H층과 전극사이 n형 비정질 SiC : H층과 전극사이에 전위장벽이 형성되어 전극으로부터 발생되는 캐리어들은 장벽에 의해 블록킹된다. 이러한 이유로 낮은 암전류가 흐르게 되며 전극은 비정질실리콘 막에서만 생성되는 광자캐리어들을 수집하게 된다.
본 발명에서는 어드레싱부로 사용되는 TFT는 수수화(hydrogenahon)된 폴리 Si TFT로서 폴리 Si 그레인(grain)경계와 폴리 Si/SiO2계면의 트랩밀도를 감소시킨다. 또한 종래의 비정질 실로콘 TFT의 전자, 정공 이동도보다 휠씬 높은 이동도를 가지으로써 빠른 어드레싱이 가능하다.
a-Si/a-SiC : H의 포토다이오드 부분은 P형 a-SiC : H, n형 a-SiC : H와 전극사이에 전위방벽에 형성되어 전극으로부터 발생되는 캐리어들을 차단하고, 전극은 오직 비정질 실리콘막에서 생성되는 광자캐리어들을 수집하게 된다.
따라서 낮은 암전류가 흐르며 높은 광/암 전류비(약 105이상)을 가지며 종래의 것보다 높은 열적 안정성을 지닌다.
Claims (1)
- 밀착형 이미지 센서 제조방법에 있어서, 유리기판(G)의 어드레싱 TFT 영역(D)상에 폴리 -Si막(17), SiO2층(23), 폴리 Si 게이트 전극(18) 및 소스(15)와 드레인(16)을 증착 형성하며, 상기 유리기판(G)의 포토다이오드 영역(C)상에 SiO2층(23), ITO막(13)을 형성하고, 3개의 이종구조인 P형 비정질 SiC : H(12), 진성비정질 SiC : H층(11), n형 비정질 S-C : H층(10)을 형성하며, 상기 형성체 상에 A1(14)을 증착 패터닝하여 전극을 형성하는 밀착이미지 센서 제조방법.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890009245A KR970004494B1 (ko) | 1989-06-30 | 1989-06-30 | 밀착형 이미지센서의 제조방법 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890009245A KR970004494B1 (ko) | 1989-06-30 | 1989-06-30 | 밀착형 이미지센서의 제조방법 |
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| Publication Number | Publication Date |
|---|---|
| KR910002014A KR910002014A (ko) | 1991-01-31 |
| KR970004494B1 true KR970004494B1 (ko) | 1997-03-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7687836B2 (en) | 2007-05-24 | 2010-03-30 | Micron Technology, Inc. | Capacitance noise shielding plane for imager sensor devices |
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| KR102233026B1 (ko) | 2019-05-30 | 2021-03-30 | 주식회사 덴티스 | 부하 저감 3d 프린터의 동작방법 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7687836B2 (en) | 2007-05-24 | 2010-03-30 | Micron Technology, Inc. | Capacitance noise shielding plane for imager sensor devices |
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| KR910002014A (ko) | 1991-01-31 |
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