KR960019493A - 유전체 박막상의 무결함 화합물 반도체 박막의 제조 방법 - Google Patents

유전체 박막상의 무결함 화합물 반도체 박막의 제조 방법 Download PDF

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KR960019493A
KR960019493A KR1019940029924A KR19940029924A KR960019493A KR 960019493 A KR960019493 A KR 960019493A KR 1019940029924 A KR1019940029924 A KR 1019940029924A KR 19940029924 A KR19940029924 A KR 19940029924A KR 960019493 A KR960019493 A KR 960019493A
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thin film
compound semiconductor
dielectric
free compound
semiconductor thin
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KR1019940029924A
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English (en)
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KR0148599B1 (ko
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이번
윤미영
백종협
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양승택
재단법인 한국전자통신연구소
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Priority to KR1019940029924A priority Critical patent/KR0148599B1/ko
Priority to US08/350,022 priority patent/US5686350A/en
Priority to GB9424423A priority patent/GB2295271B/en
Priority to JP6299731A priority patent/JP2643875B2/ja
Publication of KR960019493A publication Critical patent/KR960019493A/ko
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Publication of KR0148599B1 publication Critical patent/KR0148599B1/ko

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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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  • Chemical & Material Sciences (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 유전체 박막상에 무결함 반도체 격자구조를 갖는 화합물 반도체 박막을 제조하는 방법에 관한 것이다.
본 발명은 고농도의 탄소 불순물이 첨가된 AlGaAs계열의 박막층 위에 이종의 화합물 반도체 박막인 GaAs, InGaAs 또는 InAs층을 가지는 다층구조에 대해 수증기 분위기에서 열처리하여 산화시키는 것을 특징으로 하여 수행되며, 본 발명에 의해 유전체인 Al2O3박막층위에 이종 화합물 반도체의 박막층을 결함없이 빠르게 성장시킬 수 있는 효과가 있다.

Description

유전체 박막상의 무결함 화합물 반도체 박막의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 반도체 기판상에 고농도의 탄소 불순물이 첨가된 AlGaAs계열의 박막층(2a)을 성장시킨후, 연속적으로 그 위에 이종의 화합물 반도체 박막층(3)을 성장시키는 공정과; 및 상기 다층구조에 대해 수증기 분위기에서 열처리하여 산화시키는 과정을 포함하는 것을 특징으로 하는 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법.
  2. 제1항에 있어서, 첨가되는 상기 탄소 불순물의 농도는 1020㎝-3이상인 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법.
  3. 제1항에 있어서, 상기 산화 열처리는 약 400℃에서 수증기가 섞인 질소를 흘리며, 5분 정도 자연산화시킴으로써 이루어지는 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940029924A 1994-11-15 1994-11-15 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법 KR0148599B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940029924A KR0148599B1 (ko) 1994-11-15 1994-11-15 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법
US08/350,022 US5686350A (en) 1994-11-15 1994-11-29 Method for fabricating defect-free compound semiconductor thin film on dielectric thin film
GB9424423A GB2295271B (en) 1994-11-15 1994-12-02 Method for fabricating a compound semiconductor thin film on dielectric thin film
JP6299731A JP2643875B2 (ja) 1994-11-15 1994-12-02 誘電体薄膜上の無欠陥化合物の半導体薄膜の製造方法

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KR1019940029924A KR0148599B1 (ko) 1994-11-15 1994-11-15 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법

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KR960019493A true KR960019493A (ko) 1996-06-17
KR0148599B1 KR0148599B1 (ko) 1998-12-01

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JP (1) JP2643875B2 (ko)
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GB (1) GB2295271B (ko)

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DE19640005A1 (de) * 1996-09-27 1998-04-02 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
DE10234694A1 (de) 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat
JP4256175B2 (ja) 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP4649819B2 (ja) * 2003-03-06 2011-03-16 ソニー株式会社 半導体集積素子の製造方法
JP3868407B2 (ja) * 2003-07-25 2007-01-17 ローム株式会社 化合物半導体層の形成方法
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US20070262295A1 (en) * 2006-05-11 2007-11-15 Atmel Corporation A method for manipulation of oxygen within semiconductor materials
US7550758B2 (en) 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
CN105355545A (zh) * 2015-12-10 2016-02-24 中国电子科技集团公司第十三研究所 提高p型铟镓砷薄膜掺杂浓度的方法、薄膜的制备方法及其应用

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US4216036A (en) * 1978-08-28 1980-08-05 Bell Telephone Laboratories, Incorporated Self-terminating thermal oxidation of Al-containing group III-V compound layers
US5321302A (en) * 1990-07-25 1994-06-14 Nec Corporation Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency
US5116455A (en) * 1991-01-24 1992-05-26 Spire Corporation Process of making strain-free, carbon-doped epitaxial layers and products so made
US5264397A (en) * 1991-02-15 1993-11-23 The Whitaker Corporation Method for activating zinc in semiconductor devices

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JP2643875B2 (ja) 1997-08-20
US5686350A (en) 1997-11-11
JPH08143398A (ja) 1996-06-04
GB2295271A (en) 1996-05-22
GB9424423D0 (en) 1995-01-18
GB2295271B (en) 1998-09-02
KR0148599B1 (ko) 1998-12-01

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