DE69402592T2 - Photochemischer Säurebildner für mikroelektronische Photoresists - Google Patents

Photochemischer Säurebildner für mikroelektronische Photoresists

Info

Publication number
DE69402592T2
DE69402592T2 DE69402592T DE69402592T DE69402592T2 DE 69402592 T2 DE69402592 T2 DE 69402592T2 DE 69402592 T DE69402592 T DE 69402592T DE 69402592 T DE69402592 T DE 69402592T DE 69402592 T2 DE69402592 T2 DE 69402592T2
Authority
DE
Germany
Prior art keywords
diazonaphthoquinone
ch2os
ester according
alkyl
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69402592T
Other languages
German (de)
English (en)
Other versions
DE69402592D1 (de
Inventor
Thomas A Koes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Morton International LLC
Original Assignee
Morton International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Morton International LLC filed Critical Morton International LLC
Application granted granted Critical
Publication of DE69402592D1 publication Critical patent/DE69402592D1/de
Publication of DE69402592T2 publication Critical patent/DE69402592T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63Esters of sulfonic acids
    • C07C309/71Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69402592T 1993-03-05 1994-01-06 Photochemischer Säurebildner für mikroelektronische Photoresists Expired - Fee Related DE69402592T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/026,923 US5308744A (en) 1993-03-05 1993-03-05 Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives

Publications (2)

Publication Number Publication Date
DE69402592D1 DE69402592D1 (de) 1997-05-22
DE69402592T2 true DE69402592T2 (de) 1997-07-24

Family

ID=21834576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402592T Expired - Fee Related DE69402592T2 (de) 1993-03-05 1994-01-06 Photochemischer Säurebildner für mikroelektronische Photoresists

Country Status (9)

Country Link
US (1) US5308744A (https=)
EP (1) EP0614120B1 (https=)
JP (2) JP2622231B2 (https=)
KR (1) KR940021519A (https=)
CN (1) CN1095060A (https=)
AT (1) ATE151895T1 (https=)
CA (1) CA2111632A1 (https=)
DE (1) DE69402592T2 (https=)
TW (1) TW268106B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
DE59504286D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
CA2306478A1 (en) 1997-10-16 1999-04-22 Sun Chemical Corporation Photoneutralization of ph sensitive aqueous polymeric dispersions and methods for using same
JP3285086B2 (ja) 1999-05-20 2002-05-27 日本電気株式会社 化学増幅型レジスト組成物
CN1318410C (zh) * 2002-06-28 2007-05-30 北京师范大学 重氮萘醌系光-热活性化合物及其合成方法
US7354692B2 (en) * 2005-05-09 2008-04-08 International Business Machines Corporation Photoresists for visible light imaging
US9977339B2 (en) 2014-01-27 2018-05-22 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
US9645495B2 (en) * 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3046121A (en) * 1949-07-23 1962-07-24 Azoplate Corp Process for the manufacture of printing plates and light-sensitive material suttablefor use therein
NL95407C (https=) * 1954-08-20
JPS5562444A (en) * 1978-11-02 1980-05-10 Konishiroku Photo Ind Co Ltd Photosensitive composition
DE3038605A1 (de) * 1980-10-13 1982-06-03 Hoechst Ag, 6000 Frankfurt Verfahren zur herstellung von reliefkopien
DE3144499A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0155231B2 (de) * 1984-03-07 1997-01-15 Ciba-Geigy Ag Verfahren zur Herstellung von Abbildungen
EP0239423B1 (en) * 1986-03-28 1996-03-20 Japan Synthetic Rubber Co., Ltd. Positive type radiation-sensitive resin composition
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
JP2623309B2 (ja) * 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム レジストパターンを得る方法

Also Published As

Publication number Publication date
EP0614120B1 (en) 1997-04-16
EP0614120A1 (en) 1994-09-07
JP2622231B2 (ja) 1997-06-18
JPH09120158A (ja) 1997-05-06
JPH06256292A (ja) 1994-09-13
CN1095060A (zh) 1994-11-16
US5308744A (en) 1994-05-03
KR940021519A (ko) 1994-10-19
TW268106B (https=) 1996-01-11
ATE151895T1 (de) 1997-05-15
CA2111632A1 (en) 1994-09-06
DE69402592D1 (de) 1997-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee