KR960004213A - 결정형 산화 제2세륨의 제조방법 - Google Patents
결정형 산화 제2세륨의 제조방법 Download PDFInfo
- Publication number
- KR960004213A KR960004213A KR1019950017864A KR19950017864A KR960004213A KR 960004213 A KR960004213 A KR 960004213A KR 1019950017864 A KR1019950017864 A KR 1019950017864A KR 19950017864 A KR19950017864 A KR 19950017864A KR 960004213 A KR960004213 A KR 960004213A
- Authority
- KR
- South Korea
- Prior art keywords
- nitrate
- hydroxide
- aqueous medium
- alkaline material
- potassium
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01D—COMPOUNDS OF ALKALI METALS, i.e. LITHIUM, SODIUM, POTASSIUM, RUBIDIUM, CAESIUM, OR FRANCIUM
- C01D17/00—Rubidium, caesium or francium compounds
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S516/00—Colloid systems and wetting agents; subcombinations thereof; processes of
- Y10S516/01—Wetting, emulsifying, dispersing, or stabilizing agents
- Y10S516/02—Organic and inorganic agents containing, except water
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Composite Materials (AREA)
- Geology (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
본 발명은 반도체 제조용의 연마 물질이나 광택 물질 혹은 플라스틱, 유리 등의 UV선-흡수 물질로 사용되는 산화 제2세륨 입자를 제조하기 위한 방법을 제공하는 것이다. 본 발명은 입자 크기가 0.03㎛-5㎛인 산화제2세륨 입자의 제조방법에 관한 것으로, 그 방법의 구성은 수산화 제2세륨과 질산염을 함유하는 수성매질을 압칼리성 물질을 써서 pH가 8~11이 되도록 맞추기 그리고 가압하에서 100~200℃의 온도에서 상기 수성매질을 가열하는 것으로 되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 수산화 제2세륨과 질산염을 함유하는 수성매질을 pH가 8~11이 되게 알카리성 물질로 맞추고, 가압하의 100~200℃의 온도에서 상기 수성매질을 가열하는 것으로 구성됨을 특징으로 하는 입자크기가 0.03㎛-5㎛인 산화 제2세륨 입자의 제조 방법.
- 제1항에 있어서, 수산화 제2세륨과 질산염이 몰비 [NO3 -]/[Ce4+]=1~6으로 상기 수성매질에 존재하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 질산염은 질산암모늄, 질산나트륨, 질산칼륨 혹은 그것들의 혼합물인 것을 특징으로 하는 방법.
- 제2항에 있어서, 질산염은 질산암모늄, 질산나트륨, 질산칼륨 혹은 그것들의 혼합물인 것을 특징으로 하는 방법.
- 제1항에 있어서, 알카리성 물질은 암모니아, 수산화 나트륨, 수산화 칼륨 혹은 그것들의 혼합물인 것을 특징으로 하는 방법.
- 제2항에 있어서, 알카리성 물질은 암모니아, 수산화 나트륨, 수산화 칼륨 혹은 그것들의 혼합물인 것을 특징으로 하는 방법.
- 제3항에 있어서, 알카리성 물질은 암모니아, 수산화 나트륨, 수산화 칼륨 혹은 그것들의 혼합물인 것을 특징으로 하는 방법.
- 몰비(NH4 +)/(CeO2)=0.001~1로 4차 암모늄이온 NR4 +(R4=,알킬기)를 결정형 산화 제2륨 입자를 함유하는 수성 분사액에 가하여 안정화시킨 것을 특징으로 하는 입자 크기가 0.03㎛-5㎛인 결정형 산화 제2세륨 입자의 졸.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP94-158479 | 1994-07-11 | ||
JP15847994 | 1994-07-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960004213A true KR960004213A (ko) | 1996-02-23 |
KR100379653B1 KR100379653B1 (ko) | 2003-06-11 |
Family
ID=15672645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017864A KR100379653B1 (ko) | 1994-07-11 | 1995-06-28 | 결정형산화제2세륨의제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5543126A (ko) |
KR (1) | KR100379653B1 (ko) |
TW (1) | TW311905B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
Families Citing this family (33)
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US5962343A (en) | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
EP2164095A1 (en) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of polishing substrates |
JP3333699B2 (ja) * | 1996-11-22 | 2002-10-15 | 仲道 山崎 | 連続水熱反応における原料粒子噴霧方法および装置 |
JP3359535B2 (ja) * | 1997-04-25 | 2002-12-24 | 三井金属鉱業株式会社 | 半導体装置の製造方法 |
SG72802A1 (en) * | 1997-04-28 | 2000-05-23 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
US6572449B2 (en) | 1998-10-06 | 2003-06-03 | Rodel Holdings, Inc. | Dewatered CMP polishing compositions and methods for using same |
US6241586B1 (en) | 1998-10-06 | 2001-06-05 | Rodel Holdings Inc. | CMP polishing slurry dewatering and reconstitution |
US6447693B1 (en) | 1998-10-21 | 2002-09-10 | W. R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces |
KR100748995B1 (ko) | 1998-10-21 | 2007-08-13 | 더블유.알. 그레이스 앤드 캄파니-콘. | 마모성 무기 산화물 입자의 슬러리 및 이러한 입자의마모성을 조절하기 위한 방법 |
EP1201725A4 (en) * | 1999-06-28 | 2007-09-12 | Nissan Chemical Ind Ltd | ABRASIVE COMPOUND FOR HARD DISK GLASS TRAY |
US6204219B1 (en) * | 1999-07-29 | 2001-03-20 | W. R. Grace & Co.-Conn. | Thermally stable support material and method for making the same |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
WO2002028979A1 (fr) * | 2000-10-02 | 2002-04-11 | Mitsui Mining & Smelting Co.,Ltd. | Matiere abrasive a base de cerium et procede de production de ladite matiere |
AU2002359356A1 (en) * | 2001-11-16 | 2003-06-10 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US6596042B1 (en) * | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
KR100511943B1 (ko) * | 2003-05-22 | 2005-09-01 | 한화석유화학 주식회사 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
KR100787346B1 (ko) | 2005-08-31 | 2007-12-18 | 주식회사 엘지화학 | 산화세륨의 제조방법 |
CN100357362C (zh) * | 2005-12-26 | 2007-12-26 | 内蒙古科技大学 | 一种抛光用超细氧化铈的制备方法 |
KR101455123B1 (ko) * | 2006-12-28 | 2014-10-27 | 다우 코닝 도레이 캄파니 리미티드 | 가열 경화성 실리콘 고무 조성물 |
US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
KR20120094896A (ko) * | 2009-07-06 | 2012-08-27 | 몰리코프 미네랄스, 엘엘씨 | 상처 드레싱에서 항균 장벽 및 살균제로 이용되는 세리아 |
US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
CN102730740B (zh) * | 2012-07-06 | 2014-03-12 | 南京信息工程大学 | 一种制备立方晶系氧化铈纳米晶的方法 |
JP2015143332A (ja) | 2013-12-24 | 2015-08-06 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
EP3113859A4 (en) | 2014-03-07 | 2017-10-04 | Secure Natural Resources LLC | Cerium (iv) oxide with exceptional arsenic removal properties |
SG11201908858SA (en) | 2017-03-27 | 2019-10-30 | Hitachi Chemical Co Ltd | Slurry and polishing method |
WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
CN109022767A (zh) * | 2018-09-28 | 2018-12-18 | 中国恩菲工程技术有限公司 | 稀土沉淀装置和稀土沉淀方法 |
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FR2617153B1 (fr) * | 1987-06-26 | 1991-04-05 | Rhone Poulenc Chimie | Procede d'obtention d'un oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
FR2617154B1 (fr) * | 1987-06-29 | 1990-11-30 | Rhone Poulenc Chimie | Procede d'obtention d'oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
JP2777044B2 (ja) * | 1993-04-19 | 1998-07-16 | 日産化学工業株式会社 | バリウムフェライト微粒子の製造方法 |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
-
1995
- 1995-06-14 TW TW084106073A patent/TW311905B/zh not_active IP Right Cessation
- 1995-06-15 US US08/490,612 patent/US5543126A/en not_active Expired - Lifetime
- 1995-06-28 KR KR1019950017864A patent/KR100379653B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100379653B1 (ko) | 2003-06-11 |
US5543126A (en) | 1996-08-06 |
TW311905B (ko) | 1997-08-01 |
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