KR960005050B1 - 게이트터언오프다이리스터의 터언오프제어회로 - Google Patents

게이트터언오프다이리스터의 터언오프제어회로 Download PDF

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Publication number
KR960005050B1
KR960005050B1 KR1019870011205A KR870011205A KR960005050B1 KR 960005050 B1 KR960005050 B1 KR 960005050B1 KR 1019870011205 A KR1019870011205 A KR 1019870011205A KR 870011205 A KR870011205 A KR 870011205A KR 960005050 B1 KR960005050 B1 KR 960005050B1
Authority
KR
South Korea
Prior art keywords
transistor
turn
gto
diode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019870011205A
Other languages
English (en)
Korean (ko)
Other versions
KR880005752A (ko
Inventor
마사유끼 와다
조오지 시이나
다다아끼 가리야
다쓰오 시무라
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
미다 가쓰시게
히다찌 하라마찌 덴시고오교오 가부시기가이샤
히데오 나가이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼, 미다 가쓰시게, 히다찌 하라마찌 덴시고오교오 가부시기가이샤, 히데오 나가이 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR880005752A publication Critical patent/KR880005752A/ko
Application granted granted Critical
Publication of KR960005050B1 publication Critical patent/KR960005050B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/731—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents with inductive load

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  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
KR1019870011205A 1986-10-08 1987-10-06 게이트터언오프다이리스터의 터언오프제어회로 Expired - Fee Related KR960005050B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP237979 1986-10-08
JP61237979A JPS6393218A (ja) 1986-10-08 1986-10-08 ゲ−トタ−ンオフサイリスタのタ−ンオフ回路
JP86-237979 1986-10-08

Publications (2)

Publication Number Publication Date
KR880005752A KR880005752A (ko) 1988-06-28
KR960005050B1 true KR960005050B1 (ko) 1996-04-18

Family

ID=17023310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870011205A Expired - Fee Related KR960005050B1 (ko) 1986-10-08 1987-10-06 게이트터언오프다이리스터의 터언오프제어회로

Country Status (3)

Country Link
US (1) US4758942A (enExample)
JP (1) JPS6393218A (enExample)
KR (1) KR960005050B1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744015B2 (ja) * 1988-06-16 1998-04-28 株式会社日立製作所 半導体スイツチング装置
US6426666B1 (en) * 1999-11-10 2002-07-30 Virginia Tech Intellectual Properties, Inc. Diode-assisted gate turn-off thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117351A (en) * 1977-03-31 1978-09-26 Rca Corporation Transistor switching circuit
CA1126812A (en) * 1977-08-10 1982-06-29 Yasuo Matsuda Power conversion apparatus
JPS5914355A (ja) * 1982-07-13 1984-01-25 Hitachi Ltd ゲ−トタ−ンオフサイリスタの駆動回路
JPS5913422A (ja) * 1982-07-14 1984-01-24 Matsushita Electric Ind Co Ltd ゲ−ト・タ−ン・オフ・サイリスタのドライブ回路

Also Published As

Publication number Publication date
JPH0545094B2 (enExample) 1993-07-08
JPS6393218A (ja) 1988-04-23
US4758942A (en) 1988-07-19
KR880005752A (ko) 1988-06-28

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