KR960027250A - 초고주파 모노리식 저잡음 증폭기 - Google Patents
초고주파 모노리식 저잡음 증폭기 Download PDFInfo
- Publication number
- KR960027250A KR960027250A KR1019940035166A KR19940035166A KR960027250A KR 960027250 A KR960027250 A KR 960027250A KR 1019940035166 A KR1019940035166 A KR 1019940035166A KR 19940035166 A KR19940035166 A KR 19940035166A KR 960027250 A KR960027250 A KR 960027250A
- Authority
- KR
- South Korea
- Prior art keywords
- low noise
- noise amplifier
- high frequency
- mesfet
- ultra high
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract 4
- 230000006641 stabilisation Effects 0.000 claims 2
- 238000011105 stabilization Methods 0.000 claims 2
- 230000006866 deterioration Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
커패시터들(101,102)와 인덕터(103)로 이루어지는 입력정합부에, 이에 캐스케이드로 연결된 두개의 MESFET들(104,113)과, 커패시터(117)로 이루어지는 출력정합부를 잦는 저잡음 증폭기에서, 접지를 한개의 노드로 묶고 본딩 와이어 (120)를 이용하여 외부로 연결할 경우 저하되는 안정도를 개선하기 위하여 두개의 MESFET들(104,113) 사이에 커패시터(110)를 병렬로 연결한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 저잡음 증폭기의 회로도, 제3A도는 제2도에서 선 A로 절단할 경우, MESFET 113의 출력 임피던스를 나타낸 도면.
Claims (2)
- 입력정합부와; 상기 입력정합부에 캐스케이드로 연결된 제1및 제2 MESFET들(104,113)과, 상기 제2MESFET(113)에 연결되는 출력정합부와 ; 상기 제1 MESFET(104)와 상기 제2MESFET(113) 사이에 연결되고, 접지를 하나 또는 그 이상의 노드로 묶어서 외부로 연결할 때 와이어 본딩 인덕턴스로 인한 안정도의 저하를 방지하는 안정화 수단을 포함하는 초고주파 모노리식 저잡음 증폭기.
- 제1항에 있어서, 상기 안정화 수단은 상기 제1MESFET(104)와 제2MESFET(113) 사이에 병렬로 연결되는 커패시터(110)를 포함하는 초고주파 모노리식 저잡음 증폭기.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035166A KR0129843B1 (ko) | 1994-12-19 | 1994-12-19 | 초고주파 모노리식 저잡음 증폭기 |
US08/567,576 US5642080A (en) | 1994-12-19 | 1995-12-05 | Low noise amplifier in monolithic integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035166A KR0129843B1 (ko) | 1994-12-19 | 1994-12-19 | 초고주파 모노리식 저잡음 증폭기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960027250A true KR960027250A (ko) | 1996-07-22 |
KR0129843B1 KR0129843B1 (ko) | 1998-10-01 |
Family
ID=19402288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035166A KR0129843B1 (ko) | 1994-12-19 | 1994-12-19 | 초고주파 모노리식 저잡음 증폭기 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5642080A (ko) |
KR (1) | KR0129843B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3175823B2 (ja) * | 1998-04-24 | 2001-06-11 | 日本電気株式会社 | 高周波増幅装置 |
JP2000174513A (ja) * | 1998-12-07 | 2000-06-23 | Mitsubishi Electric Corp | マイクロ波増幅器 |
KR20010106454A (ko) * | 1999-06-30 | 2001-11-29 | 다니구찌 이찌로오, 기타오카 다카시 | 마이크로파 증폭기 |
US6292060B1 (en) | 1999-09-13 | 2001-09-18 | Chartered Semiconductor Manufacturing Ltd. | Technique to generate negative conductance in CMOS tuned cascode RF amplifiers |
US7266360B2 (en) * | 2004-04-07 | 2007-09-04 | Neoreach, Inc. | Low noise amplifier for wireless communications |
US20080048785A1 (en) * | 2006-08-22 | 2008-02-28 | Mokhtar Fuad Bin Haji | Low-noise amplifier |
KR100884159B1 (ko) * | 2007-10-22 | 2009-02-17 | 한국정보통신대학교 산학협력단 | 자동정합 커패시터를 이용한 다중 주파수 대역 임피던스정합회로 |
KR20160097493A (ko) | 2015-02-09 | 2016-08-18 | (주) 토네이도테크 | 싸이크론 배기유닛을 구비한 담배꽁초 및 담배연기 처리장치 |
JP6440642B2 (ja) * | 2016-01-25 | 2018-12-19 | 三菱電機株式会社 | 低雑音増幅回路及び低雑音増幅器 |
-
1994
- 1994-12-19 KR KR1019940035166A patent/KR0129843B1/ko not_active IP Right Cessation
-
1995
- 1995-12-05 US US08/567,576 patent/US5642080A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0129843B1 (ko) | 1998-10-01 |
US5642080A (en) | 1997-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0911985B1 (en) | Dual band transmitter with switchable matching circuit | |
KR930001293B1 (ko) | 고주파전력증폭회로 | |
JP2892452B2 (ja) | 増幅回路 | |
KR950016341A (ko) | Catv용 신호 스플리터 회로 | |
KR960027250A (ko) | 초고주파 모노리식 저잡음 증폭기 | |
CA1210093A (en) | High frequency amplifier | |
CA2110478A1 (en) | Microwave frequency doubler circuit | |
JPH06232657A (ja) | 高周波増幅器 | |
US5341111A (en) | Microwave oscillator circuit | |
KR950013017A (ko) | 고주파 대역 증폭기 | |
SE0003510D0 (sv) | Voltage controlled oscillator | |
JPS63219210A (ja) | Fet増幅器 | |
JPH0585101U (ja) | マイクロ波半導体装置用バイアス回路 | |
JP4688410B2 (ja) | 広帯域増幅器 | |
US5093629A (en) | Amplifier circuit having second order signal cancellation | |
JP3030977B2 (ja) | 逓倍器 | |
JP2848617B2 (ja) | 周波数2逓倍器 | |
JP2000196365A (ja) | 高周波アイソレ―ションアンプ | |
KR950013066A (ko) | 저잡음 블럭다운 컨버터(lnb) | |
JPH09162657A (ja) | マイクロ波電力増幅回路 | |
JPH06276038A (ja) | 高周波低雑音増幅器 | |
JPH0535923B2 (ko) | ||
JP2644981B2 (ja) | 超高周波モノリシックの低雑音増幅器 | |
JPH06232633A (ja) | 三端子負性素子発振器 | |
KR950022050A (ko) | 하모닉매칭에 의한 전력 증폭기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121031 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20131024 Year of fee payment: 17 |
|
FPAY | Annual fee payment |
Payment date: 20141027 Year of fee payment: 18 |
|
EXPY | Expiration of term |