KR940016547A - 종형 열처리장치 - Google Patents
종형 열처리장치 Download PDFInfo
- Publication number
- KR940016547A KR940016547A KR1019930028968A KR930028968A KR940016547A KR 940016547 A KR940016547 A KR 940016547A KR 1019930028968 A KR1019930028968 A KR 1019930028968A KR 930028968 A KR930028968 A KR 930028968A KR 940016547 A KR940016547 A KR 940016547A
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- treatment apparatus
- vertical heat
- exchange medium
- heat exchange
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 14
- 239000002826 coolant Substances 0.000 claims abstract 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000011553 magnetic fluid Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/907—Passageway in rod or shaft
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/91—O-ring seal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/93—Seal including heating or cooling feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
피처리체를 수용하는 처리용기의 마개체에, 자석 유체시일을 구비한 회전도입기를 설치하고, 이 회전도입기의 회전축내에 냉각매체를 순환시킬수가 있도록, 구성됨과 동시에 피처리체가 수용된 열처리용 보트(웨이퍼 보트)를 유지하는 보온통을 이 회전축에서 지지한다.
이것에 의하여, 반도체 웨이퍼를 가열한 열이 열처리용 보트를 통하여 회전기구를 쬐여 회전축이 고온으로 되는 것을 방지한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 종형 열처리장치의 종단면도.
Claims (8)
- 피처리체를 수용하는 처리용기를 밀봉하는 승강이 자유로운 마개체와, 그 마개체에 설치된 회전축과, 그 자석유체 시일부재로 되는 회전도입기와, 그 회전도입기의 상기 회전축내에 열 교환매체를 순환시키는 수단과, 상기 회전축에 의하여 지지된 열처리용 보트로 이루어지는 종형 열처리장치.
- 제 1 항에 있어서, 상기 마개체에 상기 회전축의 관통구멍을 설치하고, 그 관통구멍에 불활성 가스를 공급하는 수단을 설치한 종형 열처리장치.
- 제 1 항에 있어서, 상기 열교환 매체가 냉각 매체인 종형 열처리장치.
- 제 1 항에 있어서, 상기 열교환 매체가 가열 매체인 종형 열처리장치.
- 제 1 항에 있어서, 상기 열교환 매체가 물인 종형 열처리장치.
- 제 1 항에 있어서, 상기 열교환 매체가 에틸렌글리콜인 종형 열처리장치.
- 제 1 항에 있어서, 상기 회전도입기에 온도 센서를 설치하고, 소정온도 이상의 온도가 감지된 때에 상기 열교환 매체를 순환시키는 수단으로부터 공급유량을 증가시키도록 한 종형 열처리장치.
- 제 2 항에 있어서, 상기 마개체의 상면에 관통구멍에 대향하여, 소정의 극간을 유지하여 버플판을 설치한 종형 열처리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP92-358987 | 1992-12-25 | ||
JP4358987A JPH06204157A (ja) | 1992-12-25 | 1992-12-25 | 縦型熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940016547A true KR940016547A (ko) | 1994-07-23 |
KR100250010B1 KR100250010B1 (ko) | 2000-03-15 |
Family
ID=18462154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930028968A KR100250010B1 (ko) | 1992-12-25 | 1993-12-22 | 종형 열처리장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5421892A (ko) |
JP (1) | JPH06204157A (ko) |
KR (1) | KR100250010B1 (ko) |
Families Citing this family (46)
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JP3125199B2 (ja) * | 1993-03-18 | 2001-01-15 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP3073627B2 (ja) * | 1993-06-14 | 2000-08-07 | 東京エレクトロン株式会社 | 熱処理装置 |
KR100224659B1 (ko) * | 1996-05-17 | 1999-10-15 | 윤종용 | 종형 기상 성장 장치용 캡 |
AU5461998A (en) | 1996-11-27 | 1998-06-22 | Emcore Corporation | Chemical vapor deposition apparatus |
NL1005410C2 (nl) | 1997-02-28 | 1998-08-31 | Advanced Semiconductor Mat | Stelsel voor het laden, behandelen en ontladen van op een drager aangebrachte substraten. |
EP1058944A1 (en) * | 1998-02-25 | 2000-12-13 | Applied Materials, Inc. | Cooling system with antifreeze for cooling magnetron for process chamber of processing system |
JPH11354516A (ja) * | 1998-06-08 | 1999-12-24 | Sony Corp | シリコン酸化膜形成装置及びシリコン酸化膜形成方法 |
US6217937B1 (en) | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
JP3579278B2 (ja) * | 1999-01-26 | 2004-10-20 | 東京エレクトロン株式会社 | 縦型熱処理装置及びシール装置 |
US6413081B2 (en) | 1999-09-17 | 2002-07-02 | Pieter Johannes Quintus Van Voorst Vader | Method for purging a furnace and furnace assembly |
US6568899B1 (en) | 1999-11-30 | 2003-05-27 | Wafermasters, Inc. | Wafer processing system including a robot |
US6500266B1 (en) * | 2000-01-18 | 2002-12-31 | Applied Materials, Inc. | Heater temperature uniformity qualification tool |
KR100360401B1 (ko) * | 2000-03-17 | 2002-11-13 | 삼성전자 주식회사 | 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치 |
EP1338028A1 (en) * | 2000-12-01 | 2003-08-27 | Wafermasters, Incorporated | Wafer processing system including a robot |
US6689221B2 (en) * | 2000-12-04 | 2004-02-10 | Applied Materials, Inc. | Cooling gas delivery system for a rotatable semiconductor substrate support assembly |
KR100442478B1 (ko) * | 2001-02-15 | 2004-07-30 | 도쿄 일렉트론 가부시키가이샤 | 로봇을 포함하는 웨이퍼 처리시스템 |
FI116803B (fi) * | 2001-04-27 | 2006-02-28 | Crane John Safematic Oy | Sovitelma mekaanisen tiivisteen yhteydessä |
JP3369165B1 (ja) * | 2002-04-09 | 2003-01-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US6932351B1 (en) * | 2003-02-07 | 2005-08-23 | William L. Mowll | Packing case for cooling compressors and other machinery |
US6879779B2 (en) * | 2003-04-30 | 2005-04-12 | Despatch Industries Limited Partnership | Annealing oven with heat transfer plate |
KR100973666B1 (ko) * | 2003-06-17 | 2010-08-03 | 주성엔지니어링(주) | 원자층증착장치의 가스밸브 어셈블리 |
US20060216177A1 (en) * | 2003-07-04 | 2006-09-28 | Warren Leslie J | Liquid pump and method for pumping a liquid that may have gas coming out of solution |
US7338049B2 (en) * | 2004-08-26 | 2008-03-04 | Ferrotec (Usa) Corporation | Self-cooling ferrfluid seal |
US7290561B2 (en) * | 2004-12-16 | 2007-11-06 | Diversified Dynamics Corporation | Pulsation causing valve for a plural piston pump |
US7278443B2 (en) * | 2004-12-16 | 2007-10-09 | Diversified Dynamics Corporation | Pulsation causing valve for a plural piston pump |
JP2006179613A (ja) * | 2004-12-21 | 2006-07-06 | Rigaku Corp | 半導体ウエハ縦型熱処理装置用磁性流体シールユニット |
US20060140778A1 (en) * | 2004-12-28 | 2006-06-29 | Warren Leslie J | Reciprocating positive displacement pump for deionized water and method of cooling and lubricating therefor |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US20060239834A1 (en) * | 2005-04-20 | 2006-10-26 | Larson Steve A | Metered pulse pump |
CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
TW200741125A (en) * | 2006-03-31 | 2007-11-01 | Eagle Ind Co Ltd | Device for sealing magnetic fluid |
JP5336099B2 (ja) * | 2008-03-26 | 2013-11-06 | 光洋サーモシステム株式会社 | 縦型熱処理装置及び熱処理方法 |
US20100230901A1 (en) * | 2009-03-12 | 2010-09-16 | Ferrotec (Uk), Ltd. | Magnetic fluid rotary feedthrough with sensing and communication capability |
KR101007994B1 (ko) * | 2010-03-24 | 2011-01-14 | 박광준 | 잉곳 그로워 |
US8531195B2 (en) | 2010-08-26 | 2013-09-10 | Ferrotec (Usa) Corporation | Failure indicator seal for a rotary feedthrough |
KR101689690B1 (ko) * | 2010-10-08 | 2016-12-26 | 주성엔지니어링(주) | 가스 분사 장치 |
US20130153201A1 (en) * | 2010-12-30 | 2013-06-20 | Poole Ventura, Inc. | Thermal diffusion chamber with cooling tubes |
JP2012195565A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
US9279185B2 (en) * | 2012-06-14 | 2016-03-08 | Asm Technology Singapore Pte Ltd | Feed-through apparatus for a chemical vapour deposition device |
JP5933399B2 (ja) | 2012-09-07 | 2016-06-08 | 東京エレクトロン株式会社 | 熱処理装置 |
US10490431B2 (en) * | 2017-03-10 | 2019-11-26 | Yield Engineering Systems, Inc. | Combination vacuum and over-pressure process chamber and methods related thereto |
US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
US11788541B2 (en) * | 2020-05-18 | 2023-10-17 | Dover Pumps & Process Solutions Segment, Inc. | High pressure gas sealing |
KR102378581B1 (ko) * | 2020-06-19 | 2022-03-24 | 씰링크 주식회사 | 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치 |
JP2023112571A (ja) * | 2022-02-01 | 2023-08-14 | 東京エレクトロン株式会社 | 基板処理装置 |
CN116613090A (zh) * | 2023-05-18 | 2023-08-18 | 上海稷以科技有限公司 | 温度控制系统及调节方法 |
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US3990555A (en) * | 1975-03-25 | 1976-11-09 | The Torrington Company | Unitary assembly of overrunning clutch and bearing |
JPS5516528A (en) * | 1978-07-20 | 1980-02-05 | Mitsubishi Electric Corp | Narrow-band television transmitter |
US4304411A (en) * | 1980-04-17 | 1981-12-08 | Mechanical Technology Incorporated | Magnetic/centrifugal-fluid seal |
US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
US4911812A (en) * | 1987-10-21 | 1990-03-27 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
JPH0387372A (ja) * | 1988-07-22 | 1991-04-12 | Canon Inc | 堆積膜形成方法 |
US5016567A (en) * | 1988-08-26 | 1991-05-21 | Tel Sagami Limited | Apparatus for treatment using gas |
JP3115015B2 (ja) * | 1991-02-19 | 2000-12-04 | 東京エレクトロン株式会社 | 縦型バッチ処理装置 |
US5324540A (en) * | 1992-08-17 | 1994-06-28 | Tokyo Electron Limited | System and method for supporting and rotating substrates in a process chamber |
-
1992
- 1992-12-25 JP JP4358987A patent/JPH06204157A/ja active Pending
-
1993
- 1993-12-21 US US08/170,754 patent/US5421892A/en not_active Expired - Fee Related
- 1993-12-22 KR KR1019930028968A patent/KR100250010B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100250010B1 (ko) | 2000-03-15 |
JPH06204157A (ja) | 1994-07-22 |
US5421892A (en) | 1995-06-06 |
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