TW268106B - - Google Patents
Info
- Publication number
- TW268106B TW268106B TW082110734A TW82110734A TW268106B TW 268106 B TW268106 B TW 268106B TW 082110734 A TW082110734 A TW 082110734A TW 82110734 A TW82110734 A TW 82110734A TW 268106 B TW268106 B TW 268106B
- Authority
- TW
- Taiwan
- Prior art keywords
- ch2os
- pref
- diazonaphthoquinone
- lower alkyl
- compsn
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/71—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/026,923 US5308744A (en) | 1993-03-05 | 1993-03-05 | Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives |
Publications (1)
Publication Number | Publication Date |
---|---|
TW268106B true TW268106B (zh) | 1996-01-11 |
Family
ID=21834576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW082110734A TW268106B (zh) | 1993-03-05 | 1993-12-17 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5308744A (zh) |
EP (1) | EP0614120B1 (zh) |
JP (2) | JP2622231B2 (zh) |
KR (1) | KR940021519A (zh) |
CN (1) | CN1095060A (zh) |
AT (1) | ATE151895T1 (zh) |
CA (1) | CA2111632A1 (zh) |
DE (1) | DE69402592T2 (zh) |
TW (1) | TW268106B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5314782A (en) * | 1993-03-05 | 1994-05-24 | Morton International, Inc. | Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative |
JP3512191B2 (ja) * | 1994-09-12 | 2004-03-29 | シーメンス アクチエンゲゼルシヤフト | フォトリソグラフィパターン製造方法 |
EP1023360B1 (en) | 1997-10-16 | 2011-03-09 | Sun Chemical Corporation | PHOTONEUTRALIZATION OF pH SENSITIVE AQUEOUS POLYMERIC DISPERSIONS AND METHODS FOR USING SAME |
JP3285086B2 (ja) | 1999-05-20 | 2002-05-27 | 日本電気株式会社 | 化学増幅型レジスト組成物 |
CN1318410C (zh) * | 2002-06-28 | 2007-05-30 | 北京师范大学 | 重氮萘醌系光-热活性化合物及其合成方法 |
US7354692B2 (en) * | 2005-05-09 | 2008-04-08 | International Business Machines Corporation | Photoresists for visible light imaging |
KR101888287B1 (ko) | 2014-01-27 | 2018-08-13 | 도쿄엘렉트론가부시키가이샤 | 패터닝된 필름의 임계 치수를 시프팅하기 위한 시스템 및 방법 |
WO2016025210A1 (en) * | 2014-08-13 | 2016-02-18 | Tokyo Electron Limited | Critical dimension control in photo-sensitized chemically-amplified resist |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3046121A (en) * | 1949-07-23 | 1962-07-24 | Azoplate Corp | Process for the manufacture of printing plates and light-sensitive material suttablefor use therein |
NL95407C (zh) * | 1954-08-20 | |||
JPS5562444A (en) * | 1978-11-02 | 1980-05-10 | Konishiroku Photo Ind Co Ltd | Photosensitive composition |
DE3038605A1 (de) * | 1980-10-13 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Verfahren zur herstellung von reliefkopien |
DE3144499A1 (de) * | 1981-11-09 | 1983-05-19 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
EP0155231B2 (de) * | 1984-03-07 | 1997-01-15 | Ciba-Geigy Ag | Verfahren zur Herstellung von Abbildungen |
EP0239423B1 (en) * | 1986-03-28 | 1996-03-20 | Japan Synthetic Rubber Co., Ltd. | Positive type radiation-sensitive resin composition |
US4837121A (en) * | 1987-11-23 | 1989-06-06 | Olin Hunt Specialty Products Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin |
JP2623309B2 (ja) * | 1988-02-22 | 1997-06-25 | ユーシービー ソシエテ アノニム | レジストパターンを得る方法 |
-
1993
- 1993-03-05 US US08/026,923 patent/US5308744A/en not_active Expired - Fee Related
- 1993-12-16 CA CA002111632A patent/CA2111632A1/en not_active Abandoned
- 1993-12-17 TW TW082110734A patent/TW268106B/zh active
-
1994
- 1994-01-06 EP EP94300058A patent/EP0614120B1/en not_active Expired - Lifetime
- 1994-01-06 DE DE69402592T patent/DE69402592T2/de not_active Expired - Fee Related
- 1994-01-06 AT AT94300058T patent/ATE151895T1/de active
- 1994-01-20 JP JP448294A patent/JP2622231B2/ja not_active Expired - Lifetime
- 1994-02-07 KR KR1019940002202A patent/KR940021519A/ko not_active Application Discontinuation
- 1994-03-04 CN CN94102680A patent/CN1095060A/zh active Pending
-
1996
- 1996-10-02 JP JP8261806A patent/JPH09120158A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1095060A (zh) | 1994-11-16 |
KR940021519A (ko) | 1994-10-19 |
EP0614120B1 (en) | 1997-04-16 |
CA2111632A1 (en) | 1994-09-06 |
ATE151895T1 (de) | 1997-05-15 |
JPH09120158A (ja) | 1997-05-06 |
EP0614120A1 (en) | 1994-09-07 |
DE69402592T2 (de) | 1997-07-24 |
JPH06256292A (ja) | 1994-09-13 |
JP2622231B2 (ja) | 1997-06-18 |
DE69402592D1 (de) | 1997-05-22 |
US5308744A (en) | 1994-05-03 |
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