KR960030320A - 기판처리장치 - Google Patents

기판처리장치 Download PDF

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KR960030320A
KR960030320A KR1019960001800A KR19960001800A KR960030320A KR 960030320 A KR960030320 A KR 960030320A KR 1019960001800 A KR1019960001800 A KR 1019960001800A KR 19960001800 A KR19960001800 A KR 19960001800A KR 960030320 A KR960030320 A KR 960030320A
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exhaust
tank
exhaust pipe
processing apparatus
substrate
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KR100253134B1 (ko
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아츠히코 스다
사토히로 오카야마
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시바타 쇼타로
고쿠사이 덴키 가부시키가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096Flat-bed apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 내조와 외조를 가진 2조구조의 기판처리장치에 있어서 반응가스 등의 외조내로 흘러드는 것을 방지할 수 있는 기판처리장치에 관한 것으로, 본 발명은 외조(40)와 내조(30)를 구비하며, 내조(30)는 캐소드(120)와 애노드 (130)을 구비하고, 내조(30) 내에 반응가스도입관(28)을 연통한다. 애노드(130)는 기판재치대(35)와 애노드 히터(33)를 구비하며, 애노드 히터(33) 주변의 내조 하측벽(32)에, 배기구멍(49)을 기판재치대(35)를 둘러싸고 배설되어 있다. 애노드 히터(33)의 하부에는 배기조(37)를 배설한다. 배기조(37)내는 배기구멍(49)을 통해 내조(30)내와 연통한다. 배기조(37) 내에 연통하여 내부 배기관(39)을 배설한다. 내부 배기관(39)을 평면에서 보았을 때 기판재치대(35)의 중앙부에 위치시킨다. 외조(40)의 바닥판(211)에 외부배기판(41)을 배설하고, 내부 배기관(39)은 외부배기관(41)에 헐렁하게 삽입시킨다. 내부 배기관(39)을 바닥판(211)의 내벽(214)보다 깊이 L2만큼 돌출시킨다.

Description

기판처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제1실시형태의 플라즈마 CVD 장치를 설명하기 위한 단면도이다.

Claims (16)

  1. 외조와, 상기 외조내에 배설된 내조와, 상기 내조내에 연통하는 반응가스도입관과, 적어도 상기 외조의 내벽면까지 연장됨과 동시에, 상기 내조내에 연통가능하게 배설된 제1배기관과, 상기 외주에 형성된 배기구멍과, 상기 배기구멍에 연통하는 제2배기관을 가진 것을 특징으로 하는 기판처리장치.
  2. 제1항에 있어서, 상기 제1배기관의 전단이 상기 배기구멍내에 삽입되고, 상기 제1배기관의 전단이 상기 외조의 내벽면보다 외측으로 돌출되고, 상기 제1배기관과 상기 배기구멍 사이에는 간극이 형성되어 있는 것을 특징으로 하는 기판처리장치.
  3. 제1항에 있어서, 상기 제2배기관을 구비한 제1배기라인과 상기 제1배기관을 구비하고 상기 제1배기라인과는 독립적으로 배기가능한 제2배기라인을 추가로 구비한 것을 특징으로 하는 기판처리장치.
  4. 제2항에 있어서, 상기 외조내에 연통하는 압력검출기를 추가로 가지고, 상기 내조내에 연통하는 압력검출기는 배설하지 않은 것을 특징으로 하는 기판처리장치.
  5. 제1항 내지 제4항의 어느 한 항에 있어서, 상기 기판처리장치가 내조내에 배설된 기판재치부를 추가로 가지고, 상기 내조는 상기 기판재치부를 둘러싼 제2배기구멍을 가지며, 상기 제2배기구멍은 제1배기관과 연통가능한 것을 특징으로 하는 기판처리장치.
  6. 제5항에 있어서, 상기 기판처리장치가 상기 외조내에 배설된 배기조를 추가로 가지고, 상기 배기조는 상기 내조의 하부에 배설되고, 상기 내조내는 상기 제2배기구멍에 의해 상기 배기조내와 연통되고, 상기 제1배기관은 상기 배기조내와 연통되어 있는 것을 특징으로 하는 기판처리장치.
  7. 제6항에 있어서, 상기 제1배기관이 상기 기판재치부를 평면에서 보았을 때 상기 기판재치부의 거의 중앙에서 상기 배기조내와 연통하고 있는 것을 특징으로 하는 기판처리장치.
  8. 제6항에 있어서, 상기 제1배기관이 상기 제2배기구멍 중 서로 가장 떨어진 한쌍의 제2배기구멍 사이의 거리 L의 1/4 길이의 반경(L/4)을 가지며, 상기 기판재치부를 평면에서 보았을 때 상기 기판재치부의 중앙을 중심으로 하는 원내에서 상기 배기관내와 연통하고 있는 것을 특징으로 하는 기판처리장치.
  9. 제6항에 있어서, 상기 제1배기관이 다수 배설되어 있고, 상기 기판재치부가 평면에서 보았을 때 실질적으로 구형상이며, 상기 다수의 제1배기관이 상기 구형의 대각선상에서 상기 구형의 중앙에 대해 점대칭인 위치에서 상기 배기조내와 연통되어 있는 것을 특징으로 하는 기판처리장치.
  10. 제1항에 있어서, 상기 기판처리장치가 플라즈마 처리장치이고, 상기 외조가 하부 외조와 상부 외조를 구비하고, 상기 상부 외조에 캐소드 및 애노드의 한쪽이 장착되고, 상기 캐소드 및 애노드의 상기 한쪽을 둘러 싸면서 상부 외조에 내조 상측벽이 장착되며, 상기 캐소드 및 애노드의 다른쪽이 외조내를 승강가능하게 배치되고, 상기 캐소드 및 애노드의 상기 다른쪽이 기판재치부를 구비하고, 상기 캐소드 및 캐소드의 상기 다른쪽 주변에 상기 내조 상측벽과 대응하는 내조 하측벽이 장착되고, 상기 기판재치부를 둘러싸면서 상기 내조 하측벽에 제2배기구멍이 형성되고, 제2배기구멍은 상기 제1배기관과 연통가능하며, 상기 캐소드 및 상기 애노드의 상기 다른쪽이 상승함으로써 상기 캐소드, 상기 애노드, 상기 내조 상측벽 및 내조 하측벽에 의해 상기 내조를 구성하고, 상기 캐소드 및 상기 애노드의 상기 다른쪽이 상승하여 상기 내조를 형성했을 때 상기 제1배기관이 적어도 상기 외조의 상기 내벽면까지 연장되어 있는 것을 특징으로 하는 기판처리장치.
  11. 제10항에 있어서, 상기 캐소드 및 상기 애노드의 상기 다른쪽이 상승하여 상기 내조를 형성했을 때, 상기 제1배기관의 전단이 상기 배기구멍내에 삽입되고, 상기 제1배기관의 전단이 외조의 내벽면보다 외측으로 돌출하고, 상기 제1배기관과 상기 배기구멍 사이에는 간극이 형성되어 있는 것을 특징으로 하는 기판처리장치.
  12. 제10항 또는 제11항에 있어서, 상기 외조내에 배설된 배기조를 추가로 가지고, 상기 배기조는 상기 애노드 및 상기 캐소드의 상기 다른쪽 하부에 배치되고, 상기 내조내는 상기 제2배기구멍에 의해 상기 배기조내와 연통되며, 상기 제1배기관은 상기 배기조내와 연통되어 있는 것을 특징으로 하는 기판처리장치.
  13. 외조와, 상기 외조내에 배설된 내조와, 상기 내조내에 연통하는 반응가스도입관과, 상기 외조에 형성된 제1배기구멍과, 상기 내조내에 배설된 기판재치부와, 상기 기판재치부를 둘러싸면서 상기 내조에 형성된 제2배기구멍을 가지며, 상기 내조는 상기 제2배기구멍을 통해 상기 외조와 연통하고, 상기 제1배기구멍은 상기 기판재치부를 평면에서 보았을 경우에 상기 기판재치부의 거의 중앙에 위치하고 있는 것을 특징으로 하는 기판처리장치.
  14. 외조와, 상기 외조내에 배설된 내조와, 상기 내조내에 연통하는 반응가스도입관과, 상기 외조에 형성된 제1배기구멍과, 상기 내조내에 배설된 기판재치부와, 상기 기판재치부를 둘러싸면서 상기 내조에 형성된 제2배기구멍과, 상기 외조내에 배설된 배기조와, 상기 배기조에 형성된 제3배기구멍을 가지며, 상기 배기조는 상기 내조의 하부에 배설되고, 상기 내조내는 상기 제2배기구멍을 통해 상기 배기내와 연통하며, 상기 제3배기구멍은 상기 기판재치부를 평면에서 보았을 경우에 상기 기판재치부의 거의 중앙부에 위치하고 있는 것을 특징으로하는 기판처리장치.
  15. 제1항 내지 제9항과 제13항 또는 제14항의 어느 한 항에 있어서, 상기 기판처리장치가 플라즈마 처리장치인 것을 특징으로 하는 기판처리장치.
  16. 제1항 내지 제14항의 어느 한 항에 있어서, 상기 기판처리장치가 플라즈마 CVD 장치인 것을 특징으로 하는 기판처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960001800A 1995-01-27 1996-01-27 기판처리장치 KR100253134B1 (ko)

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KR100253134B1 KR100253134B1 (ko) 2000-05-01

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JPH05160031A (ja) * 1991-12-03 1993-06-25 Kokusai Electric Co Ltd Cvd装置
JPH05160033A (ja) * 1991-12-03 1993-06-25 Kokusai Electric Co Ltd Cvd装置
JPH05160032A (ja) * 1991-12-03 1993-06-25 Kokusai Electric Co Ltd Cvd装置
JPH05160035A (ja) * 1991-12-05 1993-06-25 Kokusai Electric Co Ltd Cvd装置
JPH05160036A (ja) * 1991-12-05 1993-06-25 Kokusai Electric Co Ltd プラズマ発生装置

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KR100253134B1 (ko) 2000-05-01
US5772770A (en) 1998-06-30

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