KR950007482B1 - 기상성장방법 - Google Patents
기상성장방법 Download PDFInfo
- Publication number
- KR950007482B1 KR950007482B1 KR1019860009998A KR860009998A KR950007482B1 KR 950007482 B1 KR950007482 B1 KR 950007482B1 KR 1019860009998 A KR1019860009998 A KR 1019860009998A KR 860009998 A KR860009998 A KR 860009998A KR 950007482 B1 KR950007482 B1 KR 950007482B1
- Authority
- KR
- South Korea
- Prior art keywords
- growth
- light
- thin film
- intensity
- vapor phase
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000007740 vapor deposition Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 23
- 238000001947 vapour-phase growth Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- 239000012071 phase Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- VJHCJDRQFCCTHL-UHFFFAOYSA-N acetic acid 2,3,4,5,6-pentahydroxyhexanal Chemical compound CC(O)=O.OCC(O)C(O)C(O)C(O)C=O VJHCJDRQFCCTHL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H01L21/205—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61031100A JPH0722132B2 (ja) | 1986-02-15 | 1986-02-15 | 気相成長方法 |
| JP31100 | 1986-02-15 | ||
| JP86-31100 | 1986-02-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870008377A KR870008377A (ko) | 1987-09-26 |
| KR950007482B1 true KR950007482B1 (ko) | 1995-07-11 |
Family
ID=12321978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019860009998A KR950007482B1 (ko) | 1986-02-15 | 1986-11-26 | 기상성장방법 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0722132B2 (ja) |
| KR (1) | KR950007482B1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0281073U (ja) * | 1988-12-09 | 1990-06-22 | ||
| JPH08139147A (ja) * | 1994-11-07 | 1996-05-31 | Mitsubishi Materials Corp | エピタキシャル膜の成膜速度の測定方法およびそ の装置 |
| JP4410529B2 (ja) * | 2003-10-16 | 2010-02-03 | 三菱電機株式会社 | 膜厚制御方法 |
| JP5184431B2 (ja) * | 2009-04-28 | 2013-04-17 | シャープ株式会社 | Ｍｏｃｖｄ装置 |
| DE112016004604B4 (de) * | 2015-10-08 | 2024-06-06 | Nuflare Technology, Inc. | Dampfphasenwachstumsraten-Messvorrichtung, Dampfphasenwachstumsvorrichtung, und Wachstumsdetektionsverfahren |
-
1986
- 1986-02-15 JP JP61031100A patent/JPH0722132B2/ja not_active Expired - Lifetime
- 1986-11-26 KR KR1019860009998A patent/KR950007482B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0722132B2 (ja) | 1995-03-08 |
| KR870008377A (ko) | 1987-09-26 |
| JPS62189722A (ja) | 1987-08-19 |
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|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050630 Year of fee payment: 11 |
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| LAPS | Lapse due to unpaid annual fee |