KR960002881A - 반도체 소자의 비.피.에스.지 막 제조방법 - Google Patents

반도체 소자의 비.피.에스.지 막 제조방법 Download PDF

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Publication number
KR960002881A
KR960002881A KR1019940013729A KR19940013729A KR960002881A KR 960002881 A KR960002881 A KR 960002881A KR 1019940013729 A KR1019940013729 A KR 1019940013729A KR 19940013729 A KR19940013729 A KR 19940013729A KR 960002881 A KR960002881 A KR 960002881A
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South Korea
Prior art keywords
bpsg film
temperature
heat treatment
manufacturing
film
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Application number
KR1019940013729A
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English (en)
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KR0135706B1 (ko
Inventor
김진태
권오성
박영택
오영균
김의식
홍홍기
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940013729A priority Critical patent/KR0135706B1/ko
Publication of KR960002881A publication Critical patent/KR960002881A/ko
Application granted granted Critical
Publication of KR0135706B1 publication Critical patent/KR0135706B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 BPSG막 제조방법에 관한것으로서, BPSG막이 형성되어 있는 반도체기판을 고온 화학기상증착로에 장착한 후, 질소 분위기에서 소저의 열처리온도까지 상승시키고 진공상태에서 20±10 분 정도 열처리하여 BPSG막 표면의 보론원자를 외부로 확산시켜 제거하고, 다시 질소 분위기에서 BPSG막을 재유동시킨 후, 온도를 내려 BPSG막이 고온상태에서 대기와 접촉되지 않도록 하였으므로, BPSG막의 보론이 산소와 결합하여 격자결함이 생성되는 것을 방지하고, BPSG의 유동성이 떨어지는 것을 방지하여 공정수율 및 소자 동작의 신뢰성을 향상된다.

Description

반도체 소자의 비.피.에스.지 막 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. BPSG막이 형성되어 있는 반도체기판을 소정 온도의 고온 화학기상증착로에 장착하고 질소 분위기에서 열처리 온도까지 온도를 상승시키는 공정과, 상기 예정된 열처리 온도에서 진공 분위기를 예정된 시간동안 유지하여 BPSG막 표면의 보론원자를 대기중으로 확산시키는 공정과, 상기 BPSG막을 질소 분위기에서 열처리하여 상기 BPSG막을 재유동시키는 공정과, 상기 구조의 반도체기판을 질소 분위기에서 온도를 내리는 공정을 구비하는 반도체소자의 BPSG막 제조방법.
  2. 제 1 항에 있어서, 상기 열처리 시간을 20±10 분 정도로 하는 것을 특징으로 하는 반도체소자의 BPSG막 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013729A 1994-06-17 1994-06-17 반도체 소자의 비.피.에스.지 막 제조방법 KR0135706B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013729A KR0135706B1 (ko) 1994-06-17 1994-06-17 반도체 소자의 비.피.에스.지 막 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013729A KR0135706B1 (ko) 1994-06-17 1994-06-17 반도체 소자의 비.피.에스.지 막 제조방법

Publications (2)

Publication Number Publication Date
KR960002881A true KR960002881A (ko) 1996-01-26
KR0135706B1 KR0135706B1 (ko) 1998-04-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013729A KR0135706B1 (ko) 1994-06-17 1994-06-17 반도체 소자의 비.피.에스.지 막 제조방법

Country Status (1)

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KR (1) KR0135706B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100256232B1 (ko) * 1997-06-30 2000-05-15 김영환 반도체소자의층간절연막형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100256232B1 (ko) * 1997-06-30 2000-05-15 김영환 반도체소자의층간절연막형성방법

Also Published As

Publication number Publication date
KR0135706B1 (ko) 1998-04-24

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