KR950035336A - 반도체 제조용 기기 및 그 제조방법 - Google Patents

반도체 제조용 기기 및 그 제조방법 Download PDF

Info

Publication number
KR950035336A
KR950035336A KR1019950000606A KR19950000606A KR950035336A KR 950035336 A KR950035336 A KR 950035336A KR 1019950000606 A KR1019950000606 A KR 1019950000606A KR 19950000606 A KR19950000606 A KR 19950000606A KR 950035336 A KR950035336 A KR 950035336A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor
polycarbodiimide resin
glassy carbon
wafer
Prior art date
Application number
KR1019950000606A
Other languages
English (en)
Other versions
KR100315135B1 (ko
Inventor
가즈오 사이토
다케시 이시마쯔
Original Assignee
모치쓰키 아키히로
닛신 보세키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5464694A external-priority patent/JPH07240387A/ja
Priority claimed from JP5464594A external-priority patent/JPH07240401A/ja
Application filed by 모치쓰키 아키히로, 닛신 보세키 가부시키가이샤 filed Critical 모치쓰키 아키히로
Publication of KR950035336A publication Critical patent/KR950035336A/ko
Application granted granted Critical
Publication of KR100315135B1 publication Critical patent/KR100315135B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C04B35/524—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from polymer precursors, e.g. glass-like carbon material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본질적으로 폴리카르보디이미드 수지로부터 유도된 유리질탄소로 이루어지는 반도체 제조용 기기와 반도체의 제조용 기기의 형상에 폴리카르보디이미드 수지 또는 주로 폴리카르보디이미드 수지로 구성된 조성물을 성형하고, 다음에, 성형물질을 탄화하여 되는 반도체 제조용 기기의 제조방법을 제공한다.
반도체 제조용 기기의 종래의 기기의 문제점을 해결하고, 비용이 저렴하고 용이하게 고순도로 제조할 수 있다.

Description

반도체 제조용 기기 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 반도체 웨이퍼 지지용 부우트의 1예의 측면도.

Claims (12)

  1. 본질적으로 폴리카르보디이미드 수지로부터 유도된 유리질탄소로 이루어지는 반도체 제조용 기기.
  2. 제1항에 있어서, 기기는 반도체용 지그인 반도체 제조용 기기.
  3. 제2항에 있어서, 지그는 웨이퍼 핸드 또는 웨이퍼홀더인 반도체 제조용 기기.
  4. 제1항에 있어서, 기기는 반도체 웨이퍼 더미인 반도체 제조용 기기.
  5. 제1항에 있어서, 기기는 반도체 웨이퍼 지지용 보우트인 반도체 제조용 기기.
  6. 제5항에 있어서, 보우트는 주 부재로서, 반도체 웨이퍼를 지지하기 위한 홈을 각각 가지는 지지로드와, 상기 지지로드를 고정하기 위한 고정판으로 구성되는 반도체 제조용 기기.
  7. 제1항에 있어서, 유리질탄소는 불활성가스 분위기하에서 폴리카르보디이미드 수지를 탄화함으로써 형성되는 반도체 제조용 기기.
  8. 제6항에 있어서, 성형물질의 탄화는 1,000-3,000℃의 온도범위내에서 행하여지는 반도체 제조용 기기.
  9. 제1항에 있어서, 유리질탄소는 1.51-1.8g/㎤의 벌크밀도, 1,800-4,000㎏/㎡의 굴곡강도, 121-410의 쇼어경도, 0-0.09%의 다공도 및 0-4ppm의 회분을 가지는 반도체 제조용 기기.
  10. 반도체의 제조용 기기의 형상에 폴리카르보디이미드 수지 또는 주로 폴리카르보디미니드 수지로 구성된 조성물을 성형하고, 다음에, 진공 또는 불활성가스 분위기하에서 성형물질을 탄화하여 되는 반도체 제조용 기기의 제조방법.
  11. 제10항에 있어서, 성형물질의 탄화는 1,000-3,000℃의 온도 범위내에서 행하여지는 반도체 제조용 기기.
  12. 플라즈마 에칭장치의 실안쪽에, 본질적으로 폴리카르보디이미드 수지로부터 유도된 유리질 탄소로 이루어진 웨이퍼 더미를 고정하고, 다음에 실안쪽에 플라즈마를 발생시켜 되는 플라즈마 에칭실내등의 클리닝 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950000606A 1994-01-18 1995-01-16 반도체 제조용 기기 및 그 제조방법 KR100315135B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1903494 1994-01-18
JP94-19034 1994-01-18
JP5464694A JPH07240387A (ja) 1994-02-28 1994-02-28 半導体ウエハ支持ボート及びその構成部材の製造方法
JP5464594A JPH07240401A (ja) 1994-02-28 1994-02-28 半導体ウエハダミー、その製造方法及び前記半導体ウエハダミーによるプラズマエッチングチャンバー内等の清浄方法
JP94-54645 1994-02-28
JP94-54646 1994-02-28

Publications (2)

Publication Number Publication Date
KR950035336A true KR950035336A (ko) 1995-12-30
KR100315135B1 KR100315135B1 (ko) 2002-02-28

Family

ID=27282464

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950000606A KR100315135B1 (ko) 1994-01-18 1995-01-16 반도체 제조용 기기 및 그 제조방법

Country Status (4)

Country Link
EP (1) EP0663687B1 (ko)
KR (1) KR100315135B1 (ko)
CA (1) CA2140395A1 (ko)
DE (1) DE69500394T2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
JPH08316283A (ja) * 1995-05-19 1996-11-29 Kobe Steel Ltd ダミーウエハー
JP2000269159A (ja) * 1999-03-19 2000-09-29 Ube Ind Ltd 半導体としての多種の機能を持つカ−ボンの製法
DE102008023609A1 (de) * 2008-05-15 2009-11-19 Siced Electronics Development Gmbh & Co. Kg Verfahren zum thermischen Ausheilen und elektrischen Aktivieren implantierter Siliziumcarbidhalbleiter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05262510A (ja) * 1992-03-16 1993-10-12 Denki Kagaku Kogyo Kk 治 具

Also Published As

Publication number Publication date
DE69500394D1 (de) 1997-08-14
CA2140395A1 (en) 1995-07-19
EP0663687A1 (en) 1995-07-19
KR100315135B1 (ko) 2002-02-28
DE69500394T2 (de) 1997-10-23
EP0663687B1 (en) 1997-07-09

Similar Documents

Publication Publication Date Title
Niihara et al. The effect of stoichiometry on mechanical properties of boron carbide
US20050039650A1 (en) Chamber support for pyrolytic waste treatment system
KR20050035085A (ko) 고순도 탄소계 재료와 세라믹스막 피복 고순도 탄소계 재료
EA200501759A1 (ru) Способ получения пористого материала на основе углерода
BR0308835A (pt) Corpos de mulita e métodos para formar corpos de mulita
KR950035336A (ko) 반도체 제조용 기기 및 그 제조방법
KR950005777A (ko) 세라믹 입자체로 부터의 결합제의 열적 제거방법
Anwar et al. Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review
DE3880889D1 (de) Verfahren zur silicierung von poroesen formkoerpern aus siliciumcarbid/kohlenstoff.
KR890011808A (ko) 고밀도 SiC 소결체의 제조방법
RU2005103321A (ru) Способ изготовления изделия, содержащего кремниевую подложку с пленкой из карбида кремния на ее поверхности
KR950034491A (ko) 서셉터(suscepter) 및 그 제조방법
DE3367763D1 (en) Method of manufacturing a dense polycrystalline silicon carbide article
Ustin et al. Supersonic jet epitaxy of silicon carbide on silicon using methylsilane
KR950034094A (ko) 자기 기록 매체용 기판 및 그 제조 방법
JPH0323209A (ja) 炭素質成形断熱体
KR890008939A (ko) 세로형 기상(氣相) 성장 장치 및 방법
GB2222345A (en) Carbon diaphragm
EP0803485A3 (en) Process for production of silicon carbide shaped material
Grant et al. Auger studies of cleaved (111) silicon surfaces
Han et al. Fracture properties of nuclear graphite grade IG-110
Vogli et al. Wood derived porous and cellular ceramics
RU2005124203A (ru) Способ изготовления изделия, содержащего кремниевую подложку с пленкой из карбида кремния на ее поверхности
KR890017767A (ko) 탄화규소질 반응관
Edelson et al. Method for removing surface porosity on glassy carbon tiles

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20041013

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee