KR960023268A - 액상 에피택셜 성장법 - Google Patents

액상 에피택셜 성장법 Download PDF

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Publication number
KR960023268A
KR960023268A KR1019950029402A KR19950029402A KR960023268A KR 960023268 A KR960023268 A KR 960023268A KR 1019950029402 A KR1019950029402 A KR 1019950029402A KR 19950029402 A KR19950029402 A KR 19950029402A KR 960023268 A KR960023268 A KR 960023268A
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KR
South Korea
Prior art keywords
epitaxial growth
growth method
liquid
doped
light emitting
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KR1019950029402A
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English (en)
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KR0177007B1 (ko
Inventor
무네히사 야나기사와
긴고 스즈키
히토시 이케다
마사히사 엔도
Original Assignee
이가라시 스구루
신에쓰 한도타이 가부시키가이샤
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Publication of KR960023268A publication Critical patent/KR960023268A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

목적 : 다량의 산소가 도프되고, 또한 산화 갈륨(Ga2O3)의 석출물이 매우 적은 p형 GaP층을 성장시킬 수가 있으며, 따라서, 고휘도의 GaP 적색 발광 다이오드를 고수율로 제조하는 것을 가능하게 한 액상 에피택셜 성장법을 제공한다.
구성 : GaP 적색 발광 다이오드를 에피택셜 웨이퍼를 제조함에 있어서, 산화 갈륨(Ga2O3)을 첨가한 Ga 용액을 사용하여 액상 에피택셜 성장법에 의해서 산소를 도프한 p형 GaP 층을 적층하는 방법에 있어서, 상기 Ga2O3로서, 겉보기 밀도 3.0∼5.9g/㎤(25℃)의 Ga2O3고결체를 제공한다.

Description

액상 에피택셜 성장법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. GaP 적색 발광 다이오드용 에피택셜 에이퍼를 제조함에 있어서, 산화 갈륨(Ga2O3)을 첨가한 Ga 용액을 사용하고, 액상 에피택셜 성장법에 의하여 산소를 도프한 p형 GaP층을 적층하는 방법에 있어서, 상기 Ga2O3로서 겉보기 밀도 3.0∼5.9g/㎤(25℃)의 Ga2O3고결체를 사용하는 것을 특징으로 하는 액상 에피택셜 성장법.
  2. 제1항에 있어서, 상기 Ga2O3고결체의 크기가 0.03㎤(25℃) 이상임을 특징으로 하는 액상 에피택셜 성장법.
  3. 제1항 또는 제2항에 있어서, 상기 Ga2O3고결체가, 소결체임을 특징으로 하는 액상 에피택셜 성장법.
  4. 제1항 또는 제2항에 있어서, 상기 Ga2O3고결체가, 결합제를 사용한 소결체임을 특징으로 하는 액상 에피택셜 성장법.
  5. 제4항에 있어서, 상기 결합제가 산화규소(SiO2) 또는 산화아연(ZnO)임을 특징으로 하는 액상 에피택셜 성장법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950029402A 1994-12-05 1995-09-07 액상 에피택셜 성장법 KR0177007B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30086294A JP3144247B2 (ja) 1994-12-05 1994-12-05 液相エピタキシャル成長法
JP94-300862 1994-12-05

Publications (2)

Publication Number Publication Date
KR960023268A true KR960023268A (ko) 1996-07-18
KR0177007B1 KR0177007B1 (ko) 1999-03-20

Family

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Application Number Title Priority Date Filing Date
KR1019950029402A KR0177007B1 (ko) 1994-12-05 1995-09-07 액상 에피택셜 성장법

Country Status (3)

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JP (1) JP3144247B2 (ko)
KR (1) KR0177007B1 (ko)
TW (1) TW270215B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101772752B1 (ko) 2015-07-09 2017-08-29 김대희 부스바용 펀칭장치

Also Published As

Publication number Publication date
JPH08157300A (ja) 1996-06-18
JP3144247B2 (ja) 2001-03-12
KR0177007B1 (ko) 1999-03-20
TW270215B (en) 1996-02-11

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