KR950017848A - 질화 알루미늄체, 및 유리질 소결제를 사용하여 질화 알루미늄체를 형성시키는 방법 - Google Patents

질화 알루미늄체, 및 유리질 소결제를 사용하여 질화 알루미늄체를 형성시키는 방법 Download PDF

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KR950017848A
KR950017848A KR1019940031651A KR19940031651A KR950017848A KR 950017848 A KR950017848 A KR 950017848A KR 1019940031651 A KR1019940031651 A KR 1019940031651A KR 19940031651 A KR19940031651 A KR 19940031651A KR 950017848 A KR950017848 A KR 950017848A
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aluminum nitride
oxide
weight
amount
present
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KR970009989B1 (ko
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리챠드 던콤비 피터
락스맨 샤인드 서브하시
다카모리 다케시
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윌리암 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

본 발명은 (a) 산화 붕소, 산화 알루미늄 및 산화 칼슘을 (1) 산화붕소 3 내지 25중량%, (2) 산화 알루미늄 10 내지 50중량% 및 (3) 산화 칼슘 40 내지 80중량%의 양을 갖는 포함하는 유리질 고형물 1 내지 5중량% 및 (b) 질화 알루미늄체중의 그나머지량으로서의 질화 알루미늄 분체를 포함하는 질화 알루미늄 비소결체에 관한 것이다.
본 발명은 또한 질화 알루미늄 비소결체를 형성시킨 다음, 1550 내지 1650℃의 온도에서 소결시킴으로써 조밀하고 열전도도를 갖는 질화 알루미늄체를 형성시키는 방법에 관한 것이다.

Description

질화 알루미늄체 및 유리질 소결제를 사용하여 질화 알루미늄체를 형성시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (14)

  1. (a) 산화 붕소, 산화 알루미늄 및 산화 칼슘을 (1) 산화 붕소가 3 내지 25 중량%, (2) 산화 알루미늄 10내지 50중량% 및 (3) 산화 칼슘이 40 내지 80중량%의 양으로 포함하는 유리질 고형물 1 내지 5중량% ; 및 (b) 질화 알루미늄체중의 그나머지량으로서의 질화 알루미늄 분체를 포함하는 질화 알루미늄 비소결체.
  2. 제1항에 있어서, 산화 붕소가 유리질 고형물중에 5 내지 20 중량%의 양으로 존재하고, 산화 알루미늄이 유리질 고형물중에 20내지 45중량%의 양으로 존재하고, 산화 칼슘이 유리질 고형물중에 45 내지 65중량%의 양으로 존재하는 질화 알루미늄 비소결체.
  3. 제2항에 있어서, 산화 붕소가 유리질 고형물중에 5 내지 15 중량%의 양으로 존재하고, 산화 알루미늄이 유리질 고형물중에 30내지 40중량%의 양으로 존재하고, 산화 칼슘이 유리질 고형물중에 45 내지 55중량%의 양으로 존재하는 질화 알루미늄 비소결체.
  4. 제3항에 있어서, 유기 결합제 물질을 추가로 포함하는 질화 알루미늄 비소결체.
  5. 제4항에 있어서, 상기 질화 알루미늄체가 그린시이트(greensheet) 물질인 질화 알루미늄 비소결체.
  6. 제5항에 있어서, 다수의 그린시이트가 존재하고, 상기 하나이상의 그린시이트상에 금속 조성물을 추가로 포함하는 질화 알루미늄 비소결체.
  7. 제6항에 있어서, 금속 조성물이 몰리브덴, 텅스텐, 또는 그의 혼합물을 포함하는 질화 알루미늄 비소결체.
  8. (a) (1) 산화 붕소가 3 내지 25 중량%, (2) 산화 알루미늄 10내지 50중량% 및 (3) 산화 칼슘이 40 내지 80중량%의 양을 갖는 산화 붕소, 산화 알루미늄 및 산화 칼슘의 혼합물을 제조하는 단계 ;
    (b) 상기 혼합물을 용융시켜 균질 액체를 형성시키는 단계 ;
    (c) 상기 액체를 급냉시킴으로써 균일한 유리질 고형물을 얻는 단계 ;
    (d) 상기 유리질 고형물을 분쇄하여 소정의 입경을 얻는 단계 ;
    (e) 분쇄된 유리질 고형물을 질화 알루미늄 분체에 (1) 분쇄된 유리질 고형물 1 내지 5중량% 및 (2) 그나머지량의 질화 알루미늄 분체의 비율로 첨가하는 단계 ; 및
    (f) 분쇄된 유리질 고형물과 질화 알루미늄 분체의 생성혼합물을 조밀화시켜 조밀한 질화 알루미늄체를 형성시키기에 충분한 온도에서 상기 혼합물을 소결시키는 단계를 포함하는, 질화 알루미늄체의 성형방법.
  9. 제8항에 있어서, 상기 소결온도가 1500 내지 1650℃인 방법.
  10. 제8항에 있어서, (e)와 (f)단계사이에 결합제 물질을 분쇄된 유리질 고형물과 질화 알루미늄 분체를 혼합하여 슬러리를 형성시키고, 형성된 슬러리를 그린시이트로 주조하는 단계를 추가로 포함하는 방법.
  11. 제8항에 있어서, (a) 단계에서, 산화 붕소가 5 내지 20 중량%의 양으로 존재하고, 산화 알루미늄이 20내지 45중량%의 양으로 존재하고, 산화 칼슘이 45 내지 65중량%의 양으로 존재하는 방법.
  12. 제11항에 있어서, 산화 붕소가 5 내지 15 중량%의 양으로 존재하고, 산화 알루미늄이 30내지 40중량%의 양으로 존재하고, 산화 칼슘이 45 내지 55중량%의 양으로 존재하는 방법.
  13. 제10항에 있어서, 다수의 그린시이트가 존재하고, 상기 하나이상의 그린시이트상에 금속 조성물을 부착시키는 단계를 추가로 포함하는 방법.
  14. 제13항에 있어서, 금속 조성물이 몰리브덴, 텅스텐, 또는 그의 혼합물을 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940031651A 1993-12-22 1994-11-29 질화 알루미늄체 및 유리질 소결제를 사용하여 질화 알루미늄체를 형성시키는 방법 KR970009989B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/173,293 US5482903A (en) 1993-12-22 1993-12-22 Aluminum nitride body utilizing a vitreous sintering additive
US8/173,293 1993-12-22
US08/173,293 1993-12-22

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KR950017848A true KR950017848A (ko) 1995-07-20
KR970009989B1 KR970009989B1 (ko) 1997-06-20

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US (2) US5482903A (ko)
EP (1) EP0659707A1 (ko)
JP (1) JP2977070B2 (ko)
KR (1) KR970009989B1 (ko)

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KR970009989B1 (ko) 1997-06-20
JP2977070B2 (ja) 1999-11-10
US5482903A (en) 1996-01-09
JPH07206525A (ja) 1995-08-08
US5520878A (en) 1996-05-28
EP0659707A1 (en) 1995-06-28

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