KR950032387A - 공유결합의 형성에의한 폴리이미드 표면에 대한 접착 방법 - Google Patents

공유결합의 형성에의한 폴리이미드 표면에 대한 접착 방법 Download PDF

Info

Publication number
KR950032387A
KR950032387A KR1019950004226A KR19950004226A KR950032387A KR 950032387 A KR950032387 A KR 950032387A KR 1019950004226 A KR1019950004226 A KR 1019950004226A KR 19950004226 A KR19950004226 A KR 19950004226A KR 950032387 A KR950032387 A KR 950032387A
Authority
KR
South Korea
Prior art keywords
polyimide surface
polyimide layer
hydroxyl group
polyimide
group amine
Prior art date
Application number
KR1019950004226A
Other languages
English (en)
Other versions
KR100341945B1 (ko
Inventor
케이. 뮤커지 프로산토
Original Assignee
빈센트 비. 인그라시아
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비. 인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR950032387A publication Critical patent/KR950032387A/ko
Application granted granted Critical
Publication of KR100341945B1 publication Critical patent/KR100341945B1/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
    • C08J5/122Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives using low molecular chemically inert solvents, swelling or softening agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12Chemical modification
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31721Of polyimide

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

반도체 장치(12)의 폴리이미드 표면(18)은 폴리이미드 층이 승온 상태에서 하이드록실기 아민 용액으로 예비처리되어서 하부 충전 캡슐재(16)와 반응하는 작용기를 형성하고 경화 공정중에 반도체 장치와 기판(10) 사이의 캡슐재와 폴리이미드 층 사이에 공유결합을 형성한다. 하이드록실기 아민 용액은 65℃에서 60초 동안 N-메틸 파이로리디온과 같은 용매에 용해되는 2,(2-아미노에톡시) 에탄올과 같은 시약을 포함한다. 하이드록실기아민 용액은 폴리이미드층에 용사되거나 증착법으로 증착될수 있다. 처리된 폴리이미드 층을 갖는 반도체다이는 조립체 사이에 틈새를 남겨두고서 DCA 방법으로 기판에 부착된다. 반도체 다이와 기판 사이에 캡슐제가 도입되어 경화되므로써 폴리임드층과의 공유 결합 및 조립체 사이의 외부 밀봉을 형성하여 향상된 접착성을 부여한다.

Description

공유결합의 형성에의한 폴로이미드 표면에 대한 접착 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
본 도면은 기판에 접합된 반도체 장치의 도시도.

Claims (5)

  1. 폴리이미드 표면(18)에 대한 접착 방법에 있어서, 아미노-에스테르와 아미드를 형성하도록 폴리이미드 표면을 예비처리하기 위하여 승온 상태에서 폴리이미드 표면상에 유기 염기 용액을 배치하는 단계를 포함하는 것을 특징으로 하는 폴리이미드 표면에 대한 접착 방법.
  2. 제1항에 있어서, 상기 유기 염기 용액은 하이드록실기 아민 용액인 것을 특징으로 하는 폴리이미드 표면에 대한 접착 방법.
  3. 폴리이미드 표면에 대한 접착 방법에 있어서, 아미노-에스테르 및 아미드기를 형성하도록 폴리이미드 표면을 예비처리하기 위하여 승온 상태에서 폴리이미드 표면상에 하이드록실기 아민 용액을 배치하는 단계와, 폴리이미드 표면상에 에폭시 재료를 배치하는 단계와, 폴리이미드 표면에 공유 결합을 형성하도록 상기 에폭시 재료를 경화하는 단계를 포함하는 것을 특징으로 하는 폴리이미드 표면에 대한 접착 방법
  4. 제3항에 있어서, 상기 캡슐재와 상기 공유 결합을 형성하는 폴리이미드 표면상에 상기 아미노-에스테르 및 아미드기를 형성하도록 50 내지 90℃의 범위에서 상기 하이드록실기 아민용액을 가열하는 단계를 더 포함하는 것을 특징으로 하는 폴리이미드 표면에 대한 접착 방법.
  5. 아미노-에스테르 및 아미드기를 형성하도록 승온 상태에서 하이드록실기 아민 용액으로 예비처리된 폴리이미드 표면(18)과, 상기 접착 표면과 공유 결합을 갖는 캡슐재(16)를 포함하는것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950004226A 1994-04-05 1995-02-24 공유결합의형성에의한폴리이미드표면에대한접착방법 KR100341945B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US223,184 1994-04-05
US08/223,184 US5391397A (en) 1994-04-05 1994-04-05 Method of adhesion to a polyimide surface by formation of covalent bonds

Publications (2)

Publication Number Publication Date
KR950032387A true KR950032387A (ko) 1995-12-20
KR100341945B1 KR100341945B1 (ko) 2002-11-23

Family

ID=22835412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950004226A KR100341945B1 (ko) 1994-04-05 1995-02-24 공유결합의형성에의한폴리이미드표면에대한접착방법

Country Status (5)

Country Link
US (2) US5391397A (ko)
EP (1) EP0676803A3 (ko)
JP (1) JPH07283244A (ko)
KR (1) KR100341945B1 (ko)
CN (1) CN1059913C (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0126792B1 (ko) * 1994-04-11 1998-04-01 김광호 폴리이미드(Polyimide) 표면 처리방법
KR0181615B1 (ko) * 1995-01-30 1999-04-15 모리시다 요이치 반도체 장치의 실장체, 그 실장방법 및 실장용 밀봉재
JPH08335653A (ja) * 1995-04-07 1996-12-17 Nitto Denko Corp 半導体装置およびその製法並びに上記半導体装置の製造に用いる半導体装置用テープキャリア
US5766982A (en) 1996-03-07 1998-06-16 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
US6066509A (en) * 1998-03-12 2000-05-23 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
JP3146345B2 (ja) * 1996-03-11 2001-03-12 アムコー テクノロジー コリア インコーポレーティド バンプチップスケール半導体パッケージのバンプ形成方法
US5880530A (en) * 1996-03-29 1999-03-09 Intel Corporation Multiregion solder interconnection structure
US5704116A (en) * 1996-05-03 1998-01-06 Motorola, Inc. Method of holding a component using an anhydride fluxing agent
JP2891184B2 (ja) * 1996-06-13 1999-05-17 日本電気株式会社 半導体装置及びその製造方法
US6323549B1 (en) * 1996-08-29 2001-11-27 L. Pierre deRochemont Ceramic composite wiring structures for semiconductor devices and method of manufacture
US5933752A (en) * 1996-11-28 1999-08-03 Sony Corporation Method and apparatus for forming solder bumps for a semiconductor device
US5866442A (en) 1997-01-28 1999-02-02 Micron Technology, Inc. Method and apparatus for filling a gap between spaced layers of a semiconductor
US5887343A (en) * 1997-05-16 1999-03-30 Harris Corporation Direct chip attachment method
DE1025587T1 (de) 1997-07-21 2001-02-08 Aguila Technologies Inc Halbleiter-flipchippackung und herstellungsverfahren dafür
JP3663938B2 (ja) * 1997-10-24 2005-06-22 セイコーエプソン株式会社 フリップチップ実装方法
US5998103A (en) * 1998-04-06 1999-12-07 Chartered Semiconductor Manufacturing, Ltd. Adhesion promotion method employing glycol ether acetate as adhesion promoter material
US6140707A (en) * 1998-05-07 2000-10-31 3M Innovative Properties Co. Laminated integrated circuit package
US6168972B1 (en) 1998-12-22 2001-01-02 Fujitsu Limited Flip chip pre-assembly underfill process
JP2001085470A (ja) * 1999-09-16 2001-03-30 Fujitsu Ltd 半導体装置及びその製造方法
US7547579B1 (en) 2000-04-06 2009-06-16 Micron Technology, Inc. Underfill process
US6341842B1 (en) 2000-05-03 2002-01-29 Lexmark International, Inc. Surface modified nozzle plate
US6869831B2 (en) * 2001-09-14 2005-03-22 Texas Instruments Incorporated Adhesion by plasma conditioning of semiconductor chip surfaces
US6586843B2 (en) * 2001-11-08 2003-07-01 Intel Corporation Integrated circuit device with covalently bonded connection structure
GB0223327D0 (en) * 2002-10-08 2002-11-13 Ranier Ltd Artificial spinal disc
US20040217006A1 (en) * 2003-03-18 2004-11-04 Small Robert J. Residue removers for electrohydrodynamic cleaning of semiconductors
US20050028361A1 (en) * 2003-08-07 2005-02-10 Indium Corporation Of America Integrated underfill process for bumped chip assembly
US7259468B2 (en) * 2004-04-30 2007-08-21 Advanced Chip Engineering Technology Inc. Structure of package
US6956165B1 (en) * 2004-06-28 2005-10-18 Altera Corporation Underfill for maximum flip chip package reliability
TWI254428B (en) 2004-11-24 2006-05-01 Advanced Chip Eng Tech Inc FCBGA package structure
US20080169574A1 (en) * 2007-01-12 2008-07-17 Nokia Corporation Direct Die Attachment
JP4765947B2 (ja) * 2007-01-25 2011-09-07 カシオ計算機株式会社 半導体装置およびその製造方法
US8749065B2 (en) * 2007-01-25 2014-06-10 Tera Probe, Inc. Semiconductor device comprising electromigration prevention film and manufacturing method thereof
WO2010138155A2 (en) * 2009-05-27 2010-12-02 Active Precision, Inc. Encoder interpolator with enhanced precision
US20120168943A1 (en) * 2010-12-30 2012-07-05 Stmicroelectronics Pte. Ltd. Plasma treatment on semiconductor wafers
US8912653B2 (en) 2010-12-30 2014-12-16 Stmicroelectronics Pte Ltd. Plasma treatment on semiconductor wafers
JP2014515560A (ja) * 2011-06-01 2014-06-30 コーニンクレッカ フィリップス エヌ ヴェ 支持基板に接合された発光デバイス
US20140252073A1 (en) * 2013-03-05 2014-09-11 Summit Imaging, Inc. Ball grid array mounting system and method
US9799593B1 (en) * 2016-04-01 2017-10-24 Intel Corporation Semiconductor package substrate having an interfacial layer
KR102452631B1 (ko) * 2017-04-18 2022-10-11 하나 마이크론(주) 정전기 및 충격 보호 구조를 갖는 반도체 패키지
CN115719634B (zh) * 2022-11-22 2023-09-29 深圳市汇健智慧医疗有限公司 一种复合手术室的能源能效规划管理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers
US4276186A (en) * 1979-06-26 1981-06-30 International Business Machines Corporation Cleaning composition and use thereof
US4775449A (en) * 1986-12-29 1988-10-04 General Electric Company Treatment of a polyimide surface to improve the adhesion of metal deposited thereon
US5326643A (en) * 1991-10-07 1994-07-05 International Business Machines Corporation Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier

Also Published As

Publication number Publication date
EP0676803A3 (en) 1998-05-13
EP0676803A2 (en) 1995-10-11
JPH07283244A (ja) 1995-10-27
CN1121090A (zh) 1996-04-24
US5442240A (en) 1995-08-15
US5391397A (en) 1995-02-21
CN1059913C (zh) 2000-12-27
KR100341945B1 (ko) 2002-11-23

Similar Documents

Publication Publication Date Title
KR950032387A (ko) 공유결합의 형성에의한 폴리이미드 표면에 대한 접착 방법
EP1069167A3 (en) Coating composition
DE69221689T2 (de) Verfahren zum Herstellung von Ableiter-Elektrode Einheiten für dünnerschichten Generatoren, Ableiter-Elektrode Einheiten und daraus hergestellte Generatoren
DK0941078T3 (da) Fremgangsmåde og apparatur til coating af substrater til farmaceutisk anvendelse
MY151050A (en) Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method of producing semiconductor device
KR890008399A (ko) 연속적인 차단 및 실리콘 피복된 값싼 다공질 및 흡착성 종이와 그와 유사한 기질의 인-라인 생성 방법과 그것에 의해 생성된 생성물
JPS594859B2 (ja) 気密封止カバ−ユニット及びその製造法
SE8504295L (sv) Sett att inkapsla pa ett berarband monterade halvledarekomponenter
ATE31049T1 (de) Thermofarbband sowie verfahren zu dessen herstellung.
CA2044425A1 (en) Transducer with acoustic matching member and method of making the transducer
SE8401298L (sv) Sprayforfarande for angformig aminkatalysator
SE7602909L (sv) Adhesionsforband mellan ett substrat av jernmetall och gummi samt forfarande for framstellning av ett sadant forband
CA2242894A1 (en) Method for applying a coating composition containing a high content of acetone
KR970058369A (ko) 전계발광 소자의 칼라필터 합착방법
DE50201239D1 (de) Verfahren zur herstellung von bauelementen für elektronische geräte
CA2385011A1 (en) Structure forming method, apparatus and product
WO2001049900A8 (en) Method for coating with metal and material coated with metal
ATE323556T1 (de) Verfahren und anordnung zur herstellung eines dünnen schichtaufbaus
KR890011492A (ko) El 표시소자의 제조방법
JPS61113242A (ja) 電子部品の封止方法
JPS61113240A (ja) 電子部品の封止方法
JPS553201A (en) Manufacture of energy lock-in type piezoelectric filter
JPS63173092A (ja) 基板搭載チツプ部品の保護方法
ATE108576T1 (de) Verfahren zur verkapselung von elektronischen bauelementen.
JPS61113241A (ja) 電子部品の封止方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130527

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20140528

Year of fee payment: 13

EXPY Expiration of term