KR950034542A - 열처리장치 - Google Patents

열처리장치 Download PDF

Info

Publication number
KR950034542A
KR950034542A KR1019950008475A KR19950008475A KR950034542A KR 950034542 A KR950034542 A KR 950034542A KR 1019950008475 A KR1019950008475 A KR 1019950008475A KR 19950008475 A KR19950008475 A KR 19950008475A KR 950034542 A KR950034542 A KR 950034542A
Authority
KR
South Korea
Prior art keywords
heat treatment
treatment apparatus
space
reaction tube
heat
Prior art date
Application number
KR1019950008475A
Other languages
English (en)
Other versions
KR100315136B1 (ko
Inventor
다모쓰 모리모토
Original Assignee
이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤 filed Critical 이노우에 아키라
Publication of KR950034542A publication Critical patent/KR950034542A/ko
Application granted granted Critical
Publication of KR100315136B1 publication Critical patent/KR100315136B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Furnace Details (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)

Abstract

반도체 웨이퍼를 가열하여 피처리체에 대하여 소정의 열처리를 행하는 열처리장치는, 웨이퍼를 수용하는 반응관과, 반응관의 주위에 설치되고, 반응관내를 가열하기 위한 발열체와, 발열체의 주위에 각각 기밀한 공간을 통해서 동심형상으로 설치된 통형상을 이루는 여러개의 열복사부재와, 이들 공간을 감압하는 감압장치를 구비한다.
이 열처리장치는, 적어도 반응관내를 승온시킬 때에는 감압수단에 의해서 발열체 내측의 열복사부재 및 각 열사복사부재간의 공간을 감압한다.

Description

열처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 한 실시형태에 관계되는 열처리장치를 나타낸 단면도.

Claims (14)

  1. 피처리체를 가열하여 피처리체에 대하여 소정의 열처리를 행하는 열처리장치로서, 피처리체를 수용하는 반응관과, 반응관의 주위에 설치되고, 상기 반응관내를 가열하기 위한 발열체와, 상기 발열체의 주위에 기밀한 공간을 통해서 설치된 열복사부재와, 상기 공간을 감압하는 감압수단을 구비하며, 적어도 상기 반응관내를 승온시킬 때에는 상기 감압수단에 의해서 상기 공간을 감압하는 처리장치.
  2. 제1항에 있어서, 상기 공간에 가스를 도입하는 가스도입수단을 가지는 것을 특징으로 하는 열처리장치.
  3. 제1항에 있어서, 상기 반응과, 발열체 및 열복사부재는 통형상을 이루고, 이들이 동심형상으로 설치되어 있는 것을 특징으로 하는 열처리장치.
  4. 제1항에 있어서, 상기 열복사부재는 1~10mm의 두께를 가지고 있는 것을 특징으로 하는 열처리장치.
  5. 제1항에 있어서, 상기 열복사부재는 50%이상의 반사율을 가지고 있는 것을 특징으로 하는 열처리장치.
  6. 제1항에 있어서, 상기 열복사부재는 알루미늄 또는 텅스텐으로 형성되어 있는 것을 특징으로 하는 열처리장치.
  7. 제1항에 있어서, 상기 감압수단은, 상기 공간을 1mTorr이하의 압력까지 감압하는 것을 특징으로 하는 열처리장치.
  8. 피처리체는 가열하여 피처리체에 대하여 소정의 열처리를 행하는 열처리장치로서, 피처리체를 수용하는 반응관과, 반응관의 주위에 설치되고, 반응관내를 가열하기 위한 발열체와, 상기 발열체의 주위에 각각 기밀한 공간을 통해서 다중적으로 설치된 여러개의 열복사부재와, 상기 공간을 감압하는 감압수단을 구비하면, 적어도 상기 반응관내를 승온시킬 때에는 상기 감압수단에 의해서 상기 공간을 감압하는 처리장치.
  9. 제8항에 있어서, 상기 공간에 가스를 도입하는 가스도입수단을 가지는 것을 특징으로 하는 열처리장치.
  10. 제8항에 있어서, 상기 반응관, 발열체 및 열복사부재는 통형상을 이루고, 이들이 동심형상으로 설치되어 있는 것을 특징으로 하는 열처리장치.
  11. 제8항에 있어서, 상기 열복사부재는 1~10mm의 두께를 가지고 있는 것을 특징으로 하는 열처리장치.
  12. 제8항에 있어서, 상기 열복사부재는 50%이상의 반사율을 가지고 있는 것을 특징으로 하는 열처리장치.
  13. 제8항에 있어서, 상기 열복사부재는 알루미늄 또는 텅스텐으로 형성되어 있는 것을 특징으로 하는 열처리장치.
  14. 제8항에 있어서, 상기 감압수단은, 상기 공간을 1mTorr이하의 압력까지 감압하는 것을 특징으로 하는 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008475A 1994-04-12 1995-04-12 열처리장치 KR100315136B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09934894A JP3474258B2 (ja) 1994-04-12 1994-04-12 熱処理装置及び熱処理方法
JP94-99348 1994-04-12

Publications (2)

Publication Number Publication Date
KR950034542A true KR950034542A (ko) 1995-12-28
KR100315136B1 KR100315136B1 (ko) 2002-07-27

Family

ID=14245118

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950008475A KR100315136B1 (ko) 1994-04-12 1995-04-12 열처리장치

Country Status (4)

Country Link
US (1) US5567152A (ko)
JP (1) JP3474258B2 (ko)
KR (1) KR100315136B1 (ko)
TW (1) TW283255B (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3471144B2 (ja) * 1995-09-06 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置及びその断熱構造体並びに遮熱板
JP3109433B2 (ja) * 1996-03-22 2000-11-13 株式会社村田製作所 セラミック成形体の焼成方法および焼成装置
JPH09260364A (ja) * 1996-03-26 1997-10-03 Tokyo Electron Ltd 熱処理方法および熱処理装置
AU1358097A (en) * 1997-01-07 1998-08-03 Silicon Valley Group, Inc. Thermal processing apparatus and process
US5904478A (en) * 1997-03-07 1999-05-18 Semitool, Inc. Semiconductor processing furnace heating subassembly
KR100244484B1 (ko) * 1997-07-02 2000-02-01 김영환 반도체소자의 제조방법
US6407367B1 (en) * 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
JP3472482B2 (ja) * 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
US6191388B1 (en) * 1998-11-18 2001-02-20 Semitool, Inc. Thermal processor and components thereof
JP3884201B2 (ja) * 1999-11-29 2007-02-21 株式会社神戸製鋼所 高温高圧処理装置
US6246031B1 (en) * 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6727194B2 (en) * 2002-08-02 2004-04-27 Wafermasters, Inc. Wafer batch processing system and method
CN1748285B (zh) * 2002-12-17 2010-04-28 应用材料有限公司 用于均匀加热基片的腔室
US20080081112A1 (en) * 2006-09-29 2008-04-03 Paul Brabant Batch reaction chamber employing separate zones for radiant heating and resistive heating
DE102008061871B4 (de) * 2008-12-15 2012-10-31 Heraeus Quarzglas Gmbh & Co. Kg Schmelztiegel für den Einsatz in einem Tiegelziehverfahren für Quarzglas
JP5496828B2 (ja) * 2010-08-27 2014-05-21 東京エレクトロン株式会社 熱処理装置
JP5731270B2 (ja) * 2011-05-02 2015-06-10 株式会社ミラプロ 半導体ウェハ処理用減圧処理容器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers
JPH06168899A (ja) * 1992-11-27 1994-06-14 Kokusai Electric Co Ltd 基板加熱用ヒータユニット

Also Published As

Publication number Publication date
JP3474258B2 (ja) 2003-12-08
US5567152A (en) 1996-10-22
KR100315136B1 (ko) 2002-07-27
JPH07283160A (ja) 1995-10-27
TW283255B (ko) 1996-08-11

Similar Documents

Publication Publication Date Title
KR950034542A (ko) 열처리장치
KR910001345A (ko) 열 처리 장치
KR970018244A (ko) 열처리방법
WO2002038191A3 (en) Method of inactivating microorganisms in a fluid using ultraviolet radiation
CA2447853A1 (en) Chemical reaction apparatus and power supply system
PL371733A1 (en) Improved pressure vessel
KR910003758A (ko) 종형(縱型) 처리 장치 및 처리방법
WO1997003236A3 (en) System and method for thermal processing of a semiconductor substrate
KR900019208A (ko) 반도체 웨이퍼의 냉각방법 및 장치
WO2006071517A3 (en) System and method for directing a fluid through a die
EP3321544B1 (en) Vacuum double structure and heat treat furnace
US5292396A (en) Plasma processing chamber
WO2005011450A2 (en) Window arrangement
TW200503053A (en) Thermal treatment system for semiconductors
CN108538752A (zh) 旋转器盖
US7067770B1 (en) Radiant heating system with a high infrared radiant heating capacity, for treatment chambers
KR910003767A (ko) 열처리 장치
CA2507752A1 (en) Soil remedying using a reaction housing
BR9106824A (pt) Bujao de selagem para vaso de pressao
KR20160044804A (ko) 전자파 차폐 기능을 갖는 히팅자켓
CN102618840A (zh) 传送腔室接口用的浮动狭缝阀
KR910005433A (ko) 종형(從型) 열처리 장치
KR900005572A (ko) 처리 방법
JPS5717134A (en) Device for decompression and reaction
KR930019859A (ko) 화학기상 증착장치

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee