KR960009134A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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KR960009134A
KR960009134A KR1019950027605A KR19950027605A KR960009134A KR 960009134 A KR960009134 A KR 960009134A KR 1019950027605 A KR1019950027605 A KR 1019950027605A KR 19950027605 A KR19950027605 A KR 19950027605A KR 960009134 A KR960009134 A KR 960009134A
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resin
semiconductor device
manufacturing
recess
coated
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히데오 야마나까
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이데이 노브유끼
소니 가부시끼가이샤
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Publication of KR960009134A publication Critical patent/KR960009134A/ko

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    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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Abstract

반도체장치의 제조방법은 기대의 휘어짐의 발생을 감소시킬 수 있으며 작동에서의 신뢰성을 강화할 수 있다. 그 방법은 외부리드부와 내부리드부를 가지는 리드프레임을 준비하는 단계와; 캐비티의 성형을 위해 상측금형과 하측금형을 준비하는 단계와; 상측금형과 하측금형사이에 리드프레임의 외부리드부를 유지하며, 상측금형과 하측금형사이에 형성된 캐비티내로 용융된 수지를 사출주입하고 그 수지를 경화시키며, 그로인해 대략 중앙부에 오목부를 가지는 기대 및 오목부의 개구부 외측을 둘러싸며 기대와 프레임부 사이에 리드프레임의 내부리드부를 유지한 프레임부를 성형하는 단계와; 오목부내에 반도체소자를 적치하고, 반도체소자를 리드프레임의 내부리드에 접속하는 단계와; 반도체소자를 봉함하기 위해 오목부내에 투광성수지를 포팅하는 단계와를 포함하여 이루어진다.

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 (A)~(C)는 본 발명에 따르는 반도체장치의 제조공정을 순서대로 설명하는 단면도로써,
제1도(A)는 클램핑공정을 나타내며,
제1도(B)는 기대 성형공정을 나타내며,
제1도(C)는 트림 및 성형공정을 각각 나타낸다.

Claims (11)

  1. 반도체장치의 제조방법에 있어서, 내부리드부와 외부리드부를 가지는 리드프레임을 준비하는 단계와, 캐비티를 형성하기 위해 상측금형과 하측금형을 준비하는 단계와, 상기 상측금형과 상기 하측금형사이에 상기 리드프레임의 상기 외부리드부를 유지하고, 상기 상측 및 하측 금형사이에 형성된 캐비티내로 용융된 수지를 사출주입시키고 그 수지를 경화시키고, 그로인해 대략 중앙부에 오목부를 가지는 기대 및 상기 오복부의 개구부 외측을 둘러싸며 상기 기대와의 사이에 상기 리드프레임의 상기 내부리드부를 유지하는 프레임부를 성형하는 단계와, 상기 오목부내에 반도체소자를 적치하고, 상기 리드프레임의 상기 내부리드에 상기 반도체소자를 접속하는 단계와, 상기 반도체소자를 봉함하기 위해 상기 오목부내로 투광성수지를 코팅하는 단계와를 포함하여 이루어지는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 수지는 열가소성수지인 것을 특징으로 하는 반도체장치의 제조방법.
  3. 제2항에 있어서, 상기 열가소성수지는 결정성 열가소성수지, 비결정성 열가소성수지, 결정성 열가고성수지 및 비결정성 열가소성수지의 혼합물로 구성되는 일군중에 선택된 한종류인 것을 특징으로 하는 반도체장치의 제조방법.
  4. 제1항에 있어서, 상기 수지는 실리콘수지인 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제4항에 있어서, 상기 실리콘수지가 액상 실리콘수지이거나 페이스트상 실리콘수지중의 하나인 것을 특징으로 하는 반도체장치의 제조방법.
  6. 제1항에 있어서, 상기 수지는 실란커플링제가 첨가된 실리콘수지인 것을 특징으로 하는 반도체장치의 제조방법.
  7. 제6항에 있어서, 상기 실리콘수지를 사출주입함에 있어서 상기 상측 및 하측금형의 내부표면이 불소수지막으로 코팅되는 것을 특징으로 하는 반도체장치의 제조방법.
  8. 제4항에 있어서, 상기 실리콘수지를 사출주입함에 있어서 상기 기대 및 상기 프레임부사이에 유지되는 상기 내부리드부의 표면이 실란커플링제로 코팅되는 것을 특징으로 하는 반도체장치의 제조방법.
  9. 제4항에 있어서, 상기 오목부내에 포팅된 상기 투광성수지의 표면이 상기 투광성수지의 경도보다 높은 경도를 가지는 전도성막으로 코팅된 것을 특징으로 하는 반도체장치의 제조방법.
  10. 제4항에 있어서, 상기 오목부내에 포팅된 상기 투광성수지의 표면이 상기 투광성수지의 경도보다 높은 경도를 가지는 광학적 무반사성막으로 코팅된 것을 특징으로 하는 반도체장치의 제조방법.
  11. 제4항에 있어서, 오목부내에 포팅된 상기 투광성수지의 표면이 상기 투광성수지의 경도보다 높은 경도를 가지는 적외선 차단막으로 코팅된 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950027605A 1994-08-31 1995-08-30 반도체장치의 제조방법 KR960009134A (ko)

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JP23211194A JP3417079B2 (ja) 1994-08-31 1994-08-31 半導体装置の製造方法
JP94-232111 1994-08-31

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KR960009134A true KR960009134A (ko) 1996-03-22

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Cited By (1)

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KR100833942B1 (ko) * 2002-07-11 2008-05-30 삼성테크윈 주식회사 리이드 프레임과 그것을 구비한 반도체 팩키지 및, 리이드프레임 제조 방법

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JPH0961271A (ja) * 1995-08-29 1997-03-07 Mitsubishi Electric Corp 半導体式センサ及びその製造方法
JP2933036B2 (ja) * 1996-11-29 1999-08-09 日本電気株式会社 中空パッケージ
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