KR960001784B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR960001784B1
KR960001784B1 KR1019920001096A KR920001096A KR960001784B1 KR 960001784 B1 KR960001784 B1 KR 960001784B1 KR 1019920001096 A KR1019920001096 A KR 1019920001096A KR 920001096 A KR920001096 A KR 920001096A KR 960001784 B1 KR960001784 B1 KR 960001784B1
Authority
KR
South Korea
Prior art keywords
bit line
memory cell
sense amplifier
line pair
short side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920001096A
Other languages
English (en)
Korean (ko)
Other versions
KR920015375A (ko
Inventor
다께시 후꾸다
Original Assignee
닛본덴기 가부시끼가이샤
세끼모또 타다히로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛본덴기 가부시끼가이샤, 세끼모또 타다히로 filed Critical 닛본덴기 가부시끼가이샤
Publication of KR920015375A publication Critical patent/KR920015375A/ko
Application granted granted Critical
Publication of KR960001784B1 publication Critical patent/KR960001784B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1019920001096A 1991-01-25 1992-01-25 반도체 기억 장치 Expired - Fee Related KR960001784B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2550691 1991-01-25
JP91-25506 1991-01-25
JP91-025506 1991-01-25

Publications (2)

Publication Number Publication Date
KR920015375A KR920015375A (ko) 1992-08-26
KR960001784B1 true KR960001784B1 (ko) 1996-02-05

Family

ID=12167955

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920001096A Expired - Fee Related KR960001784B1 (ko) 1991-01-25 1992-01-25 반도체 기억 장치

Country Status (4)

Country Link
US (1) US5315138A (enExample)
EP (1) EP0496406B1 (enExample)
KR (1) KR960001784B1 (enExample)
DE (1) DE69229067T2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172169A (ja) * 1994-12-16 1996-07-02 Toshiba Microelectron Corp 半導体記憶装置
US7948094B2 (en) * 2007-10-22 2011-05-24 Rohm Co., Ltd. Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
US4506347A (en) * 1981-02-20 1985-03-19 Mostek Corporation Placement of clock circuits for semiconductor memory
JPH0752757B2 (ja) * 1985-04-12 1995-06-05 株式会社日立製作所 半導体記憶装置
US4926224A (en) * 1988-06-03 1990-05-15 Texas Instruments Incorporated Crosspoint dynamic ram cell for folded bitline array
JPH07109878B2 (ja) * 1988-11-16 1995-11-22 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
US5315138A (en) 1994-05-24
KR920015375A (ko) 1992-08-26
DE69229067T2 (de) 1999-12-09
EP0496406B1 (en) 1999-05-06
DE69229067D1 (de) 1999-06-10
EP0496406A2 (en) 1992-07-29
EP0496406A3 (enExample) 1994-03-16

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