DE69131150D1 - Resist-Materialien - Google Patents
Resist-MaterialienInfo
- Publication number
- DE69131150D1 DE69131150D1 DE69131150T DE69131150T DE69131150D1 DE 69131150 D1 DE69131150 D1 DE 69131150D1 DE 69131150 T DE69131150 T DE 69131150T DE 69131150 T DE69131150 T DE 69131150T DE 69131150 D1 DE69131150 D1 DE 69131150D1
- Authority
- DE
- Germany
- Prior art keywords
- resist materials
- resist
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/560,517 US5066566A (en) | 1990-07-31 | 1990-07-31 | Resist materials |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69131150D1 true DE69131150D1 (de) | 1999-05-27 |
DE69131150T2 DE69131150T2 (de) | 1999-12-09 |
Family
ID=24238131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69131150T Expired - Fee Related DE69131150T2 (de) | 1990-07-31 | 1991-07-22 | Resist-Materialien |
Country Status (4)
Country | Link |
---|---|
US (1) | US5066566A (de) |
EP (1) | EP0472290B1 (de) |
JP (1) | JPH04251850A (de) |
DE (1) | DE69131150T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5298367A (en) * | 1991-03-09 | 1994-03-29 | Basf Aktiengesellschaft | Production of micromoldings having a high aspect ratio |
TW211080B (de) * | 1991-12-12 | 1993-08-11 | American Telephone & Telegraph | |
EP0608983B1 (de) * | 1993-01-25 | 1997-11-12 | AT&T Corp. | Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt |
US5656412A (en) * | 1995-03-07 | 1997-08-12 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3382081B2 (ja) * | 1995-06-01 | 2003-03-04 | 株式会社東芝 | レジストおよびこれを用いたパターン形成方法 |
US5928840A (en) * | 1995-11-10 | 1999-07-27 | Matsushita Electric Industrial Co., Ltd. | Patterning material and patterning method |
US5998099A (en) * | 1996-03-08 | 1999-12-07 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US6537736B1 (en) | 1999-03-12 | 2003-03-25 | Matsushita Electric Industrial Co., Ltd. | Patten formation method |
JP3848070B2 (ja) * | 2000-09-27 | 2006-11-22 | 株式会社東芝 | パターン形成方法 |
US6673514B2 (en) | 2001-09-07 | 2004-01-06 | Kodak Polychrome Graphics Llc | Imagable articles and compositions, and their use |
US7060416B2 (en) * | 2004-04-08 | 2006-06-13 | Eastman Kodak Company | Positive-working, thermally sensitive imageable element |
US20050255410A1 (en) | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
KR100852540B1 (ko) * | 2004-06-30 | 2008-08-18 | 인텔 코포레이션 | 에너지 수확 분자 및 포토레지스트 기술 |
US7235344B2 (en) * | 2004-06-30 | 2007-06-26 | Intel Corporation | Energy harvesting molecules and photoresist technology |
US7914974B2 (en) | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
EP2245512B1 (de) * | 2008-01-29 | 2019-09-11 | Brewer Science, Inc. | On-track-prozess zur strukturierung einer hardmaske durch mehrere dunkelfeldbelichtungen |
US9640396B2 (en) * | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS60254130A (ja) * | 1984-05-31 | 1985-12-14 | Fujitsu Ltd | パタ−ン形成方法 |
JPS61287928A (ja) * | 1985-06-15 | 1986-12-18 | Denki Kagaku Kogyo Kk | 二酸化硫黄とフエニルアセチレンの共重合体及びその製造方法 |
JP2607870B2 (ja) * | 1985-07-26 | 1997-05-07 | 富士写真フイルム株式会社 | 画像形成方法 |
JPS62215628A (ja) * | 1986-03-10 | 1987-09-22 | Chisso Corp | 二酸化硫黄と核置換トリアルキルシリルスチレンとの共重合体及びその製造方法 |
JPH0629323B2 (ja) * | 1986-06-18 | 1994-04-20 | チッソ株式会社 | 二酸化硫黄とビニル化合物から成る多元共重合体 |
JPH0611791B2 (ja) * | 1986-06-20 | 1994-02-16 | チッソ株式会社 | 二酸化硫黄、アセチレン化合物およびビニル化合物の共重合体 |
DE3721741A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
JP2540199B2 (ja) * | 1988-02-25 | 1996-10-02 | アメリカン テレフォン アンド テレグラフ カムパニー | デバイスの製造方法 |
JPH02103545A (ja) * | 1988-10-13 | 1990-04-16 | Fujitsu Ltd | ポジ型レジスト材料およびパターン形成方法 |
JPH02251962A (ja) * | 1989-03-27 | 1990-10-09 | Matsushita Electric Ind Co Ltd | 微細パターン形成材料およびパターン形成方法 |
-
1990
- 1990-07-31 US US07/560,517 patent/US5066566A/en not_active Expired - Lifetime
-
1991
- 1991-07-22 DE DE69131150T patent/DE69131150T2/de not_active Expired - Fee Related
- 1991-07-22 EP EP91306655A patent/EP0472290B1/de not_active Expired - Lifetime
- 1991-07-30 JP JP3211328A patent/JPH04251850A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5066566A (en) | 1991-11-19 |
EP0472290B1 (de) | 1999-04-21 |
DE69131150T2 (de) | 1999-12-09 |
EP0472290A1 (de) | 1992-02-26 |
JPH04251850A (ja) | 1992-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |