KR940011107U - 노광 장치의 칩 확대율 보정 패턴 - Google Patents

노광 장치의 칩 확대율 보정 패턴

Info

Publication number
KR940011107U
KR940011107U KR2019920019967U KR920019967U KR940011107U KR 940011107 U KR940011107 U KR 940011107U KR 2019920019967 U KR2019920019967 U KR 2019920019967U KR 920019967 U KR920019967 U KR 920019967U KR 940011107 U KR940011107 U KR 940011107U
Authority
KR
South Korea
Prior art keywords
exposure apparatus
correction pattern
magnification correction
chip magnification
chip
Prior art date
Application number
KR2019920019967U
Other languages
English (en)
Other versions
KR960001466Y1 (ko
Inventor
금은섭
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR92019967U priority Critical patent/KR960001466Y1/ko
Publication of KR940011107U publication Critical patent/KR940011107U/ko
Application granted granted Critical
Publication of KR960001466Y1 publication Critical patent/KR960001466Y1/ko

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR92019967U 1992-10-16 1992-10-16 노광 장치의 칩 확대율 보정 패턴 KR960001466Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92019967U KR960001466Y1 (ko) 1992-10-16 1992-10-16 노광 장치의 칩 확대율 보정 패턴

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92019967U KR960001466Y1 (ko) 1992-10-16 1992-10-16 노광 장치의 칩 확대율 보정 패턴

Publications (2)

Publication Number Publication Date
KR940011107U true KR940011107U (ko) 1994-05-27
KR960001466Y1 KR960001466Y1 (ko) 1996-02-17

Family

ID=19341951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92019967U KR960001466Y1 (ko) 1992-10-16 1992-10-16 노광 장치의 칩 확대율 보정 패턴

Country Status (1)

Country Link
KR (1) KR960001466Y1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298193B1 (ko) * 1998-06-16 2001-11-15 박종섭 웨이퍼의수평정렬을위한레티클

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298193B1 (ko) * 1998-06-16 2001-11-15 박종섭 웨이퍼의수평정렬을위한레티클

Also Published As

Publication number Publication date
KR960001466Y1 (ko) 1996-02-17

Similar Documents

Publication Publication Date Title
DE69123610D1 (de) Belichtungsverfahren
DE69528917D1 (de) Steuerschaltung eines optischen Halbleitermodulators
KR970003399A (ko) 포토마스크의 패턴 구조
DE69028478D1 (de) Belichtungsmaske
KR970002480A (ko) 투영 노광 장치 및 회로 기판의 노광 방법
KR970002479A (ko) 보조 마스크를 이용한 투영 노광장치
KR940011107U (ko) 노광 장치의 칩 확대율 보정 패턴
DE69515831D1 (de) Belichtungsapparat
EP0461932A3 (en) Apparatus for exposing peripheral portion of substrate
KR960038709U (ko) 웨이퍼 노광장치의 스테이지
KR960002695U (ko) 노광장치의 웨이퍼 스테이지
KR970045362U (ko) 반도체 노광장치
KR960019705U (ko) 상의의 노출방지구
KR940013253U (ko) 노광마스크
KR960015340U (ko) 노광마스크
KR950015159U (ko) 반도체 노광장비의 포커싱 장치
KR950015158U (ko) 반도체 웨이퍼의 노광장치
KR960012338U (ko) 노광장치의 셔터구조
KR970063625U (ko) 패널용 노광장치의 노광렌즈
KR960003067U (ko) 노광장치의 레티클 스테이지
KR970045370U (ko) 웨이퍼의 노광장치
KR960032360U (ko) 웨이퍼 노광장치
KR970025774U (ko) 반도체 장치의 마스크
KR950015642U (ko) 웨이퍼 인자 노광장치
KR960015339U (ko) 웨이퍼 주변 노광장치

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20030120

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee