KR960043004A - 진공 처리 장치 세정 방법 - Google Patents

진공 처리 장치 세정 방법 Download PDF

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KR960043004A
KR960043004A KR1019960018106A KR19960018106A KR960043004A KR 960043004 A KR960043004 A KR 960043004A KR 1019960018106 A KR1019960018106 A KR 1019960018106A KR 19960018106 A KR19960018106 A KR 19960018106A KR 960043004 A KR960043004 A KR 960043004A
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gas
gas containing
group
processing apparatus
component
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KR1019960018106A
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히로시 오가와
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가네코 히사시
닛폰 덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

진공 처리 장치의 세정 방법에 따라서, 반도체 기판상에 형성되며 레지스트 패턴에 의해 커버된 알루미늄 막은 진공 처리 장치의 처리실에서 염소기를 함유하는 가스에 의해 에칭되고 그후에 산소기를 함유하는 가스, 플루오르기를 함유하는 가스와 염소기를 함유하는 가스로 구성되는 혼합가스의 희석된 가스의 플라즈마가 처리실에서 발생되어 잔존 반응 생성물을 제거한다.

Description

진공 처리 장치 세정 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시에 및 관련 기술을 설명하는 에칭장치의 단면도.

Claims (9)

  1. 진공 처리 장치 세정 방법에 있어서, 진공 처리 장치의 처리실내의 염소기를 함유하는 가스와 탄소 성분을 함유하는 레지스트 패턴에 의해 커버된 알루미늄 막을 에칭하는 단계와, 탄소와 반응하는 성분을 함유하는 가스, 알루미늄에 반응하는 성분을 함유하는 가스, 상기 처리실에서 촉매로 작용하는 성분을 함유하는 가스의 혼합 가스를 함유하는 공급가스의 플라즈마를 발생하는 단계를 구비하는 것을 특징으로 하는 진공 처리 장치 세정 방법.
  2. 제1항에 있어서, 상기 공급 가스는 희석 가스에 의해 희석되며, 상기 희석 가스대 상기 공급 가스의 혼합 비율은 10% 내지 80%범위인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  3. 제2항에 있어서, 상기 희석 가스는 희가스인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 탄소에 반응하는 성분을 함유하는 가스는 산소기를 함유하는 가스이고, 알루미늄에 반응하는 성분을 함유하는 가스는 염소기를 함유하는 가스이고, 촉매에 작용하는 성분을 함유하는 가스를 플루오르기를 함유하는 가스인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  5. 제4항에 있어서, 산소기를 함유하는 가스는 산소(O2), 오존(O3), 물(H2O), 과산화수소수(H2O2), 탄소산화물(COx), 황 산화물(SOx) 및 질소 산화물(NOx)로 구성되는 그룹으로부터 선택된 가스인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  6. 제4항에 있어서, 플루오르기를 함유하는 가스는 3플루오르화 질소(NF3), 6플루오르화 2탄소(C2F6), 4플루오르화 탄소(CF4) 및 6플루오르화 황(SF6)으로 구성되는 그룹으로부터 선택된 가스인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  7. 제4항에 있어서, 염소기를 함유하는 가스는 염소(Cl2), 3염화 붕소(BCl3), 4염화 실리콘(SiCl4) 및 4염화 탄소(CCl4)로 구성되는 그룹으로부터 선택된 가스인 것을 특징으로 하는 진공 처리 장치 세정 방법.
  8. 제4항에 있어서, 산소기를 함유하는 가스대 상기 혼합 가스의 비율은 40% 내지 60%범위에 있으며 염소기를 함유하는 가스대 상기 혼합 가스의 비율 보다 큰 것을 특징으로 하는 진공 처리 장치 세정 방법.
  9. 제3항에 있어서, 상기 희가스는 헬륨(He), 아르곤(Ar) 및 네온(Ne)으로 구성되는 그룹으로부터 선택된 것을 특징으로 하는 진공 처리 장치 세정 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960018106A 1995-05-24 1996-05-22 진공처리장치 세정방법 KR100221899B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-124890 1995-05-24
JP7124890A JPH08319586A (ja) 1995-05-24 1995-05-24 真空処理装置のクリーニング方法

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KR960043004A true KR960043004A (ko) 1996-12-21
KR100221899B1 KR100221899B1 (ko) 1999-09-15

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US5817578A (en) 1998-10-06
KR100221899B1 (ko) 1999-09-15
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JPH08319586A (ja) 1996-12-03
CN1054656C (zh) 2000-07-19

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