KR960012350A - 건식 에칭 방법, 반도체 장치의 제조 방법 및 액정 표시 장치의 제조 방법 - Google Patents
건식 에칭 방법, 반도체 장치의 제조 방법 및 액정 표시 장치의 제조 방법 Download PDFInfo
- Publication number
- KR960012350A KR960012350A KR1019950032075A KR19950032075A KR960012350A KR 960012350 A KR960012350 A KR 960012350A KR 1019950032075 A KR1019950032075 A KR 1019950032075A KR 19950032075 A KR19950032075 A KR 19950032075A KR 960012350 A KR960012350 A KR 960012350A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- gas
- film
- transparent electrode
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000001312 dry etching Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims 18
- 238000004519 manufacturing process Methods 0.000 title claims 10
- 239000004973 liquid crystal related substance Substances 0.000 title claims 2
- 238000005530 etching Methods 0.000 claims abstract description 32
- 239000000460 chlorine Substances 0.000 claims abstract 8
- 238000001020 plasma etching Methods 0.000 claims abstract 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract 6
- 239000010408 film Substances 0.000 claims 31
- 239000007789 gas Substances 0.000 claims 31
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Liquid Crystal (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94-233474 | 1994-09-28 | ||
| JP23347494 | 1994-09-28 | ||
| JP16751495 | 1995-07-03 | ||
| JP95-167514 | 1995-07-03 | ||
| JP95-249467 | 1995-09-27 | ||
| JP7249467A JP3054584B2 (ja) | 1994-09-28 | 1995-09-27 | ドライエッチング方法、半導体装置の製造方法、及び液晶表示装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960012350A true KR960012350A (ko) | 1996-04-20 |
Family
ID=27322873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950032075A KR960012350A (ko) | 1994-09-28 | 1995-09-27 | 건식 에칭 방법, 반도체 장치의 제조 방법 및 액정 표시 장치의 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3054584B2 (ja) |
| KR (1) | KR960012350A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4524223B2 (ja) * | 2004-07-16 | 2010-08-11 | 富士フイルム株式会社 | 機能素子及びその製造方法、ならびに固体撮像素子及びその製造方法 |
| EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
-
1995
- 1995-09-27 JP JP7249467A patent/JP3054584B2/ja not_active Expired - Fee Related
- 1995-09-27 KR KR1019950032075A patent/KR960012350A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3054584B2 (ja) | 2000-06-19 |
| JPH0974087A (ja) | 1997-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |