KR100443415B1
(ko)
*
|
1996-02-23 |
2004-11-03 |
동경 엘렉트론 주식회사 |
열처리장치
|
US6183565B1
(en)
|
1997-07-08 |
2001-02-06 |
Asm International N.V |
Method and apparatus for supporting a semiconductor wafer during processing
|
US5855675A
(en)
*
|
1997-03-03 |
1999-01-05 |
Genus, Inc. |
Multipurpose processing chamber for chemical vapor deposition processes
|
US6226452B1
(en)
*
|
1997-05-19 |
2001-05-01 |
Texas Instruments Incorporated |
Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging
|
US6120605A
(en)
*
|
1998-02-05 |
2000-09-19 |
Asm Japan K.K. |
Semiconductor processing system
|
JP3035735B2
(ja)
*
|
1998-09-07 |
2000-04-24 |
国際電気株式会社 |
基板処理装置および基板処理方法
|
DE69931278T2
(de)
*
|
1998-11-13 |
2007-03-29 |
Mattson Technology Inc., Fremont |
Vorrichtung und verfahren zur thermischen behandlung von halbleitersubstraten
|
JP2000169961A
(ja)
*
|
1998-12-02 |
2000-06-20 |
Matsushita Electric Ind Co Ltd |
スパッタ装置
|
US6234219B1
(en)
*
|
1999-05-25 |
2001-05-22 |
Micron Technology, Inc. |
Liner for use in processing chamber
|
US6123775A
(en)
*
|
1999-06-30 |
2000-09-26 |
Lam Research Corporation |
Reaction chamber component having improved temperature uniformity
|
US6307184B1
(en)
*
|
1999-07-12 |
2001-10-23 |
Fsi International, Inc. |
Thermal processing chamber for heating and cooling wafer-like objects
|
US6342691B1
(en)
*
|
1999-11-12 |
2002-01-29 |
Mattson Technology, Inc. |
Apparatus and method for thermal processing of semiconductor substrates
|
JP5054874B2
(ja)
*
|
1999-12-02 |
2012-10-24 |
ティーガル コーポレイション |
リアクタ内でプラチナエッチングを行う方法
|
US6566630B2
(en)
*
|
2000-04-21 |
2003-05-20 |
Tokyo Electron Limited |
Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object
|
US6592942B1
(en)
|
2000-07-07 |
2003-07-15 |
Asm International N.V. |
Method for vapour deposition of a film onto a substrate
|
US6838115B2
(en)
|
2000-07-12 |
2005-01-04 |
Fsi International, Inc. |
Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
|
KR20030028296A
(ko)
*
|
2001-09-28 |
2003-04-08 |
학교법인 한양학원 |
플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
|
CN101818334B
(zh)
|
2002-01-17 |
2012-12-12 |
松德沃技术公司 |
Ald装置和方法
|
US20030173346A1
(en)
*
|
2002-03-18 |
2003-09-18 |
Renken Wayne Glenn |
System and method for heating and cooling wafer at accelerated rates
|
JP4157718B2
(ja)
*
|
2002-04-22 |
2008-10-01 |
キヤノンアネルバ株式会社 |
窒化シリコン膜作製方法及び窒化シリコン膜作製装置
|
JP3883918B2
(ja)
*
|
2002-07-15 |
2007-02-21 |
日本エー・エス・エム株式会社 |
枚葉式cvd装置及び枚葉式cvd装置を用いた薄膜形成方法
|
US20070243317A1
(en)
*
|
2002-07-15 |
2007-10-18 |
Du Bois Dale R |
Thermal Processing System and Configurable Vertical Chamber
|
EP1540259A2
(en)
|
2002-09-10 |
2005-06-15 |
FSI International, Inc. |
Thermal process station with heated lid
|
US6818517B1
(en)
|
2003-08-29 |
2004-11-16 |
Asm International N.V. |
Methods of depositing two or more layers on a substrate in situ
|
US7335277B2
(en)
|
2003-09-08 |
2008-02-26 |
Hitachi High-Technologies Corporation |
Vacuum processing apparatus
|
US7410355B2
(en)
*
|
2003-10-31 |
2008-08-12 |
Asm International N.V. |
Method for the heat treatment of substrates
|
KR100596327B1
(ko)
*
|
2004-09-08 |
2006-07-06 |
주식회사 에이디피엔지니어링 |
플라즈마 처리장치
|
US20060054090A1
(en)
*
|
2004-09-15 |
2006-03-16 |
Applied Materials, Inc. |
PECVD susceptor support construction
|
US7789963B2
(en)
*
|
2005-02-25 |
2010-09-07 |
Tokyo Electron Limited |
Chuck pedestal shield
|
GB0510051D0
(en)
*
|
2005-05-17 |
2005-06-22 |
Forticrete Ltd |
Interlocking roof tiles
|
US20070028842A1
(en)
*
|
2005-08-02 |
2007-02-08 |
Makoto Inagawa |
Vacuum chamber bottom
|
US20070254494A1
(en)
*
|
2006-04-27 |
2007-11-01 |
Applied Materials, Inc. |
Faceplate with rapid temperature change
|
JP4805741B2
(ja)
*
|
2006-07-14 |
2011-11-02 |
Okiセミコンダクタ株式会社 |
半導体製造装置および半導体装置の製造方法
|
US8118946B2
(en)
*
|
2007-11-30 |
2012-02-21 |
Wesley George Lau |
Cleaning process residues from substrate processing chamber components
|
JP4523661B1
(ja)
*
|
2009-03-10 |
2010-08-11 |
三井造船株式会社 |
原子層堆積装置及び薄膜形成方法
|
KR101258002B1
(ko)
|
2010-03-31 |
2013-04-24 |
다이닛뽕스크린 세이조오 가부시키가이샤 |
기판처리장치 및 기판처리방법
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
JP5698043B2
(ja)
*
|
2010-08-04 |
2015-04-08 |
株式会社ニューフレアテクノロジー |
半導体製造装置
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US9695510B2
(en)
*
|
2011-04-21 |
2017-07-04 |
Kurt J. Lesker Company |
Atomic layer deposition apparatus and process
|
US8771536B2
(en)
|
2011-08-01 |
2014-07-08 |
Applied Materials, Inc. |
Dry-etch for silicon-and-carbon-containing films
|
US10269615B2
(en)
*
|
2011-09-09 |
2019-04-23 |
Lam Research Ag |
Apparatus for treating surfaces of wafer-shaped articles
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
US10224182B2
(en)
|
2011-10-17 |
2019-03-05 |
Novellus Systems, Inc. |
Mechanical suppression of parasitic plasma in substrate processing chamber
|
US9153463B2
(en)
*
|
2011-11-25 |
2015-10-06 |
Nhk Spring Co., Ltd. |
Substrate support device
|
US10276410B2
(en)
*
|
2011-11-25 |
2019-04-30 |
Nhk Spring Co., Ltd. |
Substrate support device
|
KR20130086806A
(ko)
*
|
2012-01-26 |
2013-08-05 |
삼성전자주식회사 |
박막 증착 장치
|
KR101283571B1
(ko)
*
|
2012-03-12 |
2013-07-08 |
피에스케이 주식회사 |
공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
KR101501362B1
(ko)
|
2012-08-09 |
2015-03-10 |
가부시키가이샤 스크린 홀딩스 |
기판처리장치 및 기판처리방법
|
US9034770B2
(en)
|
2012-09-17 |
2015-05-19 |
Applied Materials, Inc. |
Differential silicon oxide etch
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
US8969212B2
(en)
|
2012-11-20 |
2015-03-03 |
Applied Materials, Inc. |
Dry-etch selectivity
|
KR20140068338A
(ko)
*
|
2012-11-27 |
2014-06-09 |
삼성에스디아이 주식회사 |
태양전지용 성막 장치
|
US8980763B2
(en)
|
2012-11-30 |
2015-03-17 |
Applied Materials, Inc. |
Dry-etch for selective tungsten removal
|
US9111877B2
(en)
|
2012-12-18 |
2015-08-18 |
Applied Materials, Inc. |
Non-local plasma oxide etch
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9449795B2
(en)
*
|
2013-02-28 |
2016-09-20 |
Novellus Systems, Inc. |
Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
US10170282B2
(en)
|
2013-03-08 |
2019-01-01 |
Applied Materials, Inc. |
Insulated semiconductor faceplate designs
|
US9236283B2
(en)
*
|
2013-03-12 |
2016-01-12 |
Tokyo Ohka Kogyo Co., Ltd. |
Chamber apparatus and heating method
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US8956980B1
(en)
|
2013-09-16 |
2015-02-17 |
Applied Materials, Inc. |
Selective etch of silicon nitride
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9236265B2
(en)
|
2013-11-04 |
2016-01-12 |
Applied Materials, Inc. |
Silicon germanium processing
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
US9117855B2
(en)
|
2013-12-04 |
2015-08-25 |
Applied Materials, Inc. |
Polarity control for remote plasma
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
US9263278B2
(en)
|
2013-12-17 |
2016-02-16 |
Applied Materials, Inc. |
Dopant etch selectivity control
|
US9190293B2
(en)
|
2013-12-18 |
2015-11-17 |
Applied Materials, Inc. |
Even tungsten etch for high aspect ratio trenches
|
JP6230900B2
(ja)
*
|
2013-12-19 |
2017-11-15 |
東京エレクトロン株式会社 |
基板処理装置
|
US9852905B2
(en)
*
|
2014-01-16 |
2017-12-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Systems and methods for uniform gas flow in a deposition chamber
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9136273B1
(en)
|
2014-03-21 |
2015-09-15 |
Applied Materials, Inc. |
Flash gate air gap
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9847289B2
(en)
|
2014-05-30 |
2017-12-19 |
Applied Materials, Inc. |
Protective via cap for improved interconnect performance
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9159606B1
(en)
|
2014-07-31 |
2015-10-13 |
Applied Materials, Inc. |
Metal air gap
|
US9165786B1
(en)
|
2014-08-05 |
2015-10-20 |
Applied Materials, Inc. |
Integrated oxide and nitride recess for better channel contact in 3D architectures
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
US9478434B2
(en)
|
2014-09-24 |
2016-10-25 |
Applied Materials, Inc. |
Chlorine-based hardmask removal
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US9299583B1
(en)
|
2014-12-05 |
2016-03-29 |
Applied Materials, Inc. |
Aluminum oxide selective etch
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9373522B1
(en)
|
2015-01-22 |
2016-06-21 |
Applied Mateials, Inc. |
Titanium nitride removal
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
CN104681402B
(zh)
*
|
2015-03-16 |
2018-03-16 |
京东方科技集团股份有限公司 |
基板加热装置和基板加热方法
|
JP6054471B2
(ja)
|
2015-05-26 |
2016-12-27 |
株式会社日本製鋼所 |
原子層成長装置および原子層成長装置排気部
|
JP6054470B2
(ja)
|
2015-05-26 |
2016-12-27 |
株式会社日本製鋼所 |
原子層成長装置
|
JP6050860B1
(ja)
*
|
2015-05-26 |
2016-12-21 |
株式会社日本製鋼所 |
プラズマ原子層成長装置
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
KR102477302B1
(ko)
|
2015-10-05 |
2022-12-13 |
주성엔지니어링(주) |
배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
|
US10358721B2
(en)
*
|
2015-10-22 |
2019-07-23 |
Asm Ip Holding B.V. |
Semiconductor manufacturing system including deposition apparatus
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
JP6756853B2
(ja)
*
|
2016-06-03 |
2020-09-16 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
チャンバ内部の流れを拡散させることによる低い粒子数及びより良好なウエハ品質のための効果的で新しい設計
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
TWI716818B
(zh)
|
2018-02-28 |
2021-01-21 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
CN110093593A
(zh)
*
|
2019-05-20 |
2019-08-06 |
北京捷造光电技术有限公司 |
一种用于大面积pecvd工艺腔室双层排气结构
|
FI129609B
(en)
*
|
2020-01-10 |
2022-05-31 |
Picosun Oy |
SUBSTRATE PROCESSING EQUIPMENT
|
US11705375B2
(en)
*
|
2021-08-30 |
2023-07-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Etching apparatus and method
|