DE69131150T2 - Resist-Materialien - Google Patents

Resist-Materialien

Info

Publication number
DE69131150T2
DE69131150T2 DE69131150T DE69131150T DE69131150T2 DE 69131150 T2 DE69131150 T2 DE 69131150T2 DE 69131150 T DE69131150 T DE 69131150T DE 69131150 T DE69131150 T DE 69131150T DE 69131150 T2 DE69131150 T2 DE 69131150T2
Authority
DE
Germany
Prior art keywords
resist materials
resist
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131150T
Other languages
English (en)
Other versions
DE69131150D1 (de
Inventor
Anthony Edward Novembre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69131150D1 publication Critical patent/DE69131150D1/de
Publication of DE69131150T2 publication Critical patent/DE69131150T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69131150T 1990-07-31 1991-07-22 Resist-Materialien Expired - Fee Related DE69131150T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/560,517 US5066566A (en) 1990-07-31 1990-07-31 Resist materials

Publications (2)

Publication Number Publication Date
DE69131150D1 DE69131150D1 (de) 1999-05-27
DE69131150T2 true DE69131150T2 (de) 1999-12-09

Family

ID=24238131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131150T Expired - Fee Related DE69131150T2 (de) 1990-07-31 1991-07-22 Resist-Materialien

Country Status (4)

Country Link
US (1) US5066566A (de)
EP (1) EP0472290B1 (de)
JP (1) JPH04251850A (de)
DE (1) DE69131150T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio
TW211080B (de) * 1991-12-12 1993-08-11 American Telephone & Telegraph
DE69406687T2 (de) * 1993-01-25 1998-05-14 At & T Corp Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt
US5656412A (en) * 1995-03-07 1997-08-12 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3382081B2 (ja) * 1995-06-01 2003-03-04 株式会社東芝 レジストおよびこれを用いたパターン形成方法
US5928840A (en) * 1995-11-10 1999-07-27 Matsushita Electric Industrial Co., Ltd. Patterning material and patterning method
US5998099A (en) * 1996-03-08 1999-12-07 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6537736B1 (en) 1999-03-12 2003-03-25 Matsushita Electric Industrial Co., Ltd. Patten formation method
JP3848070B2 (ja) * 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
US6673514B2 (en) 2001-09-07 2004-01-06 Kodak Polychrome Graphics Llc Imagable articles and compositions, and their use
US7060416B2 (en) * 2004-04-08 2006-06-13 Eastman Kodak Company Positive-working, thermally sensitive imageable element
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
KR100852540B1 (ko) * 2004-06-30 2008-08-18 인텔 코포레이션 에너지 수확 분자 및 포토레지스트 기술
US7235344B2 (en) * 2004-06-30 2007-06-26 Intel Corporation Energy harvesting molecules and photoresist technology
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
KR101647158B1 (ko) * 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS60254130A (ja) * 1984-05-31 1985-12-14 Fujitsu Ltd パタ−ン形成方法
JPS61287928A (ja) * 1985-06-15 1986-12-18 Denki Kagaku Kogyo Kk 二酸化硫黄とフエニルアセチレンの共重合体及びその製造方法
JP2607870B2 (ja) * 1985-07-26 1997-05-07 富士写真フイルム株式会社 画像形成方法
JPS62215628A (ja) * 1986-03-10 1987-09-22 Chisso Corp 二酸化硫黄と核置換トリアルキルシリルスチレンとの共重合体及びその製造方法
JPH0629323B2 (ja) * 1986-06-18 1994-04-20 チッソ株式会社 二酸化硫黄とビニル化合物から成る多元共重合体
JPH0611791B2 (ja) * 1986-06-20 1994-02-16 チッソ株式会社 二酸化硫黄、アセチレン化合物およびビニル化合物の共重合体
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
JP2540199B2 (ja) * 1988-02-25 1996-10-02 アメリカン テレフォン アンド テレグラフ カムパニー デバイスの製造方法
JPH02103545A (ja) * 1988-10-13 1990-04-16 Fujitsu Ltd ポジ型レジスト材料およびパターン形成方法
JPH02251962A (ja) * 1989-03-27 1990-10-09 Matsushita Electric Ind Co Ltd 微細パターン形成材料およびパターン形成方法

Also Published As

Publication number Publication date
US5066566A (en) 1991-11-19
EP0472290B1 (de) 1999-04-21
EP0472290A1 (de) 1992-02-26
DE69131150D1 (de) 1999-05-27
JPH04251850A (ja) 1992-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee