KR940021519A - 극소전자 포토레지스트에 적당한 광학학적으로 생성된 산원 - Google Patents
극소전자 포토레지스트에 적당한 광학학적으로 생성된 산원 Download PDFInfo
- Publication number
- KR940021519A KR940021519A KR1019940002202A KR19940002202A KR940021519A KR 940021519 A KR940021519 A KR 940021519A KR 1019940002202 A KR1019940002202 A KR 1019940002202A KR 19940002202 A KR19940002202 A KR 19940002202A KR 940021519 A KR940021519 A KR 940021519A
- Authority
- KR
- South Korea
- Prior art keywords
- hydrogen
- lower alkyl
- moiety
- compound
- ester
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 6
- 239000002253 acid Substances 0.000 title claims abstract 3
- 238000004377 microelectronic Methods 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract 13
- 239000001257 hydrogen Substances 0.000 claims abstract 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract 9
- 150000001875 compounds Chemical class 0.000 claims abstract 8
- 239000000203 mixture Substances 0.000 claims abstract 7
- 229920000642 polymer Polymers 0.000 claims abstract 5
- 150000002431 hydrogen Chemical group 0.000 claims abstract 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract 3
- 230000008092 positive effect Effects 0.000 claims abstract 2
- 230000005855 radiation Effects 0.000 claims abstract 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 150000002148 esters Chemical class 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- -1 sulfonyl ester Chemical class 0.000 claims 3
- 229920003176 water-insoluble polymer Polymers 0.000 claims 3
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims 2
- BEVCCTWDTKAVFR-UHFFFAOYSA-N 2-diazonio-4-oxo-3h-naphthalen-1-olate;sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O.C1=CC=C2C(=O)C(=[N+]=[N-])CC(=O)C2=C1 BEVCCTWDTKAVFR-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000003125 aqueous solvent Substances 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 239000002516 radical scavenger Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 2
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 125000002843 carboxylic acid group Chemical group 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 abstract 1
- 150000005691 triesters Chemical class 0.000 description 2
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/71—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/026,923 US5308744A (en) | 1993-03-05 | 1993-03-05 | Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives |
| US08/026,923 | 1993-03-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR940021519A true KR940021519A (ko) | 1994-10-19 |
Family
ID=21834576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940002202A Ceased KR940021519A (ko) | 1993-03-05 | 1994-02-07 | 극소전자 포토레지스트에 적당한 광학학적으로 생성된 산원 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5308744A (https=) |
| EP (1) | EP0614120B1 (https=) |
| JP (2) | JP2622231B2 (https=) |
| KR (1) | KR940021519A (https=) |
| CN (1) | CN1095060A (https=) |
| AT (1) | ATE151895T1 (https=) |
| CA (1) | CA2111632A1 (https=) |
| DE (1) | DE69402592T2 (https=) |
| TW (1) | TW268106B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314782A (en) * | 1993-03-05 | 1994-05-24 | Morton International, Inc. | Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative |
| DE59504286D1 (de) * | 1994-09-12 | 1998-12-24 | Siemens Ag | Photolithographische strukturerzeugung |
| CA2306478A1 (en) | 1997-10-16 | 1999-04-22 | Sun Chemical Corporation | Photoneutralization of ph sensitive aqueous polymeric dispersions and methods for using same |
| JP3285086B2 (ja) | 1999-05-20 | 2002-05-27 | 日本電気株式会社 | 化学増幅型レジスト組成物 |
| CN1318410C (zh) * | 2002-06-28 | 2007-05-30 | 北京师范大学 | 重氮萘醌系光－热活性化合物及其合成方法 |
| US7354692B2 (en) * | 2005-05-09 | 2008-04-08 | International Business Machines Corporation | Photoresists for visible light imaging |
| US9977339B2 (en) | 2014-01-27 | 2018-05-22 | Tokyo Electron Limited | System and method for shifting critical dimensions of patterned films |
| US9645495B2 (en) * | 2014-08-13 | 2017-05-09 | Tokyo Electron Limited | Critical dimension control in photo-sensitized chemically-amplified resist |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3046121A (en) * | 1949-07-23 | 1962-07-24 | Azoplate Corp | Process for the manufacture of printing plates and light-sensitive material suttablefor use therein |
| NL95407C (https=) * | 1954-08-20 | |||
| JPS5562444A (en) * | 1978-11-02 | 1980-05-10 | Konishiroku Photo Ind Co Ltd | Photosensitive composition |
| DE3038605A1 (de) * | 1980-10-13 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Verfahren zur herstellung von reliefkopien |
| DE3144499A1 (de) * | 1981-11-09 | 1983-05-19 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial |
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0155231B2 (de) * | 1984-03-07 | 1997-01-15 | Ciba-Geigy Ag | Verfahren zur Herstellung von Abbildungen |
| EP0239423B1 (en) * | 1986-03-28 | 1996-03-20 | Japan Synthetic Rubber Co., Ltd. | Positive type radiation-sensitive resin composition |
| US4837121A (en) * | 1987-11-23 | 1989-06-06 | Olin Hunt Specialty Products Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin |
| JP2623309B2 (ja) * | 1988-02-22 | 1997-06-25 | ユーシービー ソシエテ アノニム | レジストパターンを得る方法 |
-
1993
- 1993-03-05 US US08/026,923 patent/US5308744A/en not_active Expired - Fee Related
- 1993-12-16 CA CA002111632A patent/CA2111632A1/en not_active Abandoned
- 1993-12-17 TW TW082110734A patent/TW268106B/zh active
-
1994
- 1994-01-06 DE DE69402592T patent/DE69402592T2/de not_active Expired - Fee Related
- 1994-01-06 AT AT94300058T patent/ATE151895T1/de active
- 1994-01-06 EP EP94300058A patent/EP0614120B1/en not_active Expired - Lifetime
- 1994-01-20 JP JP448294A patent/JP2622231B2/ja not_active Expired - Lifetime
- 1994-02-07 KR KR1019940002202A patent/KR940021519A/ko not_active Ceased
- 1994-03-04 CN CN94102680A patent/CN1095060A/zh active Pending
-
1996
- 1996-10-02 JP JP8261806A patent/JPH09120158A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0614120B1 (en) | 1997-04-16 |
| EP0614120A1 (en) | 1994-09-07 |
| JP2622231B2 (ja) | 1997-06-18 |
| JPH09120158A (ja) | 1997-05-06 |
| JPH06256292A (ja) | 1994-09-13 |
| CN1095060A (zh) | 1994-11-16 |
| US5308744A (en) | 1994-05-03 |
| DE69402592T2 (de) | 1997-07-24 |
| TW268106B (https=) | 1996-01-11 |
| ATE151895T1 (de) | 1997-05-15 |
| CA2111632A1 (en) | 1994-09-06 |
| DE69402592D1 (de) | 1997-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19940207 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19940207 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19970822 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 19971216 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19970822 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |