KR950703197A - 임의 접근기억장치(RAM) 내 통과(paa) 트랜지스터의 일치활성화(COINCIDENT ACTIVATION OF PASS TRANSISTORS IN A RANDOM ACCESS MEMORY) - Google Patents
임의 접근기억장치(RAM) 내 통과(paa) 트랜지스터의 일치활성화(COINCIDENT ACTIVATION OF PASS TRANSISTORS IN A RANDOM ACCESS MEMORY)Info
- Publication number
- KR950703197A KR950703197A KR1019950700835A KR19950700835A KR950703197A KR 950703197 A KR950703197 A KR 950703197A KR 1019950700835 A KR1019950700835 A KR 1019950700835A KR 19950700835 A KR19950700835 A KR 19950700835A KR 950703197 A KR950703197 A KR 950703197A
- Authority
- KR
- South Korea
- Prior art keywords
- random access
- access memory
- pass transistors
- coincident
- activation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94029992A | 1992-09-03 | 1992-09-03 | |
| PCT/US1993/008232 WO1994006120A1 (en) | 1992-09-03 | 1993-08-30 | Coincident activation of pass transistors in a random access memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950703197A true KR950703197A (ko) | 1995-08-23 |
Family
ID=25474589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950700835A KR950703197A (ko) | 1992-09-03 | 1995-03-02 | 임의 접근기억장치(RAM) 내 통과(paa) 트랜지스터의 일치활성화(COINCIDENT ACTIVATION OF PASS TRANSISTORS IN A RANDOM ACCESS MEMORY) |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0662235A1 (ko) |
| JP (1) | JPH08501179A (ko) |
| KR (1) | KR950703197A (ko) |
| AU (1) | AU4843593A (ko) |
| CA (1) | CA2141860A1 (ko) |
| WO (1) | WO1994006120A1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619447A (en) * | 1995-05-02 | 1997-04-08 | Motorola, Inc. | Ferro-electric memory array architecture and method for forming the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3638202A (en) * | 1970-03-19 | 1972-01-25 | Bell Telephone Labor Inc | Access circuit arrangement for equalized loading in integrated circuit arrays |
| US3629612A (en) * | 1970-09-18 | 1971-12-21 | Rca Corp | Operation of field-effect transistor circuit having substantial distributed capacitance |
| US3893087A (en) * | 1974-02-08 | 1975-07-01 | Gen Instrument Corp | Random access memory with shared column conductors |
| US5163022A (en) * | 1989-01-23 | 1992-11-10 | Hitachi, Ltd. | Semiconductor cell memory with current sensing |
| JPH03259495A (ja) * | 1990-03-07 | 1991-11-19 | Matsushita Electric Ind Co Ltd | スタティックｒａｍ |
-
1993
- 1993-08-30 EP EP93921284A patent/EP0662235A1/en not_active Withdrawn
- 1993-08-30 JP JP6507418A patent/JPH08501179A/ja active Pending
- 1993-08-30 WO PCT/US1993/008232 patent/WO1994006120A1/en not_active Application Discontinuation
- 1993-08-30 AU AU48435/93A patent/AU4843593A/en not_active Abandoned
- 1993-08-30 CA CA002141860A patent/CA2141860A1/en not_active Abandoned
-
1995
- 1995-03-02 KR KR1019950700835A patent/KR950703197A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0662235A1 (en) | 1995-07-12 |
| WO1994006120A1 (en) | 1994-03-17 |
| CA2141860A1 (en) | 1994-03-17 |
| JPH08501179A (ja) | 1996-02-06 |
| AU4843593A (en) | 1994-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |