KR960030386A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR960030386A
KR960030386A KR1019960000776A KR19960000776A KR960030386A KR 960030386 A KR960030386 A KR 960030386A KR 1019960000776 A KR1019960000776 A KR 1019960000776A KR 19960000776 A KR19960000776 A KR 19960000776A KR 960030386 A KR960030386 A KR 960030386A
Authority
KR
South Korea
Prior art keywords
semiconductor device
oxide
range
weight ratio
substrate
Prior art date
Application number
KR1019960000776A
Other languages
English (en)
Other versions
KR100363054B1 (ko
Inventor
마사하루 니시우라
아키라 모로즈미
도미오 시미즈
가츠미 야마다
시게마사 사이토
Original Assignee
나카자토 요시히코
후지 덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나카자토 요시히코, 후지 덴키 가부시키가이샤 filed Critical 나카자토 요시히코
Publication of KR960030386A publication Critical patent/KR960030386A/ko
Application granted granted Critical
Publication of KR100363054B1 publication Critical patent/KR100363054B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • C04B35/119—Composites with zirconium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6264—Mixing media, e.g. organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/6342—Polyvinylacetals, e.g. polyvinylbutyral [PVB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229—Cerium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5463—Particle size distributions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)

Abstract

본 발명은 원료비가 염가인 산화 알루미늄 분말체를 주재료로 하여, 기계적 강도를 높이며, 응력 완화의 특수한 구조를 채용하지 않고서 기판 자체의 박형화에 의해서 방열성의 개선이 도모될 수 있도록 한 반도체 장치를 제공하는 것을 목적으로 하며, 그 구성은 파워 트랜지스터·모듈에 이용하는 CBC(Ceramic Bonding Cupper)기판(2)은 세라믹스 기판(2a)의 내면 및 외면에 박형의 동판(2b,2c)을 예컨대 다이렉트 본드·컷퍼법에 의해 직접 접합한 것으로서, 상면측의 동판(2c)에 회로 패턴이 형성되어 있다. 세라믹스 기판(2a)은 산화 알루미늄을 주성분으로 하여 이것에 산화지르코늄을 첨가하고, 또 참가제로서 산화이트륨, 산화칼슘, 산화마그네슘, 산화세륨중 어느 하나를 각각 0.1~2wt%, 0.02~0.5wt%, 0.02~0.4wt%, 0.02~0.5wt% 첨가한 고온 소성체이다. 산화 알루미늄 단일체의 세라믹스 기판과 비교하여 특히 휨 강도가 대폭 높아지고, 열전도율이 한층 더 향상된다. 기판 자체의 박형화가 가능하고 방열성에 뛰어난 반도체 장치를 얻을 수 있다.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 (a)는 본 발명의 실시예에 관한 반도체 장치를 도시하는 부분 평면도이고, (b)는 제3도 (a)의 A-A' 선에 따라서 절단한 상태를 도시하는 부분 단면도.

Claims (14)

  1. 리드 프레임을 갖는 절열수지제의 케이스 틀과, 상기 케이스 틀의 한쪽의 개구를 폐쇄하는 금속제의 방열 베이스와, 상기 방열 베이스의 내면에 고착되어 상기 리드 프레임의 내부 리드 선단에 접속되는 반도체 소자가 실장된 절열기판과, 상기 케이스 틀의 내부 공간에 충전되어 상기 절열 기판 및 상기 내부 리드를 침지하는 겔형 수지 말봉재와, 상기 케이스 틀의 다른쪽의 개구를 뚜껑으로 폐쇄하는 절열수지제의 뚜껑을 가지며, 상기 절열 기판이 절연성 세라믹 기판의 외면과 내면에 접합하여 맞붙인 박(箔)형의 동판으로 이루어진 반도체 장치에 있어서, 상기 절연성 세라믹 기판은 산화 알루미늄을 주성분으로 하여 산화지르코늄을 첨가하고, 이것에 산화이트륨, 산화칼슘, 산화마그네슘, 산화세륨으로 이루어지는 군(群)에서 선택된 1종류 이상의 첨가제를 첨가하여 제작된 세라믹 소성체로 이루어지는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 산화 알루미늄의 중량비가 70% 이상 100% 미만의 범위에, 상기 산화지르코늄의 중량비가 0%를 초과하여 30%까지의 범위에, 상기 선택된 첨가제의 총량의 중량비가 0.02% 이상 2% 이하의 범위에 있는 것을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, 상기 선택된 첨가제는 산화이트륨으로서, 그 중량비는 0.1% 이상 2% 이하의 범위인 것을 특징으로 하는 반도체 장치.
  4. 제2항에 있어서, 상기 선택된 첨가제는 산화칼슘으로서, 그 중량비는 0.02% 이상 0.5% 이하의 범위인 것을 특징으로 하는 반도체 장치.
  5. 제2항에 있어서, 상기 선택된 첨가제는 산화마그네슘으로서, 그 중량비는 0.02% 이상 0.4% 이하의 범위인 것을 특징으로 하는 반도체 장치
  6. 제2항에 있어서, 상기 선택된 첨가제는 산화세륨으로서, 그 중량비는 0.02% 이상 0.5% 이하의 범위인 것을 특징으로 하는 반도체 장치
  7. 제2항에 있어서, 적어도 상기 첨가제의 2종류가 첨가되어 있고, 그 총점가량의 mol%가 0.05% 이상 1.0% 이하의 범위에 있는 것을 특징으로 하는 반도체 장치
  8. 제3항 내지 제7항 중 어느 한 항에 있어서, 상기 산화 알루미늄의 중량비가 82% 이상 97% 이하의 범위이고, 상기 산화지르코늄의 중량비가 2.5% 이상 17.5% 이하의 범위인 것을 특징으로 하는 반도체 장치.
  9. 제1항 내지 제7항중 어느 한 항에 있어서, 상기 세라믹스 원료 분말체의 입자 직경은 0.5㎛ 이상 3㎛ 이하인 것을 특징으로 하는 반도체 장치.
  10. 제8항에 있어서, 상기 세라믹스 원료 분말체의 입자 직경은 0.5㎛ 이상 3㎛ 이하인 것을 특징으로 하는 반도체 장치.
  11. 제1항 내지 제7항중 어느 한 항에 있어서, 절연성 세라믹 기판의 외면과 내면에 박형의 동판을 접합하여 이루어지는 것을 특징으로 하는 반도체 장치.
  12. 제8항에 있어서, 절연성 세라믹 기판의 외면과 내면에 박형의 동판을 접합하여 이루어지는 것을 특징으로 하는 반도체 장치.
  13. 제9항에 있어서, 절연성 세라믹 기판의 외면과 내면에 박형의 동판을 접합하여 이루어지는 것을 특징으로 하는 반도체 장치.
  14. 제10항에 있어서, 절연성 세라믹 기판의 외면과 내면에 박형의 동판을 접합하여 이루어지는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000776A 1995-01-19 1996-01-17 반도체장치 KR100363054B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-006104 1995-01-19
JP07006104A JP3127754B2 (ja) 1995-01-19 1995-01-19 半導体装置

Publications (2)

Publication Number Publication Date
KR960030386A true KR960030386A (ko) 1996-08-17
KR100363054B1 KR100363054B1 (ko) 2003-02-05

Family

ID=11629203

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960000776A KR100363054B1 (ko) 1995-01-19 1996-01-17 반도체장치

Country Status (4)

Country Link
US (1) US5869890A (ko)
EP (1) EP0723292A3 (ko)
JP (1) JP3127754B2 (ko)
KR (1) KR100363054B1 (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19649798A1 (de) * 1996-12-02 1998-06-04 Abb Research Ltd Leistungshalbleitermodul
DE10062108B4 (de) * 2000-12-13 2010-04-15 Infineon Technologies Ag Leistungsmodul mit verbessertem transienten Wärmewiderstand
US6522859B1 (en) * 2001-10-16 2003-02-18 Xerox Corporation Fiber removal device
US6885562B2 (en) * 2001-12-28 2005-04-26 Medtronic Physio-Control Manufacturing Corporation Circuit package and method for making the same
US7754976B2 (en) 2002-04-15 2010-07-13 Hamilton Sundstrand Corporation Compact circuit carrier package
JP4057407B2 (ja) * 2002-12-12 2008-03-05 三菱電機株式会社 半導体パワーモジュール
JP4756165B2 (ja) * 2004-08-26 2011-08-24 Ｄｏｗａメタルテック株式会社 アルミニウム−セラミックス接合基板
US8120153B1 (en) 2005-09-16 2012-02-21 University Of Central Florida Research Foundation, Inc. High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module
JP2007165588A (ja) * 2005-12-14 2007-06-28 Omron Corp パワーモジュール構造及びこれを用いたソリッドステートリレー
US8253233B2 (en) * 2008-02-14 2012-08-28 Infineon Technologies Ag Module including a sintered joint bonding a semiconductor chip to a copper surface
HUE035758T2 (en) 2009-04-03 2018-05-28 Sumitomo Metal Smi Electronics Devices Inc Sintered ceramic and substrate containing semiconductor material
JP4766162B2 (ja) * 2009-08-06 2011-09-07 オムロン株式会社 パワーモジュール
US8776551B2 (en) * 2011-05-23 2014-07-15 Johns Manville Transverse row bushings having ceramic supports
JP2013032265A (ja) * 2011-07-01 2013-02-14 Maruwa Co Ltd 半導体装置用アルミナジルコニア焼結基板及びその製造方法
CN102956576B (zh) * 2011-08-29 2015-12-02 奇鋐科技股份有限公司 散热装置及其制造方法
TWI541488B (zh) * 2011-08-29 2016-07-11 奇鋐科技股份有限公司 散熱裝置及其製造方法
JP6009295B2 (ja) * 2012-09-21 2016-10-19 京セラクリスタルデバイス株式会社 水晶デバイス
JP2015224151A (ja) * 2014-05-27 2015-12-14 Ｎｇｋエレクトロデバイス株式会社 Ｃｕ／セラミック基板
US10037928B2 (en) * 2015-01-29 2018-07-31 Kyocera Corporation Circuit board and electronic device
JP6519305B2 (ja) * 2015-05-11 2019-05-29 富士電機株式会社 封止材用シリコーン樹脂組成物及び該組成物を用いたパワー半導体モジュール
JP7052426B2 (ja) * 2018-03-02 2022-04-12 富士電機株式会社 半導体装置および半導体装置の製造方法
KR102098829B1 (ko) * 2018-04-20 2020-04-09 나노팀 주식회사 고방열 탄소시트 및 이의 제조방법
EP3648156A1 (en) * 2018-11-02 2020-05-06 Infineon Technologies AG Semiconductor substrate
JP6602450B2 (ja) * 2018-12-11 2019-11-06 Ｎｇｋエレクトロデバイス株式会社 Ｃｕ／セラミック基板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2872273B2 (ja) * 1989-06-26 1999-03-17 三菱電機株式会社 セラミツク基板材料
DE4029066A1 (de) * 1990-09-13 1992-03-19 Friedrichsfeld Ag Keramischer formkoerper
JPH0590444A (ja) * 1991-09-26 1993-04-09 Toshiba Corp セラミツクス回路基板
JPH05166969A (ja) * 1991-10-14 1993-07-02 Fuji Electric Co Ltd 半導体装置
WO2004074210A1 (ja) * 1992-07-03 2004-09-02 Masanori Hirano セラミックス－金属複合体およびその製造方法
JP2883787B2 (ja) * 1993-07-20 1999-04-19 富士電機株式会社 パワー半導体装置用基板

Also Published As

Publication number Publication date
KR100363054B1 (ko) 2003-02-05
EP0723292A3 (en) 1997-07-30
JP3127754B2 (ja) 2001-01-29
JPH08195458A (ja) 1996-07-30
US5869890A (en) 1999-02-09
EP0723292A2 (en) 1996-07-24

Similar Documents

Publication Publication Date Title
KR960030386A (ko) 반도체 장치
US6257215B1 (en) Resin-sealed electronic apparatus for use in internal combustion engines
KR890001180A (ko) 세라믹 패키지
KR910008854A (ko) 전기 또는 전자회로의 성형에 사용되는 세라믹기판
JPS5471572A (en) Semiconductor device
KR900019207A (ko) 수지밀봉형 반도체장치
KR890003076A (ko) 전자기기 장치
EP1394857A3 (en) Semiconductor device
US5699232A (en) Power semiconductor module having a plastic housing a metal/ceramic multilayer substrate and terminals in a soft encapsulation
US11581230B2 (en) Power semiconductor module and a method for producing a power semiconductor module
US5675181A (en) Zirconia-added alumina substrate with direct bonding of copper
JP3176815B2 (ja) 半導体装置用基板
JPS59132155A (ja) 半導体装置用容器
US7768139B2 (en) Power semiconductor module
JP2000128654A5 (ko)
JPS54124678A (en) Lead frame
KR950020786A (ko) 내연기관용 점화장치
KR890017201A (ko) 질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지
US7078628B2 (en) Substrate for circuit wiring
JP3612238B2 (ja) 混成集積回路装置
JPH11238838A (ja) 混成集積回路装置
JP4496042B2 (ja) 電気素子冷却モジュール
EP4148789A1 (en) Power semiconductor modules
JP2000311972A (ja) 半導体装置
EP3624182B1 (en) Power semiconductor module arrangement, substrate arrangement, and method for producing the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20141103

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 14

EXPY Expiration of term