KR960001108B1 - 리미터를 구비한 다이나믹 랜덤 억세스 메모리 장치 - Google Patents

리미터를 구비한 다이나믹 랜덤 억세스 메모리 장치 Download PDF

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Publication number
KR960001108B1
KR960001108B1 KR1019910003179A KR910003179A KR960001108B1 KR 960001108 B1 KR960001108 B1 KR 960001108B1 KR 1019910003179 A KR1019910003179 A KR 1019910003179A KR 910003179 A KR910003179 A KR 910003179A KR 960001108 B1 KR960001108 B1 KR 960001108B1
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KR
South Korea
Prior art keywords
coupled
data signal
field effect
voltage source
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910003179A
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English (en)
Korean (ko)
Inventor
아끼히꼬 가가미
Original Assignee
니뽄 덴끼 가부시끼가이샤
세끼모또 다다히로
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Publication date
Application filed by 니뽄 덴끼 가부시끼가이샤, 세끼모또 다다히로 filed Critical 니뽄 덴끼 가부시끼가이샤
Application granted granted Critical
Publication of KR960001108B1 publication Critical patent/KR960001108B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

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  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019910003179A 1990-03-02 1991-02-27 리미터를 구비한 다이나믹 랜덤 억세스 메모리 장치 Expired - Fee Related KR960001108B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50892 1990-03-02
JP2050892A JPH03252988A (ja) 1990-03-02 1990-03-02 ダイナミック型半導体メモリ

Publications (1)

Publication Number Publication Date
KR960001108B1 true KR960001108B1 (ko) 1996-01-18

Family

ID=12871385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910003179A Expired - Fee Related KR960001108B1 (ko) 1990-03-02 1991-02-27 리미터를 구비한 다이나믹 랜덤 억세스 메모리 장치

Country Status (5)

Country Link
US (1) US5295099A (https=)
EP (1) EP0444707B1 (https=)
JP (1) JPH03252988A (https=)
KR (1) KR960001108B1 (https=)
DE (1) DE69112668T2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740063B2 (ja) * 1990-10-15 1998-04-15 株式会社東芝 半導体記憶装置
JP2812097B2 (ja) * 1992-09-30 1998-10-15 日本電気株式会社 半導体記憶装置
JP2870328B2 (ja) * 1992-11-12 1999-03-17 日本電気株式会社 不揮発性半導体記憶装置
JP3359209B2 (ja) * 1995-11-29 2002-12-24 シャープ株式会社 半導体記憶装置及びメモリアクセス方法
JP4580784B2 (ja) * 2005-03-09 2010-11-17 株式会社東芝 半導体記憶装置及びそのデータ読み出し方法
US7796446B2 (en) * 2008-09-19 2010-09-14 Qimonda Ag Memory dies for flexible use and method for configuring memory dies
CN111912884B (zh) * 2020-08-13 2023-09-08 南京智行信息科技有限公司 桥梁加固复合材料损伤识别系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592996B2 (ja) * 1976-05-24 1984-01-21 株式会社日立製作所 半導体記憶回路
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
JP2609211B2 (ja) * 1987-03-16 1997-05-14 シーメンス・アクチエンゲゼルシヤフト メモリセルの検査回路装置および方法
JPS6423490A (en) * 1987-07-17 1989-01-26 Sony Corp Memory
JP2644261B2 (ja) * 1988-03-15 1997-08-25 株式会社東芝 ダイナミック型半導体記憶装置

Also Published As

Publication number Publication date
DE69112668D1 (de) 1995-10-12
EP0444707A3 (https=) 1994-03-30
JPH03252988A (ja) 1991-11-12
US5295099A (en) 1994-03-15
DE69112668T2 (de) 1996-05-02
EP0444707A2 (en) 1991-09-04
EP0444707B1 (en) 1995-09-06

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