KR960009286A - 제2고조파 발진기용 니오듐 : 이트륨 바나데이트(Nd:YVO_4) 결정의 반사방지막 - Google Patents

제2고조파 발진기용 니오듐 : 이트륨 바나데이트(Nd:YVO_4) 결정의 반사방지막 Download PDF

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KR960009286A
KR960009286A KR1019940021453A KR19940021453A KR960009286A KR 960009286 A KR960009286 A KR 960009286A KR 1019940021453 A KR1019940021453 A KR 1019940021453A KR 19940021453 A KR19940021453 A KR 19940021453A KR 960009286 A KR960009286 A KR 960009286A
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yvo
crystal
harmonic oscillator
refractive index
harmonic
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KR1019940021453A
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KR100287113B1 (ko
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박성수
김용훈
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H01S3/0623—Antireflective [AR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

본 발명은 제2고조파 발진기용 Nd:YVO4결정의 반사방지막에 관한 것으로, 좀 더 상세하게는 제2고조파 발진기의 이득매질용Nd:YVO4결정의 a축으로 평광된 기본파와 반도체 레이저 파장 및 제2고조파에 대해 반사를 방지할 수 있도록 Nd:YVO4결정 의 양면에 고굴절율의 유전체층과 저굴절율의 유전체층을 교대로 형성시키므로써 반사에 의한 손실을 줄여 제2고조파의 출력을 증가시킬 수 있는 제2고조파 발진기용 Nd:YVO4결정의 반사방지막에 관한 것이다.

Description

제2고조파 발진기용 니오듐:이트륨 바나데이트(Nd:YVO4) 결정의 반사방지막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 내부 공진기형 제2고조파 발생장치의 개략도이고,
제2도는 Nd:YVO4결정의 편광방향에 따른 출력 특성을 나타낸 그래프이며,
제3도는 본 발명의 광학코팅 디자인이다.

Claims (4)

  1. 제2고조파 발진기의 이득매질용 Nd:YVO4결정의 a측으로 편광된 기본파와 반도체 레이저 파장 및 제2고조파에 대해 반사를 방지할 수 있도록 Nd:YVO4결정의 양면에 고굴절율의 유전체층과 저굴절율의 유전체층을 교대로 형성시켜서 된 것을 특징으로 하는 제2고조파 발진기용 결정의 Nd:YVO4반사방지막.
  2. 제1항에 있어서, 상기 고굴절율의 유전체층이 532nm에서 약 2.2의 굴절율을 갖는 ZrO2이고, 저굴절율의 유전체층이 약 1.48의 굴절율을 갖는 SiO2인 것을 특징으로 하는 제2고조파 발진기용 Nd:YVO4결정의 반사방지막.
  3. 제1항에 있어서, 상기 반사방지막이 기본파에 대한 반사율이 0.1%이하, 제2고조파 및 반도체 다이오드 파장에 대한 투과율이 90%이상인 것을 특징으로 하는 제2고조파 발진기용 Nd:YVO4결정의 반사방지막.
  4. 제1항 또는 제2항에 잇어서, 상기 반사방지막의 설계중심파장인 550nm에서 각층의 광학적 두께가 하기와 같은 것을 특징으로 하는 제2고조파 발진기용 Nd:YVO4결정의 반사방지막.
    KTP/0.10206HL 0.15813H 0.0908L 0.29427H 0.16082L 0.09419H 0.39174L/Air, 여기서 L은 SiO2층, H는 ZrO2층.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940021453A 1994-08-29 1994-08-29 제2고조파발진기용니오듐;이트륨바나데이트결정의반사방지막 KR100287113B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940021453A KR100287113B1 (ko) 1994-08-29 1994-08-29 제2고조파발진기용니오듐;이트륨바나데이트결정의반사방지막

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940021453A KR100287113B1 (ko) 1994-08-29 1994-08-29 제2고조파발진기용니오듐;이트륨바나데이트결정의반사방지막

Publications (2)

Publication Number Publication Date
KR960009286A true KR960009286A (ko) 1996-03-22
KR100287113B1 KR100287113B1 (ko) 2001-09-17

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