KR960009127B1 - Silicon field emission emitter and the manufacturing method - Google Patents
Silicon field emission emitter and the manufacturing method Download PDFInfo
- Publication number
- KR960009127B1 KR960009127B1 KR93000083A KR930000083A KR960009127B1 KR 960009127 B1 KR960009127 B1 KR 960009127B1 KR 93000083 A KR93000083 A KR 93000083A KR 930000083 A KR930000083 A KR 930000083A KR 960009127 B1 KR960009127 B1 KR 960009127B1
- Authority
- KR
- South Korea
- Prior art keywords
- emitter
- manufacturing
- field emission
- silicon field
- emission emitter
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/02—Manufacture of cathodes
- H01J2209/022—Cold cathodes
- H01J2209/0223—Field emission cathodes
- H01J2209/0226—Sharpening or resharpening of emitting point or edge
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93000083A KR960009127B1 (en) | 1993-01-06 | 1993-01-06 | Silicon field emission emitter and the manufacturing method |
US08/114,134 US5401676A (en) | 1993-01-06 | 1993-08-30 | Method for making a silicon field emission device |
FR9311173A FR2700222B1 (fr) | 1993-01-06 | 1993-09-20 | Procédé de formation d'un dispositif à effet de champ en silicium. |
JP30610793A JP2767373B2 (ja) | 1993-01-06 | 1993-11-12 | シリコン電界放出エミッタ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93000083A KR960009127B1 (en) | 1993-01-06 | 1993-01-06 | Silicon field emission emitter and the manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940018911A KR940018911A (ko) | 1994-08-19 |
KR960009127B1 true KR960009127B1 (en) | 1996-07-13 |
Family
ID=19349374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93000083A KR960009127B1 (en) | 1993-01-06 | 1993-01-06 | Silicon field emission emitter and the manufacturing method |
Country Status (4)
Country | Link |
---|---|
US (1) | US5401676A (ko) |
JP (1) | JP2767373B2 (ko) |
KR (1) | KR960009127B1 (ko) |
FR (1) | FR2700222B1 (ko) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5536193A (en) | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
US5449970A (en) | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5686791A (en) | 1992-03-16 | 1997-11-11 | Microelectronics And Computer Technology Corp. | Amorphic diamond film flat field emission cathode |
US5543684A (en) | 1992-03-16 | 1996-08-06 | Microelectronics And Computer Technology Corporation | Flat panel display based on diamond thin films |
US5675216A (en) | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
KR950008758B1 (ko) * | 1992-12-11 | 1995-08-04 | 삼성전관주식회사 | 실리콘 전계방출 소자 및 그의 제조방법 |
US5534743A (en) * | 1993-03-11 | 1996-07-09 | Fed Corporation | Field emission display devices, and field emission electron beam source and isolation structure components therefor |
JPH07111868B2 (ja) * | 1993-04-13 | 1995-11-29 | 日本電気株式会社 | 電界放出冷陰極素子 |
KR0183628B1 (ko) * | 1993-09-16 | 1999-03-20 | 박경팔 | 전계방사형 음극구조체의 제조방법 |
KR100366191B1 (ko) | 1993-11-04 | 2003-03-15 | 에스아이 다이아몬드 테크놀로지, 인코포레이티드 | 플랫패널디스플레이시스템및구성소자의제조방법 |
JP3249288B2 (ja) * | 1994-03-15 | 2002-01-21 | 株式会社東芝 | 微小真空管およびその製造方法 |
JP2770755B2 (ja) * | 1994-11-16 | 1998-07-02 | 日本電気株式会社 | 電界放出型電子銃 |
KR0159805B1 (ko) * | 1994-12-10 | 1998-12-01 | 이종덕 | 저전압구동형 전계방출어레이의 제조방법 |
JPH08180824A (ja) * | 1994-12-22 | 1996-07-12 | Hitachi Ltd | 電子線源、その製造方法、電子線源装置及びそれを用いた電子線装置 |
JPH08222126A (ja) * | 1995-02-13 | 1996-08-30 | Nec Kansai Ltd | 電界放出冷陰極の製造方法 |
US6033277A (en) * | 1995-02-13 | 2000-03-07 | Nec Corporation | Method for forming a field emission cold cathode |
US5628659A (en) | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
US5643032A (en) * | 1995-05-09 | 1997-07-01 | National Science Council | Method of fabricating a field emission device |
US5641706A (en) * | 1996-01-18 | 1997-06-24 | Micron Display Technology, Inc. | Method for formation of a self-aligned N-well for isolated field emission devices |
EP0789382A1 (en) * | 1996-02-09 | 1997-08-13 | International Business Machines Corporation | Structure and method for fabricating of a field emission device |
KR100442982B1 (ko) * | 1996-04-15 | 2004-09-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 전계방출형전자원및그제조방법 |
US5672544A (en) * | 1996-04-22 | 1997-09-30 | Pan; Yang | Method for reducing silicided poly gate resistance for very small transistors |
JP3127844B2 (ja) * | 1996-11-22 | 2001-01-29 | 日本電気株式会社 | 電界放出型冷陰極 |
US5930589A (en) * | 1997-02-28 | 1999-07-27 | Motorola, Inc. | Method for fabricating an integrated field emission device |
US6144145A (en) * | 1997-07-11 | 2000-11-07 | Emagin Corporation | High performance field emitter and method of producing the same |
US6091190A (en) * | 1997-07-28 | 2000-07-18 | Motorola, Inc. | Field emission device |
US5956611A (en) * | 1997-09-03 | 1999-09-21 | Micron Technologies, Inc. | Field emission displays with reduced light leakage |
US6323587B1 (en) | 1998-08-06 | 2001-11-27 | Micron Technology, Inc. | Titanium silicide nitride emitters and method |
US6232705B1 (en) * | 1998-09-01 | 2001-05-15 | Micron Technology, Inc. | Field emitter arrays with gate insulator and cathode formed from single layer of polysilicon |
US6328620B1 (en) * | 1998-12-04 | 2001-12-11 | Micron Technology, Inc. | Apparatus and method for forming cold-cathode field emission displays |
US6235545B1 (en) * | 1999-02-16 | 2001-05-22 | Micron Technology, Inc. | Methods of treating regions of substantially upright silicon-comprising structures, method of treating silicon-comprising emitter structures, methods of forming field emission display devices, and cathode assemblies |
US6417016B1 (en) * | 1999-02-26 | 2002-07-09 | Micron Technology, Inc. | Structure and method for field emitter tips |
US6086442A (en) * | 1999-03-01 | 2000-07-11 | Micron Technology, Inc. | Method of forming field emission devices |
KR20010011136A (ko) * | 1999-07-26 | 2001-02-15 | 정선종 | 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법 |
KR20010058197A (ko) * | 1999-12-24 | 2001-07-05 | 박종섭 | 전계방출표시 소자의 제조방법 |
US6692323B1 (en) * | 2000-01-14 | 2004-02-17 | Micron Technology, Inc. | Structure and method to enhance field emission in field emitter device |
KR20010091420A (ko) * | 2000-03-15 | 2001-10-23 | 윤덕용 | 금속실리사이드가 코팅된 실리콘 팁의 제조방법 |
JP2001266735A (ja) * | 2000-03-22 | 2001-09-28 | Lg Electronics Inc | 電界放出型冷陰極構造及びこの陰極を備えた電子銃 |
US6664721B1 (en) * | 2000-10-06 | 2003-12-16 | Extreme Devices Incorporated | Gated electron field emitter having an interlayer |
TW483025B (en) * | 2000-10-24 | 2002-04-11 | Nat Science Council | Formation method of metal tip electrode field emission structure |
US20040029413A1 (en) * | 2000-10-30 | 2004-02-12 | Norbert Angert | Film material comprising spikes and method for the production thereof |
EP2819165B1 (en) * | 2013-06-26 | 2018-05-30 | Nexperia B.V. | Electric field gap device and manufacturing method |
KR20220082232A (ko) | 2020-12-10 | 2022-06-17 | (주)조타 | 동계스포츠형 이동식 슬로프 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
US3669241A (en) * | 1970-11-13 | 1972-06-13 | Taylor Mfg | Package accumulating conveyor |
JPS5325632B2 (ko) * | 1973-03-22 | 1978-07-27 | ||
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
JPS5436828B2 (ko) * | 1974-08-16 | 1979-11-12 | ||
EP0434330A3 (en) * | 1989-12-18 | 1991-11-06 | Seiko Epson Corporation | Field emission device and process for producing the same |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
DE4041276C1 (ko) * | 1990-12-21 | 1992-02-27 | Siemens Ag, 8000 Muenchen, De | |
US5229331A (en) * | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5259799A (en) * | 1992-03-02 | 1993-11-09 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5232549A (en) * | 1992-04-14 | 1993-08-03 | Micron Technology, Inc. | Spacers for field emission display fabricated via self-aligned high energy ablation |
-
1993
- 1993-01-06 KR KR93000083A patent/KR960009127B1/ko not_active IP Right Cessation
- 1993-08-30 US US08/114,134 patent/US5401676A/en not_active Expired - Fee Related
- 1993-09-20 FR FR9311173A patent/FR2700222B1/fr not_active Expired - Fee Related
- 1993-11-12 JP JP30610793A patent/JP2767373B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2700222A1 (fr) | 1994-07-08 |
US5401676A (en) | 1995-03-28 |
JPH06231675A (ja) | 1994-08-19 |
FR2700222B1 (fr) | 1995-03-24 |
KR940018911A (ko) | 1994-08-19 |
JP2767373B2 (ja) | 1998-06-18 |
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Legal Events
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020628 Year of fee payment: 7 |
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LAPS | Lapse due to unpaid annual fee |